IXFX24N100Q3 Equivalent & Substitute Parts

Part Overview

The IXFX24N100Q3 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 24A continuous drain current at 25°C. Manufactured by IXYS, this device belongs to the HiPerFET™ Q3 Class series and is housed in a PLUS247™-3 package variant of TO-247-3. The component is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical and mechanical parameters align within the allowed specifications for high-voltage N-Channel MOSFET applications. Substitution becomes necessary when the primary part is unavailable, when inventory constraints require alternative sourcing, or when design flexibility permits operation within the parameter ranges of qualified alternatives.

Substiute Parts

IXFX24N100Q3

IXYSIn Stock: 2017IXFX24N100Q3 Datasheet

Current PartRFQ

STW22N95K5

STMicroelectronicsIn Stock: 2999STW22N95K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX24N100Q3 is determined by alignment of the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology required
• Drain to Source Voltage (Vdss): Minimum 950V acceptable; 1000V preferred for full voltage margin
• Continuous Drain Current (Id) @ 25°C: Minimum 17.5A acceptable; 24A preferred for full current capacity
• Drive Voltage: 10V gate drive compatibility
• Operating Temperature Range: -55°C to 150°C (TJ) required

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package / Case: TO-247-3 required for direct mechanical substitution
• Supplier Device Package: TO-247-3 or PLUS247™-3 variants

Compliance Criteria:

• RoHS Status: ROHS3 Compliant required
• Product Status: Active required

The STW22N95K5 meets these substitution criteria with a Vdss of 950V (within acceptable margin of the 1000V specification) and continuous drain current of 17.5A (within acceptable margin of the 24A specification). Both devices operate across the identical temperature range, share TO-247-3 package compatibility, and maintain RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

IXFX24N100Q3 (Primary Selection)

The IXFX24N100Q3 is the primary component for applications requiring the full specified performance envelope. This device delivers 1000W maximum power dissipation and 24A continuous drain current, supporting high-power switching applications. The part is Active in product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Selection of this part is appropriate when design specifications demand maximum voltage rating (1000V Vdss) and maximum current capacity (24A Id).

STW22N95K5 (Substitute Selection)

The STW22N95K5 is a qualified substitute for applications where the reduced voltage rating (950V Vdss) and reduced current capacity (17.5A Id) are acceptable within circuit design margins. This STMicroelectronics device is Active in product status, RoHS3 compliant, and carries AEC-Q101 automotive qualification. The substitute exhibits lower gate charge (48 nC versus 140 nC) and lower input capacitance (1550 pF versus 7200 pF), which may provide switching speed advantages in specific circuit topologies. The reduced power dissipation rating (250W versus 1000W) indicates this substitute is suitable for lower-power applications within the voltage and current parameter ranges.

Both devices share identical operating temperature range (-55°C to 150°C TJ), TO-247-3 package compatibility, and 10V gate drive voltage specification. Selection between these parts depends on application power level, voltage margin requirements, and current capacity needs.

Frequently Asked Questions (FAQ)

Q: Can the STW22N95K5 directly replace the IXFX24N100Q3 in all applications?

A: Direct replacement is possible only when the application circuit design accommodates the reduced Vdss (950V versus 1000V) and reduced Id (17.5A versus 24A). The 50V voltage margin reduction and 6.5A current reduction must be evaluated against circuit operating conditions and safety margins. Both devices share TO-247-3 package compatibility and identical gate drive voltage (10V), enabling mechanical and electrical interface compatibility.

Q: What are the key electrical differences between these parts?

A: The IXFX24N100Q3 provides higher voltage rating (1000V), higher continuous current (24A), and higher power dissipation capability (1000W). The STW22N95K5 provides lower gate charge (48 nC versus 140 nC) and lower input capacitance (1550 pF versus 7200 pF), which may reduce switching losses in certain circuit configurations. Both devices operate across the identical temperature range and share 10V drive voltage specification.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXFX24N100Q3 and STW22N95K5 are RoHS3 compliant with unlimited moisture sensitivity level (MSL 1). Both parts are Active in product status and suitable for current production applications.

Q: What is the significance of the TO-247-3 package for substitution?

A: The TO-247-3 package is a three-lead through-hole configuration that provides mechanical and thermal interface compatibility between the IXFX24N100Q3 and STW22N95K5. This package standardization enables direct socket compatibility without PCB redesign. Both devices use identical lead configuration and mounting requirements.

Q: Does the STW22N95K5 carry any additional qualification?

A: The STW22N95K5 carries AEC-Q101 automotive qualification, indicating compliance with automotive-grade reliability and testing standards. The IXFX24N100Q3 does not list automotive qualification in the provided specifications. This qualification may be relevant for automotive or mission-critical applications.

Q: How do gate charge differences affect circuit performance?

A: The STW22N95K5 exhibits significantly lower gate charge (48 nC versus 140 nC at 10V Vgs). Lower gate charge reduces the charge transfer required during switching transitions, potentially decreasing switching losses and enabling faster switching speeds in gate driver circuits. This characteristic may provide performance advantages in high-frequency switching applications, provided the reduced voltage and current ratings remain acceptable.