IXFX200N10P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX200N10P is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ Polar series. This device is rated for 100V drain-to-source voltage with a continuous drain current of 200A at 25°C and maximum power dissipation of 830W. The component features a Through Hole PLUS247™-3 package configuration and is currently in Active product status with 3020 pieces available in stock.

Equivalent and substitute parts are identified based on matching electrical specifications including drain-to-source voltage rating, gate drive voltage, operating temperature range, and package compatibility. Substitute components must maintain functional equivalence within the specified parameter tolerances to ensure reliable circuit operation.

Substiute Parts

IXFX200N10P

IXYSIn Stock: 3078IXFX200N10P Datasheet

Current PartRFQ

IRFP4310ZPBF

Infineon TechnologiesIn Stock: 16103IRFP4310ZPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFX200N10P are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Drain to Source Voltage (Vdss) rating of 100V to ensure safe operation within the same voltage class.

Gate Drive Voltage: Substitute parts must operate with a maximum Rds On drive voltage of 10V to maintain compatibility with existing gate drive circuits.

Operating Temperature Range: All substitute parts must support the full operating temperature range of -55°C to 175°C (TJ) to ensure functionality across all environmental conditions.

Package Configuration: Substitute parts must utilize Through Hole mounting with TO-247-3 compatible packaging to ensure mechanical and thermal compatibility with existing PCB layouts.

Regulatory Compliance: All substitute parts must maintain ROHS3 compliance and REACH Unaffected status to meet current environmental and regulatory requirements.

Current Rating Consideration: While the IXFX200N10P is rated for 200A continuous drain current, substitute parts with lower current ratings may be selected for applications where the full current capacity is not required, provided all other electrical parameters remain compatible.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (IXFX200N10P): The IXFX200N10P remains the primary component choice for applications requiring the full 200A continuous drain current specification. This device is Active in product status with 3020 pieces in stock, ensuring supply availability. The component meets ROHS3 compliance and REACH Unaffected requirements for current regulatory standards.

Substitute Selection (IRFP4310ZPBF): The IRFP4310ZPBF from Infineon Technologies serves as a functional substitute for applications where the continuous drain current requirement does not exceed 120A. This device maintains identical voltage rating (100V Vdss), gate drive voltage (10V), and operating temperature range (-55°C to 175°C). The IRFP4310ZPBF is also Active in product status with 16005 pieces in stock and meets ROHS3 compliance and REACH Unaffected requirements. The substitute exhibits lower gate charge (170 nC versus 235 nC) and reduced input capacitance, which may provide improved switching performance in gate drive circuits.

Compatibility Constraints: The IRFP4310ZPBF is suitable only for applications where the maximum continuous drain current does not exceed 120A. The reduced power dissipation rating (280W versus 830W) requires thermal design verification for high-power applications. Both devices utilize compatible TO-247-3 package configurations and Through Hole mounting, ensuring mechanical interchangeability on existing PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4310ZPBF replace the IXFX200N10P in all applications?

A: The IRFP4310ZPBF is a functional substitute only for applications where the continuous drain current does not exceed 120A. The primary difference is the current rating: IXFX200N10P is rated for 200A while IRFP4310ZPBF is rated for 120A. Both devices share identical voltage ratings (100V Vdss) and gate drive voltage (10V). Applications requiring the full 200A capability must use the IXFX200N10P.

Q: Are the packages physically compatible?

A: Yes. Both the IXFX200N10P (PLUS247™-3) and IRFP4310ZPBF (TO-247AC) utilize TO-247-3 compatible package configurations with Through Hole mounting. The devices are mechanically interchangeable on existing PCB layouts without modification.

Q: What are the key electrical differences between these devices?

A: The primary electrical differences are: (1) Continuous drain current: IXFX200N10P 200A versus IRFP4310ZPBF 120A; (2) Power dissipation: IXFX200N10P 830W versus IRFP4310ZPBF 280W; (3) Gate charge: IXFX200N10P 235 nC versus IRFP4310ZPBF 170 nC; (4) On-resistance: IXFX200N10P 7.5 mOhm @ 100A versus IRFP4310ZPBF 6 mOhm @ 75A. Both devices maintain identical voltage ratings and operating temperature ranges.

Q: Do both devices meet current regulatory requirements?

A: Yes. Both the IXFX200N10P and IRFP4310ZPBF are ROHS3 compliant and REACH Unaffected, meeting current environmental and regulatory standards.

Q: What is the gate charge significance when selecting between these devices?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The IRFP4310ZPBF has lower gate charge (170 nC versus 235 nC), which may result in faster switching transitions and reduced gate drive power requirements. This difference is relevant only when gate drive circuit performance is a design constraint.

Q: Are there inventory considerations for component selection?

A: The IXFX200N10P has 3020 pieces in stock while the IRFP4310ZPBF has 16005 pieces in stock. Both devices are in Active product status with established supply chains. Component selection should prioritize electrical compatibility with application requirements rather than inventory levels.