IXFX170N20T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX170N20T is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 170A continuous drain current at 25°C. This device is part of the HiPerFET™ Trench series and is housed in a PLUS247™-3 package for through-hole mounting applications. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications. Alternative devices enable procurement flexibility, extended supply availability, and design optimization within specified operating ranges.

Substiute Parts

IXFX170N20T

IXYSIn Stock: 823IXFX170N20T Datasheet

Current PartRFQ

IRFP4668PBF

Infineon TechnologiesIn Stock: 27355IRFP4668PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFX170N20T is determined by strict equivalence across the following critical parameters:

Voltage Rating Equivalence: The substitute part must maintain the same 200V drain-to-source voltage (Vdss) rating to ensure safe operation within the same circuit topology and voltage stress limits.

Current Capacity: The substitute part must support continuous drain current (Id) at or above the application requirement. The IXFX170N20T operates at 170A; substitute parts with lower current ratings require circuit re-evaluation.

On-Resistance (Rds On): The on-resistance directly affects power dissipation and thermal performance. Substitute parts with higher Rds On values increase heat generation and may require thermal management adjustments.

Package Compatibility: Both the IXFX170N20T (PLUS247™-3) and substitute parts must use compatible through-hole packages to ensure mechanical fit and PCB layout compatibility.

Thermal Performance: Power dissipation rating and operating temperature range must support the intended application thermal environment.

Compliance Status: All substitute parts must maintain equivalent RoHS3 compliance and regulatory status (REACH Unaffected, EAR99 classification).

The IRFP4668PBF meets these substitution criteria with equivalent voltage rating, compatible through-hole packaging, and active product status.

Parameter Comparison

Engineering Selection Recommendations

Primary Selection (IXFX170N20T): The IXFX170N20T is the specified component for applications requiring 170A continuous drain current at 200V. This device offers the highest power dissipation rating (1150W) and is recommended for high-current, high-power applications where thermal headroom is critical. Active production status and full RoHS3 compliance support long-term supply continuity.

Substitute Selection (IRFP4668PBF): The IRFP4668PBF is suitable for applications where continuous drain current requirements do not exceed 130A at 200V. This substitute provides equivalent voltage rating, compatible through-hole packaging, and active production status. The lower power dissipation rating (520W) and reduced input capacitance (10720 pF vs. 19600 pF) may benefit applications with lower thermal loads or faster switching requirements. Both devices maintain identical operating temperature ranges (-55°C to 175°C) and equivalent regulatory compliance.

Substitution Constraints: The IRFP4668PBF current rating (130A) is 23.5% lower than the IXFX170N20T (170A). Applications operating at or near 170A continuous current require the primary part. The IRFP4668PBF power dissipation rating (520W) is 54.8% lower than the primary part, indicating reduced thermal capacity. Circuit designs must account for these differences in current handling and thermal performance.

Compliance Verification: Both devices are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes. Both maintain unlimited moisture sensitivity (MSL 1), supporting standard storage and handling procedures.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4668PBF directly replace the IXFX170N20T in all applications?

A: Direct replacement is limited by current rating. The IRFP4668PBF supports 130A continuous drain current versus 170A for the IXFX170N20T. Applications operating below 130A at 200V can use the substitute. Applications requiring the full 170A rating must use the primary part.

Q: What are the package compatibility considerations?

A: The IXFX170N20T uses PLUS247™-3 packaging while the IRFP4668PBF uses TO-247AC packaging. Both are through-hole TO-247 variants with compatible pin configurations and mechanical footprints suitable for standard TO-247 PCB layouts. Pin assignment and lead spacing are equivalent.

Q: How do the on-resistance specifications compare?

A: The IXFX170N20T specifies 11 mOhm maximum on-resistance at 60A and 10V gate voltage. The IRFP4668PBF specifies 9.7 mOhm maximum at 81A and 10V gate voltage. The IRFP4668PBF exhibits lower on-resistance, resulting in reduced conduction losses at equivalent gate drive voltages.

Q: Are there thermal performance differences?

A: The IXFX170N20T is rated for 1150W maximum power dissipation while the IRFP4668PBF is rated for 520W. Applications with high continuous current and thermal stress require the primary part. The substitute is suitable for lower power applications or designs with adequate thermal management for reduced dissipation capacity.

Q: Do both devices support the same gate drive voltage?

A: Both devices specify 10V as the drive voltage for maximum on-resistance rating. The IXFX170N20T supports ±20V maximum gate voltage while the IRFP4668PBF supports ±30V maximum gate voltage. Both operate within standard gate drive specifications for N-Channel MOSFETs.

Q: What is the significance of gate charge differences?

A: The IXFX170N20T specifies 265 nC maximum gate charge at 10V while the IRFP4668PBF specifies 241 nC. Lower gate charge reduces gate drive power requirements and enables faster switching transitions. The IRFP4668PBF's lower gate charge may benefit high-frequency switching applications.

Q: Are both devices suitable for the same operating temperature range?

A: Both devices operate across -55°C to 175°C junction temperature range, supporting identical thermal operating windows. Temperature derating curves and thermal resistance specifications must be consulted for specific application environments.

Q: What compliance certifications apply to both devices?

A: Both the IXFX170N20T and IRFP4668PBF are RoHS3 compliant, REACH unaffected, and classified as EAR99 for export control. Both maintain unlimited moisture sensitivity (MSL 1), eliminating special storage or handling requirements.