IXFX21N100Q Equivalent & Substitute Parts

Part Overview

The IXFX21N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 21A continuous drain current at 25°C. This device is part of the IXYS HiPerFET™ Q Class series and is designed for high-voltage switching applications requiring through-hole mounting in the PLUS247™-3 package. The part is Active in product status and fully compliant with RoHS3 and REACH regulations. Equivalent and substitute parts are identified to provide design flexibility when the primary part is unavailable or when application requirements necessitate alternative electrical or thermal characteristics.

Substiute Parts

IXFX21N100Q
IXYSIn Stock: 1531IXFX21N100Q Datasheet
IXFX21N100Q
Current Part
IXFX24N100Q3
IXYSIn Stock: 2017IXFX24N100Q3 Datasheet
IXFX24N100Q3
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 1000 V
Continuous Drain Current (Id) @ 25°C 21 A (Tc)
On-State Resistance (Rds On Max) @ 10.5A, 10V 500 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA 5.5 V
Power Dissipation (Max) 500 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Variant (PLUS247™-3) Through Hole
Gate Charge (Qg Max) @ 10V 170 nC
Input Capacitance (Ciss Max) @ 25V 6900 pF

Substitute Part Grouping Explanation

Substitution of the IXFX21N100Q is determined by strict equivalence in the following critical parameters:

Mandatory Equivalence Parameters:

  • Drain-to-Source Voltage (Vdss): 1000V
  • Package Type: TO-247-3 Variant (PLUS247™-3) through-hole mounting
  • FET Type: N-Channel MOSFET
  • Technology: Metal Oxide Semiconductor

Allowable Variation Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 21A
  • On-State Resistance (Rds On): Equal to or lower than 500mOhm (lower resistance indicates improved performance)
  • Power Dissipation: Equal to or greater than 500W
  • Gate Threshold Voltage (Vgs(th)): Within the specified range for gate drive compatibility
  • Gate Charge (Qg): Lower values indicate faster switching characteristics
  • Input Capacitance (Ciss): Variation acceptable within application switching frequency requirements

The IXFX24N100Q3 qualifies as a substitute part because it maintains identical voltage rating, package configuration, and FET technology while providing enhanced current handling (24A vs. 21A), improved on-state resistance (440mOhm vs. 500mOhm), and increased power dissipation capability (1000W vs. 500W).

Parameter Comparison

Parameter IXFX21N100Q IXFX24N100Q3 Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 1000 1000 V
Continuous Drain Current (Id) @ 25°C 21 24 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) 500 @ 10.5A 440 @ 12A mOhm
Vgs(th) (Max) @ 4mA 5.5 6.5 V
Gate Charge (Qg Max) @ 10V 170 140 nC
Vgs (Max) ±20 ±30 V
Input Capacitance (Ciss Max) @ 25V 6900 7200 pF
Power Dissipation (Max) 500 1000 W (Tc)
Operating Temperature -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Series HiPerFET™, Q Class HiPerFET™, Q3 Class
Product Status Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IXFX21N100Q Primary Selection: The IXFX21N100Q is the specified part for applications requiring exactly 21A continuous drain current with 500W power dissipation. This device is Active in product status with full RoHS3 compliance and REACH unaffected designation. Use this part when design specifications call for the Q Class series characteristics and the stated thermal and current parameters.

IXFX24N100Q3 Substitute Selection: The IXFX24N100Q3 is a direct substitute when the IXFX21N100Q is unavailable or when application requirements benefit from enhanced performance margins. This part provides 24A continuous drain current (14% higher than the primary part), reduced on-state resistance of 440mOhm (12% lower), and doubled power dissipation capability at 1000W. The IXFX24N100Q3 is also Active in product status with identical RoHS3 and REACH compliance. The Q3 Class designation indicates an improved device generation within the HiPerFET™ series. Both parts share identical 1000V voltage rating, TO-247-3 package configuration, and operating temperature range, ensuring direct mechanical and electrical compatibility in circuit board layouts.

Selection between these parts depends on thermal management requirements and current headroom needs. The IXFX24N100Q3 is suitable for applications where higher current capacity or lower conduction losses provide system-level benefits.

Frequently Asked Questions (FAQ)

Q: Can the IXFX24N100Q3 be used as a direct replacement for the IXFX21N100Q in existing designs?

A: Yes. Both parts share identical drain-to-source voltage (1000V), package type (TO-247-3 PLUS247™-3), mounting configuration (through-hole), and operating temperature range (-55°C to 150°C). The IXFX24N100Q3 provides equal or superior electrical performance in all critical parameters. No circuit board layout modifications are required.

Q: What are the key differences between the IXFX21N100Q and IXFX24N100Q3?

A: The primary differences are: (1) Continuous drain current: 21A vs. 24A; (2) On-state resistance: 500mOhm vs. 440mOhm; (3) Power dissipation: 500W vs. 1000W; (4) Gate charge: 170nC vs. 140nC; (5) Series classification: Q Class vs. Q3 Class; (6) Maximum gate voltage: ±20V vs. ±30V. The IXFX24N100Q3 represents an enhanced device generation with improved thermal and switching characteristics.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXFX21N100Q and IXFX24N100Q3 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What is the significance of the Q Class versus Q3 Class designation?

A: Both parts belong to the IXYS HiPerFET™ series. The Q Class and Q3 Class designations indicate different device generations within this product family. The Q3 Class (IXFX24N100Q3) represents a more recent generation with improved performance characteristics, including lower on-state resistance and higher power dissipation capability.

Q: Does the IXFX24N100Q3 have different gate drive requirements?

A: The gate threshold voltage (Vgs(th)) differs slightly: 5.5V for the IXFX21N100Q versus 6.5V for the IXFX24N100Q3. Both operate with a 10V drive voltage for maximum on-state resistance specification. The IXFX24N100Q3 permits higher maximum gate voltage (±30V vs. ±20V), providing greater gate drive flexibility. Existing gate drive circuits designed for the IXFX21N100Q will function with the IXFX24N100Q3 without modification.

Q: What is the moisture sensitivity level for both parts?

A: Both the IXFX21N100Q and IXFX24N100Q3 have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity restrictions during storage, handling, or assembly processes.

Q: Are there inventory considerations when selecting between these parts?

A: The IXFX21N100Q has 1488 pieces in stock, while the IXFX24N100Q3 has 1940 pieces in stock. Both parts are available as new original inventory. Selection should be based on application requirements rather than inventory levels, as both parts are actively stocked.

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