IXFX26N100P N-Channel 1000V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX26N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 26A continuous drain current at 25°C. This device operates in the HiPerFET™ Polar series and is housed in a TO-247-3 through-hole package. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and package form factor. Alternative devices may be required due to inventory availability, supply chain considerations, or application-specific performance optimization within the defined parameter envelope.

Substiute Parts

IXFX26N100P

IXYSIn Stock: 881IXFX26N100P Datasheet

Current PartRFQ

APT29F100B2

Microchip TechnologyIn Stock: 932APT29F100B2 Datasheet

SimilarRFQ

STW22N95K5

STMicroelectronicsIn Stock: 2999STW22N95K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFX26N100P is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum drain-to-source voltage (Vdss) rating of 1000V to ensure equivalent or superior voltage withstand capability.

Current Capacity: Substitute parts must support continuous drain current (Id) at or above 26A at 25°C to maintain functional equivalence in high-current applications.

On-Resistance Performance: The on-resistance (Rds On) characteristic at specified gate voltage (10V) determines power dissipation and thermal performance. Substitutes with comparable or lower Rds On values maintain electrical efficiency.

Package Compatibility: All identified substitutes utilize the TO-247-3 through-hole package, ensuring mechanical and thermal interface compatibility with existing PCB designs and heatsink mounting arrangements.

Regulatory Compliance: All substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL 1 rating, ensuring compatibility with modern manufacturing and environmental standards.

Temperature Operating Range: All parts operate across the -55°C to 150°C junction temperature range, supporting equivalent thermal performance envelopes.

Parameter Comparison

Engineering Selection Recommendations

APT29F100B2 (Microchip Technology): This substitute provides superior current capacity at 30A continuous drain current, exceeding the IXFX26N100P specification by 15%. The APT29F100B2 maintains the 1000V voltage rating and delivers higher power dissipation capability at 1040W. On-resistance performance is comparable at 440mOhm. This device is suitable for applications requiring higher current headroom or thermal margin within the same voltage class. All regulatory certifications (RoHS3, REACH unaffected, MSL 1) align with the main part.

STW22N95K5 (STMicroelectronics): This substitute operates at a reduced voltage rating of 950V, representing a 5% reduction from the IXFX26N100P specification. Continuous drain current is rated at 17.5A, approximately 33% lower than the main part. The STW22N95K5 features superior on-resistance at 330mOhm and significantly lower gate charge at 48nC, resulting in reduced switching losses. This device includes automotive-grade qualification (AEC-Q101) and is suitable for applications where voltage and current requirements are within the reduced envelope but switching efficiency is prioritized. All regulatory compliance requirements are maintained.

Selection Criteria: Choose APT29F100B2 when higher current capacity and thermal performance are required within the 1000V voltage class. Select STW22N95K5 only when application voltage and current requirements are compatible with the reduced specifications and automotive qualification is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the APT29F100B2 directly replace the IXFX26N100P in all applications?

A: The APT29F100B2 maintains the 1000V voltage rating and exceeds the 26A current specification with 30A capacity. Both devices use the TO-247-3 package and share identical operating temperature ranges. Direct substitution is electrically and mechanically compatible. Gate charge differs (260nC vs. 197nC), which may affect switching speed in gate-drive-limited circuits.

Q: Is the STW22N95K5 suitable as a substitute for the IXFX26N100P?

A: The STW22N95K5 operates at 950V, which is 50V below the IXFX26N100P rating. This device is suitable only for applications where the maximum operating voltage does not exceed 950V. The 17.5A current rating is also 33% lower than the main part. The TO-247-3 package and temperature range are compatible. Automotive qualification (AEC-Q101) is an additional feature not present in the main part.

Q: What are the key differences in on-resistance between these devices?

A: The IXFX26N100P exhibits 390mOhm on-resistance at 13A and 10V gate voltage. The APT29F100B2 shows 440mOhm at 16A and 10V, representing approximately 13% higher on-resistance. The STW22N95K5 demonstrates 330mOhm at 9A and 10V, approximately 15% lower on-resistance. On-resistance directly impacts power dissipation and thermal performance in switching applications.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IXFX26N100P, APT29F100B2, and STW22N95K5 are all RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity ratings. All devices maintain REACH unaffected status and are suitable for modern manufacturing environments.

Q: How do gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFX26N100P requires 197nC at 10V, the APT29F100B2 requires 260nC, and the STW22N95K5 requires only 48nC. Higher gate charge increases switching losses and may require higher gate drive current. Lower gate charge reduces switching losses but may require more precise gate drive control.

Q: Can these devices be used interchangeably in high-frequency switching applications?

A: Gate charge and input capacitance affect high-frequency performance. The STW22N95K5 has significantly lower gate charge (48nC) and input capacitance (1550pF at 100V), making it superior for high-frequency applications. The IXFX26N100P and APT29F100B2 have higher gate charge values, which may limit switching frequency performance. Application-specific gate drive capability must be evaluated.

Q: What is the significance of the TO-247-3 package for all three devices?

A: The TO-247-3 through-hole package provides mechanical and thermal compatibility across all three devices. Existing PCB layouts, heatsink mounting arrangements, and thermal interface materials remain unchanged during substitution. This package standardization simplifies design migration and reduces qualification risk.

Q: Are there any temperature-related performance differences?

A: All three devices operate across the identical -55°C to 150°C junction temperature range. On-resistance and other electrical parameters vary with temperature according to device-specific characteristics. Thermal performance differs due to power dissipation ratings: IXFX26N100P at 780W, APT29F100B2 at 1040W, and STW22N95K5 at 250W. Heatsink selection must account for these differences.