IXFX26N60Q N-Channel 600V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX26N60Q is an N-Channel 600V 26A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement. The part operates across a temperature range of -55°C to 150°C and dissipates up to 360W at the case temperature. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal parameters while accommodating the through-hole TO-247-3 package format.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	26	A
On-State Resistance (Rds On) @ 13A, 10V	250	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	200	nC
Input Capacitance (Ciss) @ 25V	5100	pF
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IXFX26N60Q are classified based on electrical parameter compatibility within the following criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 26A or greater at 25°C
On-State Resistance (Rds On): 250mOhm or lower at specified gate voltage
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Grouping Categories:

Group 1 – Direct Electrical Equivalents (600V, 26A+): Parts meeting or exceeding the primary current rating with matching voltage specification and comparable on-state resistance characteristics.

Group 2 – Functional Alternatives (600V, 24-25A): Parts with slightly reduced current ratings but maintaining 600V voltage specification and compatible thermal performance for applications with lower current demands.

Group 3 – Higher Voltage Alternatives (800V, 17A): Parts with elevated voltage ratings and reduced current specifications, suitable for applications requiring higher voltage margin with lower current requirements.

All substitute parts maintain the TO-247-3 package format and operate within the -55°C to 150°C temperature range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status	Package
IXFX26N60Q	IXYS	600	26	250 @ 13A	200 @ 10V	5100 @ 25V	360	Obsolete	TO-247-3
IRFP27N60KPBF	Vishay Siliconix	600	27	220 @ 16A	180 @ 10V	4660 @ 25V	500	Active	TO-247-3
IRFP26N60LPBF	Vishay Siliconix	600	26	250 @ 16A	180 @ 10V	5020 @ 25V	470	Active	TO-247-3
APT6025BLLG	Microchip Technology	600	24	250 @ 12A	65 @ 10V	2910 @ 25V	N/A	Active	TO-247-3
APT6025BVRG	Microchip Technology	600	25	250 @ 500mA	275 @ 10V	5160 @ 25V	N/A	Active	TO-247-3
STW19NM60N	STMicroelectronics	600	13	285 @ 6.5A	35 @ 10V	1000 @ 50V	110	Active	TO-247-3
SPW17N80C3FKSA1	Infineon Technologies	800	17	290 @ 11A	177 @ 10V	2320 @ 25V	227	Active	TO-247-3
IPW80R280P7XKSA1	Infineon Technologies	800	17	280 @ 7.2A	36 @ 10V	1200 @ 500V	101	Active	TO-247-3

Engineering Selection Recommendations

Group 1 – Direct Electrical Equivalents:

IRFP27N60KPBF (Vishay Siliconix) provides the closest electrical match with 27A continuous drain current at 600V, exceeding the original 26A specification. The on-state resistance of 220mOhm at 16A is lower than the IXFX26N60Q specification, resulting in reduced conduction losses. Power dissipation capability of 500W exceeds the original 360W rating. This part is active and RoHS3 compliant. Gate charge of 180nC is lower, reducing switching losses.

IRFP26N60LPBF (Vishay Siliconix) matches the original 26A current rating at 600V with identical on-state resistance of 250mOhm. Power dissipation of 470W exceeds the original specification. This part is active and RoHS3 compliant with REACH unaffected status. Input capacitance of 5020pF closely matches the original 5100pF specification.

Group 2 – Functional Alternatives (600V, 24-25A):

APT6025BLLG (Microchip Technology) operates at 600V with 24A continuous drain current, providing a 92% current rating relative to the original part. On-state resistance matches at 250mOhm. This part is active and RoHS3 compliant. Gate charge of 65nC is significantly lower, reducing switching losses in applications with moderate current requirements.

APT6025BVRG (Microchip Technology) operates at 600V with 25A continuous drain current, providing a 96% current rating. On-state resistance matches at 250mOhm. This part is active and RoHS3 compliant. Input capacitance of 5160pF closely matches the original specification.

Group 3 – Higher Voltage Alternatives (800V, 17A):

SPW17N80C3FKSA1 (Infineon Technologies) operates at 800V with 17A continuous drain current. This part is suitable for applications requiring higher voltage margin with reduced current demands. The part is active and RoHS3 compliant. Gate charge of 177nC and input capacitance of 2320pF provide lower switching characteristics.

IPW80R280P7XKSA1 (Infineon Technologies) operates at 800V with 17A continuous drain current. This part is active and RoHS3 compliant. Gate charge of 36nC is significantly lower, reducing switching losses in high-frequency applications.

Lower Current Alternative:

STW19NM60N (STMicroelectronics) operates at 600V with 13A continuous drain current. This part is active, RoHS3 compliant, and qualified to AEC-Q101 automotive standard. Gate charge of 35nC is significantly lower than the original specification. This part is suitable for applications with reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can IRFP27N60KPBF directly replace IXFX26N60Q in all applications?

A: IRFP27N60KPBF meets or exceeds all primary electrical parameters of IXFX26N60Q. The 27A rating exceeds the original 26A specification, and the 220mOhm on-state resistance is lower than the original 250mOhm. Both parts operate at 600V and use the TO-247-3 package. Verification of gate drive circuitry compatibility is necessary, as gate charge differs (180nC versus 200nC).

Q: What is the difference between Group 1 and Group 2 substitutes?

A: Group 1 substitutes (IRFP27N60KPBF, IRFP26N60LPBF) maintain the 26A or higher current rating at 600V, providing direct electrical equivalence. Group 2 substitutes (APT6025BLLG, APT6025BVRG) operate at 600V with reduced current ratings of 24-25A, suitable for applications with lower current demands while maintaining voltage specification.

Q: Are higher voltage alternatives (800V) suitable for 600V applications?

A: Higher voltage alternatives such as SPW17N80C3FKSA1 and IPW80R280P7XKSA1 operate at 800V with 17A current rating. These parts are suitable for applications requiring higher voltage margin but with reduced current capacity. The 800V rating provides additional safety margin in 600V applications. However, the 17A current rating is significantly lower than the original 26A specification.

Q: What packaging considerations apply to these substitutes?

A: All listed substitute parts use the TO-247-3 through-hole package, matching the original IXFX26N60Q package format. No PCB layout modifications are required for package compatibility. Thermal management considerations remain consistent across all substitutes due to identical package geometry.

Q: Which substitute part offers the lowest switching losses?

A: IPW80R280P7XKSA1 provides the lowest gate charge at 36nC, followed by STW19NM60N at 35nC. Lower gate charge reduces switching losses in high-frequency applications. However, these parts have reduced current ratings (17A and 13A respectively) compared to the original 26A specification.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant. IRFP27N60KPBF, IRFP26N60LPBF, APT6025BLLG, APT6025BVRG, SPW17N80C3FKSA1, IPW80R280P7XKSA1, and STW19NM60N all meet RoHS3 requirements. Compliance documentation is available from respective manufacturers.

Q: What is the significance of gate charge differences between substitutes?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. IRFP27N60KPBF and IRFP26N60LPBF have gate charges of 180nC, lower than the original 200nC. APT6025BLLG has significantly lower gate charge at 65nC, reducing switching losses in high-frequency applications.

Q: Can STW19NM60N be used as a direct replacement despite lower current rating?

A: STW19NM60N operates at 600V with 13A continuous drain current, providing only 50% of the original 26A rating. This part is suitable only for applications with reduced current requirements. The part is active and AEC-Q101 qualified for automotive applications. Gate charge of 35nC provides lower switching losses compared to the original specification.

Q: What compliance certifications should be verified for critical applications?

A: All substitute parts are RoHS3 compliant and REACH unaffected. STW19NM60N carries additional AEC-Q101 automotive qualification. For critical applications, verify ECCN classification (all parts listed as EAR99) and HTSUS code (8541.29.0095) for export compliance. Moisture sensitivity level is 1 (Unlimited) for all parts except IPW80R280P7XKSA1, which is not applicable.

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