IXFX32N80P N-Channel 800V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX32N80P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 800V drain-to-source voltage and 32A continuous drain current at 25°C. This device is part of the HiPerFET™ Polar series and is housed in a TO-247-3 through-hole package. The part is currently in active production status with 747 units in stock.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter ranges. The following substitute MOSFETs maintain compatibility with the IXFX32N80P through matching package type, voltage rating, and operational characteristics.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	32	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	270	mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5	V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	150	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	8800	pF @ 25V
Power Dissipation (Max)	830	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3 Variant	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IXFX32N80P are classified based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 800V or higher
Package Type: TO-247-3 through-hole configuration
FET Type: N-Channel metal oxide technology
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance and MSL Level 1 rating

Secondary Compatibility Parameters:

Continuous Drain Current (Id) at 25°C: Minimum 32A or higher
Drive Voltage: 10V gate drive capability
Vgs (Max): ±20V or higher
Mounting: Through-hole configuration

Substitute parts are grouped into two categories:

Category A - Direct Voltage Rating Match (800V): Parts maintaining the exact 800V Vdss rating with equal or superior current handling and power dissipation capabilities.

Category B - Lower Voltage Rating (560V–600V): Parts with reduced Vdss ratings suitable for applications where 800V is not required, offering alternative performance characteristics within reduced voltage specifications.

Parameter Comparison

Parameter	IXFX32N80P	APT38F80B2	SPW17N80C3FKSA1	IRFP27N60KPBF	SPW16N50C3FKSA1
Manufacturer	IXYS	Microchip Technology	Infineon Technologies	Vishay Siliconix	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	800	800	800	600	560
Id @ 25°C (A)	32	41	17	27	16
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ Id, Vgs (mOhm)	270 @ 16A, 10V	240 @ 20A, 10V	290 @ 11A, 10V	220 @ 16A, 10V	280 @ 10A, 10V
Vgs(th) (Max) @ Id (V)	5 @ 8mA	5 @ 2.5mA	3.9 @ 1mA	5 @ 250µA	3.9 @ 675µA
Gate Charge (Qg) (Max) @ 10V (nC)	150	260	177	180	66
Vgs (Max) (V)	±30	±30	±20	±30	±20
Input Capacitance (Ciss) @ 25V (pF)	8800	8070	2320	4660	1600
Power Dissipation (Max) (W)	830	1040	227	500	160
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-247-3 Variant	TO-247-3 Variant	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

APT38F80B2 (Microchip Technology)

The APT38F80B2 is a direct voltage-class substitute for the IXFX32N80P, maintaining the 800V Vdss rating. This part offers superior current handling at 41A continuous drain current and increased power dissipation capability at 1040W, compared to the IXFX32N80P at 32A and 830W. The APT38F80B2 exhibits lower on-state resistance (240 mOhm @ 20A, 10V) and higher gate charge (260 nC @ 10V). Both devices are ROHS3 compliant with MSL Level 1 rating and support identical operating temperature ranges. The APT38F80B2 is suitable for applications requiring higher current capacity within the same voltage specification.

SPW17N80C3FKSA1 (Infineon Technologies)

The SPW17N80C3FKSA1 maintains the 800V Vdss rating and is part of the CoolMOS™ series. This device provides 17A continuous drain current and 227W power dissipation, representing a lower-current alternative to the IXFX32N80P. The SPW17N80C3FKSA1 features lower gate charge (177 nC @ 10V) and significantly reduced input capacitance (2320 pF @ 25V), which may reduce switching losses in certain applications. The maximum gate voltage is ±20V, compared to ±30V for the IXFX32N80P. Both devices are ROHS3 compliant with MSL Level 1 rating and identical operating temperature ranges. This part is suitable for lower-current 800V applications.

IRFP27N60KPBF (Vishay Siliconix)

The IRFP27N60KPBF operates at a reduced voltage rating of 600V Vdss, representing a lower-voltage alternative. This device provides 27A continuous drain current and 500W power dissipation. The IRFP27N60KPBF exhibits lower on-state resistance (220 mOhm @ 16A, 10V) and higher gate charge (180 nC @ 10V) compared to the IXFX32N80P. Both devices support ±30V maximum gate voltage and are ROHS3 compliant with MSL Level 1 rating. This part is applicable only in applications where 600V voltage rating is sufficient.

SPW16N50C3FKSA1 (Infineon Technologies)

The SPW16N50C3FKSA1 operates at a reduced voltage rating of 560V Vdss and is part of the CoolMOS™ series. This device provides 16A continuous drain current and 160W power dissipation, representing the lowest-current and lowest-power option among the substitutes. The SPW16N50C3FKSA1 features the lowest gate charge (66 nC @ 10V) and lowest input capacitance (1600 pF @ 25V), which reduces switching losses significantly. The maximum gate voltage is ±20V. Both devices are ROHS3 compliant with MSL Level 1 rating and identical operating temperature ranges. This part is applicable only in applications where 560V voltage rating is sufficient and lower current requirements exist.

Frequently Asked Questions (FAQ)

Q: Can the APT38F80B2 be used as a direct replacement for the IXFX32N80P?

A: The APT38F80B2 is electrically compatible as a substitute. Both devices maintain 800V Vdss rating, TO-247-3 through-hole packaging, and identical operating temperature ranges. The APT38F80B2 provides higher current capacity (41A vs. 32A) and power dissipation (1040W vs. 830W), making it suitable for applications requiring equal or greater performance. Pin configuration and gate drive requirements are compatible.

Q: What is the key difference between the 800V-rated substitutes and the lower-voltage options?

A: The APT38F80B2 and SPW17N80C3FKSA1 maintain the 800V Vdss rating of the IXFX32N80P, ensuring compatibility in high-voltage applications. The IRFP27N60KPBF (600V) and SPW16N50C3FKSA1 (560V) are suitable only for applications where the lower voltage rating is acceptable. Voltage rating selection depends on the maximum drain-to-source voltage encountered in the circuit.

Q: Are all substitute parts available in the same package configuration?

A: All substitute parts are housed in TO-247-3 through-hole packages, maintaining mechanical and thermal compatibility with the IXFX32N80P. Pin assignments and lead spacing are consistent across all listed substitutes, allowing direct board-level replacement without layout modifications.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFX32N80P requires 150 nC @ 10V. The APT38F80B2 requires 260 nC, while the SPW17N80C3FKSA1 requires 177 nC. Higher gate charge increases switching losses and may require higher gate drive current. Lower gate charge (SPW16N50C3FKSA1 at 66 nC) reduces switching losses but applies only to the 560V device.

Q: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive circuit design and switching speed. The IXFX32N80P has 8800 pF @ 25V. The APT38F80B2 has 8070 pF, while the Infineon CoolMOS™ devices have significantly lower values (SPW17N80C3FKSA1 at 2320 pF and SPW16N50C3FKSA1 at 1600 pF). Lower input capacitance reduces gate drive power requirements and may improve switching performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating, matching the IXFX32N80P compliance status. All devices are suitable for applications requiring RoHS3 certification.

Q: Can the SPW17N80C3FKSA1 handle the same current as the IXFX32N80P?

A: No. The SPW17N80C3FKSA1 is rated for 17A continuous drain current at 25°C, compared to 32A for the IXFX32N80P. The SPW17N80C3FKSA1 is suitable only for applications requiring 17A or less. For applications requiring 32A or higher current, the APT38F80B2 (41A) is the appropriate 800V substitute.

Q: What is the maximum gate voltage for each substitute part?

A: The IXFX32N80P, APT38F80B2, and IRFP27N60KPBF support ±30V maximum gate voltage. The Infineon CoolMOS™ devices (SPW17N80C3FKSA1 and SPW16N50C3FKSA1) support ±20V maximum gate voltage. Gate drive circuits must be designed within these voltage limits.

Q: Are there thermal considerations when substituting these parts?

A: All substitute parts operate within the same temperature range (-55°C to 150°C TJ). However, power dissipation ratings differ: IXFX32N80P at 830W, APT38F80B2 at 1040W, SPW17N80C3FKSA1 at 227W, IRFP27N60KPBF at 500W, and SPW16N50C3FKSA1 at 160W. Thermal management design must account for the specific power dissipation of the selected device.

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