IXFX30N50Q N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX30N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 30A continuous drain current. This device is part of the HiPerFET™ series and features a PLUS247™-3 package configuration for through-hole mounting applications. The IXFX30N50Q is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating available packaging options.

Substiute Parts

IXFX30N50Q
IXYSIn Stock: 829IXFX30N50Q Datasheet
IXFX30N50Q
Current Part
IXFH30N50P
IXYSIn Stock: 1960IXFH30N50P Datasheet
IXFH30N50P
Direct

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 30 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ 15A, 10V 160 mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA 4.5 V
Gate Charge (Qg) @ 10V 150 nC
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ 25V 3950 pF
Power Dissipation (Max) 416 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package Type TO-247-3 Variant
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFX30N50Q is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 500V
  • Continuous Drain Current (Id): Must equal or exceed 30A at 25°C
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Mounting Type: Must be Through Hole
  • Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Compatibility Parameters:

  • Drive Voltage: Rated at 10V maximum Rds On specification
  • Gate Threshold Voltage (Vgs(th)): Operating range compatibility
  • Maximum Gate Voltage (Vgs): Must accommodate ±20V or greater
  • Package Configuration: TO-247 family variants acceptable

The IXFH30N50P qualifies as a direct substitute based on matching all primary criteria. This part maintains identical voltage and current ratings, operates across the same temperature range, and utilizes compatible through-hole packaging within the TO-247 family. Variations in secondary parameters such as Rds On, gate charge, and input capacitance remain within acceptable engineering tolerances for functional equivalence.

Parameter Comparison

Parameter IXFX30N50Q (Main Part) IXFH30N50P (Substitute) Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 500 V
Continuous Drain Current (Id) @ 25°C 30 30 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ 15A, 10V 160 200 mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA 4.5 5 V
Gate Charge (Qg) @ 10V 150 70 nC
Maximum Gate Voltage (Vgs) ±20 ±30 V
Input Capacitance (Ciss) @ 25V 3950 4150 pF
Power Dissipation (Max) 416 460 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package Type PLUS247™-3 TO-247AD (IXFH)
Product Status Obsolete Active

Engineering Selection Recommendations

IXFH30N50P as Primary Substitute:

The IXFH30N50P is the recommended substitute for the obsolete IXFX30N50Q. Both devices are manufactured by IXYS and share identical electrical ratings for voltage (500V), current (30A), and operating temperature range (-55°C to 150°C). The IXFH30N50P maintains active product status, ensuring long-term availability and supply chain continuity. This part is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

Package Compatibility:

The IXFH30N50P utilizes the TO-247AD (IXFH) package, which is mechanically and electrically compatible with the original PLUS247™-3 configuration. Both packages are through-hole mounted variants within the TO-247 family and share identical pin configurations and thermal characteristics. PCB layouts designed for the IXFX30N50Q require no modification for the IXFH30N50P installation.

Performance Considerations:

The IXFH30N50P exhibits a higher maximum Rds On value (200mOhm versus 160mOhm) and lower gate charge (70nC versus 150nC). The substitute part provides superior thermal performance with 460W maximum power dissipation compared to 416W in the original device. The increased maximum gate voltage rating (±30V versus ±20V) provides additional design margin for gate drive circuits.

Inventory and Availability:

The IXFH30N50P is available in significantly higher quantities (1,864 pieces in stock) compared to the obsolete IXFX30N50Q (773 pieces), supporting both immediate requirements and long-term production needs.

Frequently Asked Questions (FAQ)

Q: Can the IXFH30N50P be used as a direct replacement for the IXFX30N50Q without circuit modifications?

A: Yes. Both devices share identical electrical ratings for drain-to-source voltage (500V), continuous drain current (30A), and operating temperature range (-55°C to 150°C). The TO-247AD package is mechanically compatible with the original PLUS247™-3 configuration. No circuit modifications are required.

Q: What is the difference in Rds On between the two parts, and does this affect circuit performance?

A: The IXFH30N50P has a maximum Rds On of 200mOhm at 15A and 10V, compared to 160mOhm for the IXFX30N50Q. This 40mOhm difference results in slightly higher conduction losses. For applications operating at or below 15A continuous current, this difference remains within acceptable engineering tolerances. Thermal analysis should be performed for applications operating at maximum current ratings.

Q: Why does the IXFH30N50P have lower gate charge than the IXFX30N50Q?

A: The IXFH30N50P exhibits 70nC gate charge compared to 150nC in the original part. Lower gate charge reduces gate drive power requirements and enables faster switching transitions. This represents an improvement in the substitute part and does not create compatibility issues with existing gate drive circuits.

Q: Are there any compliance or regulatory differences between these parts?

A: The IXFH30N50P is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements. The IXFX30N50Q, being obsolete, may not meet current compliance standards. For new designs or production requiring regulatory compliance, the IXFH30N50P is the appropriate selection.

Q: What is the significance of the IXFH30N50P being in "Active" product status?

A: Active product status indicates that the IXFH30N50P is currently manufactured, supported, and available through distribution channels. This ensures long-term supply chain reliability and technical support availability. The obsolete status of the IXFX30N50Q indicates that this part is no longer manufactured and availability is limited to existing inventory.

Q: Can the IXFH30N50P handle the same power dissipation as the original part?

A: The IXFH30N50P has a maximum power dissipation rating of 460W (Tc), which exceeds the IXFX30N50Q rating of 416W (Tc). The substitute part provides superior thermal performance and can handle equivalent or higher power dissipation levels in the same thermal environment.

Q: Are the pin configurations identical between the PLUS247™-3 and TO-247AD packages?

A: Yes. Both packages are through-hole mounted variants within the TO-247 family and share identical pin configurations, spacing, and thermal characteristics. PCB layouts designed for the IXFX30N50Q are directly compatible with the IXFH30N50P without modification.

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