IXFX30N110P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX30N110P is an N-Channel MOSFET manufactured by IXYS, rated for 1100V drain-to-source voltage with 30A continuous drain current at 25°C. This device is part of the HiPerFET™ Polar series and is housed in a PLUS247™-3 package for through-hole mounting applications. The IXFX30N110P is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity in high-voltage switching applications.

Substiute Parts

IXFX30N110P

IXYSIn Stock: 903IXFX30N110P Datasheet

Current PartRFQ

STWA20N95K5

STMicroelectronicsIn Stock: 3484STWA20N95K5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX30N110P requires evaluation against the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support the application's maximum operating voltage. The IXFX30N110P operates at 1100V Vdss. Substitutes with lower voltage ratings (such as 950V) are acceptable only in applications where the actual circuit voltage does not exceed the substitute's rating.

Current Capacity: The IXFX30N110P delivers 30A continuous drain current. Substitutes with lower current ratings require verification that circuit current demands do not exceed the substitute's specification.

On-State Resistance (Rds On): The IXFX30N110P exhibits 360 mOhm maximum at 15A and 10V gate drive. Substitutes with comparable or lower Rds On values maintain equivalent power dissipation characteristics.

Gate Drive Characteristics: Both the main part and substitutes operate with 10V drive voltage and ±30V maximum gate voltage, ensuring compatibility with standard gate driver circuits.

Thermal Performance: The IXFX30N110P dissipates 960W maximum. Substitutes with lower power dissipation ratings require thermal design review for the target application.

Package and Mounting: The IXFX30N110P uses TO-247-3 through-hole mounting. Substitutes must maintain identical or compatible package geometry and lead configuration.

Compliance and Status: The IXFX30N110P is obsolete. Active substitutes with current manufacturing status and maintained RoHS3 compliance are preferred for new designs and long-term supply assurance.

Parameter Comparison

Engineering Selection Recommendations

STWA20N95K5 as Substitute for IXFX30N110P:

The STWA20N95K5 manufactured by STMicroelectronics is an active product with current manufacturing status, providing supply continuity advantages over the obsolete IXFX30N110P. Both devices maintain identical operating temperature ranges (-55°C to 150°C), RoHS3 compliance, and REACH unaffected status, ensuring regulatory alignment.

Electrical Compatibility Considerations:

The STWA20N95K5 operates at 950V Vdss compared to the IXFX30N110P's 1100V rating. This 150V reduction in voltage rating requires circuit voltage verification. Applications operating below 950V are compatible; applications requiring the full 1100V rating cannot use this substitute.

The STWA20N95K5 provides 17.5A continuous drain current versus the IXFX30N110P's 30A. Circuit current requirements must not exceed 17.5A for this substitute to be viable.

Thermal Performance:

The STWA20N95K5 dissipates 250W maximum compared to the IXFX30N110P's 960W. Thermal design review is required to confirm that the lower power dissipation rating accommodates the target application's thermal environment and duty cycle.

Gate Drive Characteristics:

Both devices operate with identical maximum gate voltage (±30V) and 10V drive voltage specifications, ensuring compatibility with existing gate driver circuits without modification.

Package Compatibility:

Both devices use TO-247-3 through-hole packages with compatible lead configurations, permitting direct physical substitution on existing printed circuit boards.

Compliance and Supply:

The STWA20N95K5's active product status provides superior long-term availability and supply chain stability compared to the obsolete IXFX30N110P. Both devices maintain equivalent environmental compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can the STWA20N95K5 directly replace the IXFX30N110P in all applications?

A: Direct replacement is not universal. The STWA20N95K5 has lower voltage (950V vs. 1100V) and current (17.5A vs. 30A) ratings. Substitution is valid only when circuit voltage remains below 950V and circuit current does not exceed 17.5A. Thermal design review is also required due to the lower power dissipation rating (250W vs. 960W).

Q: What are the key electrical differences between these two devices?

A: The primary differences are voltage rating (1100V vs. 950V), continuous drain current (30A vs. 17.5A), power dissipation (960W vs. 250W), gate charge (235 nC vs. 40 nC), and input capacitance (13600 pF vs. 1500 pF). Gate threshold voltage, maximum gate voltage, and operating temperature range are equivalent.

Q: Are the packages physically compatible?

A: Yes. Both devices use TO-247-3 through-hole packages with compatible lead configurations, allowing direct physical substitution on existing printed circuit boards without layout modification.

Q: Why is the STWA20N95K5 recommended despite lower ratings?

A: The STWA20N95K5 is an active product with current manufacturing status, ensuring long-term supply availability. The IXFX30N110P is obsolete, creating supply risk. The STWA20N95K5 is recommended only for applications where its electrical ratings are sufficient.

Q: Do both devices require identical gate driver circuits?

A: Yes. Both devices operate with ±30V maximum gate voltage and 10V drive voltage specifications. Existing gate driver circuits require no modification for substitution.

Q: What compliance certifications do both devices maintain?

A: Both devices are RoHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Regulatory compliance is equivalent between the two parts.

Q: How does the lower gate charge of the STWA20N95K5 affect circuit performance?

A: The STWA20N95K5 exhibits significantly lower gate charge (40 nC vs. 235 nC), resulting in faster switching transitions and reduced gate driver power consumption. This characteristic may improve overall circuit efficiency in switching applications.

Q: Is thermal design modification necessary when substituting to the STWA20N95K5?

A: Yes. The STWA20N95K5's maximum power dissipation (250W) is substantially lower than the IXFX30N110P (960W). Thermal design review is required to confirm that the application's thermal environment and duty cycle remain within the substitute's dissipation limits.