IXFX24N100F N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX24N100F is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 24A continuous drain current at 25°C. This device is packaged in the PLUS247™-3 (TO-247-3) through-hole configuration and is part of the HiPerRF™ series. The IXFX24N100F is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IXFX24N100F

IXYSIn Stock: 1062IXFX24N100F Datasheet

Current PartRFQ

IXFX32N100P

IXYSIn Stock: 2156IXFX32N100P Datasheet

DirectRFQ

STW21N90K5

STMicroelectronicsIn Stock: 2193STW21N90K5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX24N100F is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 1000V
• Continuous Drain Current (Id): Must equal or exceed 24A at 25°C
• Package Type: Must be TO-247-3 or compatible through-hole variant
• Operating Temperature Range: Must encompass -55°C to 150°C
• On-State Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values indicate faster switching characteristics

Substitution Logic: Direct substitutes maintain identical or superior electrical ratings while preserving mechanical compatibility. Parts with higher current ratings, lower on-state resistance, or lower gate charge provide performance improvements. Parts with lower voltage ratings or current ratings do not qualify as substitutes.

Parameter Comparison

Engineering Selection Recommendations

IXFX32N100P (Direct Substitute - IXYS): The IXFX32N100P is an active product from IXYS that maintains the same 1000V voltage rating and TO-247-3 package configuration as the IXFX24N100F. This part provides superior electrical performance with 32A continuous drain current (33% higher than the main part), reduced on-state resistance of 320 mOhm, and increased power dissipation capability of 960W. The IXFX32N100P is ROHS3 compliant and carries unlimited moisture sensitivity rating. This substitute is suitable for direct replacement in applications where the higher current rating and improved thermal performance provide design margin.

STW21N90K5 (Manufacturer Recommended - STMicroelectronics): The STW21N90K5 is an active product from STMicroelectronics rated for 900V drain-to-source voltage with 18.5A continuous drain current. This part does not meet the primary substitution criterion of maintaining 1000V voltage rating and falls below the 24A current requirement. However, it is listed as a manufacturer-recommended alternative and is ROHS3 compliant with active product status. The STW21N90K5 exhibits significantly lower gate charge (43 nC versus 195 nC), which provides faster switching characteristics. This substitute is applicable only in applications where the 900V voltage rating is acceptable and the 18.5A current rating is sufficient.

Product Status Consideration: Both substitute parts carry active product status, ensuring long-term availability and supply chain stability compared to the obsolete IXFX24N100F. Selection between substitutes depends on application voltage and current requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXFX32N100P be used as a direct replacement for the IXFX24N100F?

A: Yes. The IXFX32N100P maintains the same 1000V drain-to-source voltage rating and TO-247-3 package configuration. The higher 32A current rating and improved electrical characteristics make it suitable for direct replacement. No circuit modifications are required for mechanical or electrical compatibility.

Q: Why is the STW21N90K5 listed as a substitute if it has lower voltage and current ratings?

A: The STW21N90K5 is listed as a manufacturer-recommended alternative based on the provided input data. However, it does not meet the primary substitution criteria of maintaining 1000V voltage and 24A current ratings. This part is applicable only in applications where 900V voltage and 18.5A current are acceptable design parameters.

Q: What is the significance of gate charge (Qg) differences between these parts?

A: Gate charge directly affects switching speed and drive circuit requirements. The STW21N90K5 exhibits 43 nC gate charge compared to 195 nC for the IXFX24N100F, resulting in faster switching transitions. The IXFX32N100P has 225 nC gate charge, slightly higher than the main part. Lower gate charge reduces switching losses and allows faster operating frequencies.

Q: Are all substitute parts ROHS3 compliant?

A: The IXFX32N100P and STW21N90K5 are both ROHS3 compliant. The IXFX24N100F RoHS status is not specified in the provided data. Both active substitutes meet current environmental compliance requirements.

Q: What is the difference between PLUS247™-3 and TO-247-3 packaging?

A: PLUS247™-3 is IXYS's proprietary designation for the TO-247-3 package format. The IXFX32N100P is specified as TO-247-3 Variant, indicating mechanical compatibility with the original PLUS247™-3 package. Both packages are through-hole configurations with identical pin configurations and thermal characteristics.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance determines conduction losses and heat dissipation during device operation. Lower Rds On values reduce power loss and thermal stress. The IXFX32N100P (320 mOhm) provides lower losses than the IXFX24N100F (390 mOhm), while the STW21N90K5 (299 mOhm) offers the lowest resistance but at reduced voltage and current ratings.

Q: Can these parts be used interchangeably in existing PCB designs?

A: The IXFX32N100P maintains identical TO-247-3 through-hole pin configuration and can be used interchangeably without PCB modifications. The STW21N90K5 also uses TO-247-3 packaging and is mechanically compatible, but application-level verification is required to confirm that 900V voltage and 18.5A current ratings are acceptable for the specific circuit design.