IXFX20N80Q Equivalent & Substitute Parts

Part Overview

The IXFX20N80Q is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 20A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a PLUS247™-3 package variant of the TO-247-3 form factor. The IXFX20N80Q is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFX20N80Q
IXYSIn Stock: 1114IXFX20N80Q Datasheet
IXFX20N80Q
Current Part
IRFPC50APBF
Vishay SiliconixIn Stock: 2301IRFPC50APBF Datasheet
IRFPC50APBF
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 20 A (Tc)
Power Dissipation (Max) 360 W (Tc)
Rds On (Max) @ 10A, 10V 420 mOhm
Gate Charge (Qg) @ 10V 200 nC
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the IXFX20N80Q is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Parameters:

  • Drain-to-source voltage rating (Vdss) must equal or exceed the original specification
  • Continuous drain current (Id) must equal or exceed the original specification
  • On-state resistance (Rds On) must not exceed the original specification to maintain thermal performance
  • Gate charge (Qg) should be comparable to minimize switching losses
  • Operating temperature range must encompass the original range

Mechanical Parameters:

  • Package type must be TO-247-3 or compatible variant
  • Mounting type must be Through Hole
  • Pin configuration must be compatible with existing PCB layouts

The IRFPC50APBF is identified as a substitute part based on shared package compatibility and N-Channel MOSFET technology. However, electrical parameter deviations exist and must be evaluated for specific application requirements.

Parameter Comparison

Parameter IXFX20N80Q IRFPC50APBF Unit
Manufacturer IXYS Vishay Siliconix
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 600 V
Continuous Drain Current (Id) @ 25°C 20 11 A (Tc)
Rds On (Max) 420 @ 10A, 10V 580 @ 6A, 10V mOhm
Gate Charge (Qg) @ 10V 200 70 nC
Power Dissipation (Max) 360 180 W (Tc)
Vgs (Max) ±20 ±30 V
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-247-3 (PLUS247™-3) TO-247-3 (TO-247AC)
Mounting Type Through Hole Through Hole
Product Status Obsolete Active

Engineering Selection Recommendations

IXFX20N80Q Status: Obsolete. The IXFX20N80Q is no longer in active production. Continued sourcing is limited to existing inventory (1032 pcs reported in stock).

IRFPC50APBF Status: Active. The IRFPC50APBF is in active production with higher inventory availability (2225 pcs reported in stock) and carries ROHS3 compliance and REACH Unaffected status.

Substitution Feasibility: The IRFPC50APBF is mechanically compatible with the IXFX20N80Q through shared TO-247-3 package and Through Hole mounting. However, electrical parameter deviations exist:

  • Vdss is reduced from 800V to 600V
  • Continuous drain current is reduced from 20A to 11A
  • Power dissipation is reduced from 360W to 180W
  • Rds On is higher at 580mOhm versus 420mOhm

These reductions indicate the IRFPC50APBF is suitable only for applications where the lower voltage, current, and power ratings are acceptable. Applications requiring the full 800V rating or 20A current capability cannot use this substitute.

Compliance: The IRFPC50APBF provides superior compliance status with ROHS3 certification and REACH Unaffected designation, compared to the obsolete IXFX20N80Q.

Frequently Asked Questions (FAQ)

Q: Can the IRFPC50APBF directly replace the IXFX20N80Q in all applications?

A: No. While both devices share the TO-247-3 package and Through Hole mounting, the IRFPC50APBF has lower electrical ratings. The 600V Vdss rating is insufficient for applications requiring 800V operation. The 11A continuous drain current and 180W power dissipation are also reduced. Substitution is only valid for applications operating within the IRFPC50APBF electrical specifications.

Q: What are the key electrical differences between these parts?

A: The IXFX20N80Q provides 800V Vdss, 20A continuous drain current, and 360W power dissipation. The IRFPC50APBF provides 600V Vdss, 11A continuous drain current, and 180W power dissipation. The IRFPC50APBF also has higher on-state resistance (580mOhm versus 420mOhm) and lower gate charge (70nC versus 200nC).

Q: Are the packages physically compatible?

A: Yes. Both devices use TO-247-3 package variants with Through Hole mounting. The IXFX20N80Q uses PLUS247™-3 packaging, while the IRFPC50APBF uses TO-247AC packaging. Both are TO-247-3 form factors and share the same pin configuration and PCB footprint.

Q: What is the product status difference?

A: The IXFX20N80Q is obsolete and no longer manufactured. The IRFPC50APBF is in active production. For new designs or long-term production continuity, the active status of the IRFPC50APBF provides supply chain advantages.

Q: Does the IRFPC50APBF have better compliance certifications?

A: Yes. The IRFPC50APBF is ROHS3 compliant and REACH Unaffected. The IXFX20N80Q compliance status is not specified in the provided data.

Q: What applications are suitable for the IRFPC50APBF as a substitute?

A: The IRFPC50APBF is suitable for applications operating at 600V or below, requiring 11A or less continuous drain current, and dissipating 180W or less. Applications requiring higher voltage, current, or power ratings must use alternative parts rated for the full IXFX20N80Q specifications.

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