IXFX15N100 N-Channel 1000V 15A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFX15N100 is an N-Channel 1000V 15A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a PLUS247™-3 package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 360W at the case temperature. Equivalent and substitute parts are selected based on matching or exceeding critical electrical parameters including drain-source voltage rating, continuous drain current, on-resistance characteristics, and through-hole mounting compatibility.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
Rds On (Max) @ Id, Vgs	700 mOhm @ 7.5A, 10V	Ohm
Gate Threshold Voltage (Vgs(th)) @ Id	4.5	V @ 4mA
Gate Charge (Qg) @ Vgs	220	nC @ 10V
Input Capacitance (Ciss) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3 Variant	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IXFX15N100 are selected based on the following critical parameters that determine functional equivalence:

Primary Selection Criteria:

Drain-Source Voltage (Vdss): Minimum 1000V to maintain voltage rating compatibility
Continuous Drain Current (Id): Minimum 15A to support current requirements
On-Resistance (Rds On): Maximum 700 mOhm at specified gate voltage to ensure thermal performance
Mounting Type: Through Hole configuration for PCB compatibility
Package: TO-247-3 or compatible variants

Substitution Logic: Parts are grouped into two categories: direct equivalents and similar alternatives. Direct equivalents maintain identical or superior electrical specifications within the same voltage and current class. Similar alternatives provide functional substitution with variations in specific parameters such as gate charge, input capacitance, or power dissipation, provided core voltage and current ratings are met or exceeded.

The IXFH15N100Q3 represents a direct equivalent from the same manufacturer with improved specifications. The APT18M100B and STW13NK100Z provide similar functionality with higher current ratings or alternative technology platforms. The STW12N120K5 and SCT10N120 offer higher voltage ratings with reduced current capacity, suitable for applications where voltage margin is prioritized.

Parameter Comparison

Parameter	IXFX15N100	IXFH15N100Q3	APT18M100B	STW13NK100Z	STW12N120K5	SCT10N120
Manufacturer	IXYS	IXYS	Microchip Technology	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	1000	1000	1000	1000	1200	1200
Id @ 25°C (A)	15	15	18	13	12	12
Rds On (Max) (mOhm)	700 @ 7.5A, 10V	1050 @ 7.5A, 10V	700 @ 9A, 10V	700 @ 6.5A, 10V	690 @ 6A, 10V	690 @ 6A, 20V
Vgs(th) (V)	4.5 @ 4mA	6.5 @ 4mA	5 @ 1mA	4.5 @ 150µA	5 @ 100µA	3.5 @ 250µA
Qg (nC)	220 @ 10V	64 @ 10V	150 @ 10V	266 @ 10V	44.2 @ 10V	22 @ 20V
Ciss (pF)	4500 @ 25V	3250 @ 25V	4845 @ 25V	6000 @ 25V	1370 @ 100V	290 @ 400V
Power Dissipation (W)	360	690	625	350	250	150
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 200
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package	PLUS247™-3	TO-247AD (IXFH)	TO-247 [B]	TO-247-3	TO-247-3	HiP247™
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH15N100Q3 (IXYS) — Direct Equivalent This part is the recommended primary substitute. It maintains identical voltage and current ratings while offering superior power dissipation capability (690W versus 360W). The device is manufactured by the same supplier, ensuring design continuity and compatibility with existing thermal management strategies. Active product status and ROHS3 compliance support long-term availability and regulatory alignment. The higher gate charge (64 nC) and lower input capacitance (3250 pF) provide improved switching characteristics compared to the original part.

APT18M100B (Microchip Technology) — Similar Alternative This part provides a higher current rating (18A) at the same 1000V voltage class, offering design margin for current-limited applications. The on-resistance specification (700 mOhm @ 9A, 10V) matches the original part's performance. Active product status and ROHS3 compliance ensure supply chain continuity. The TO-247 [B] package is mechanically compatible with TO-247-3 footprints. This option is suitable for applications requiring current headroom.

STW13NK100Z (STMicroelectronics) — Similar Alternative This part operates at the same 1000V rating with 13A continuous current, providing a close match to the original specification. The SuperMESH™ technology platform delivers equivalent on-resistance (700 mOhm @ 6.5A, 10V) with active product status and ROHS3 compliance. The higher gate charge (266 nC) and input capacitance (6000 pF) require gate driver evaluation for switching frequency compatibility.

STW12N120K5 (STMicroelectronics) — Higher Voltage Alternative This part offers elevated voltage rating (1200V) with reduced current capacity (12A). The MDmesh™ K5 technology provides superior gate charge characteristics (44.2 nC) and lower input capacitance (1370 pF), enabling faster switching operation. This option is appropriate for applications where voltage margin is critical and current requirements do not exceed 12A.

SCT10N120 (STMicroelectronics) — Silicon Carbide Alternative This SiCFET device operates at 1200V with 12A rating and represents a fundamentally different technology platform. The silicon carbide construction delivers significantly lower gate charge (22 nC) and minimal input capacitance (290 pF), enabling high-frequency switching applications. Extended operating temperature range (-55°C to 200°C) supports thermal-demanding environments. This option requires gate driver compatibility verification due to different switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IXFH15N100Q3 be used as a direct replacement for the IXFX15N100?

A: Yes. The IXFH15N100Q3 maintains identical voltage (1000V) and current (15A) ratings with superior power dissipation (690W versus 360W). Both devices are N-Channel MOSFETs from IXYS in the HiPerFET™ series with through-hole mounting. The primary difference is the package variant (TO-247AD versus PLUS247™-3), which are mechanically compatible on standard TO-247-3 footprints. Gate threshold voltage and gate charge specifications differ slightly, requiring verification of gate driver compatibility in switching-sensitive applications.

Q: What is the difference between the IXFX15N100 and the APT18M100B?

A: Both devices operate at 1000V with similar on-resistance specifications (700 mOhm). The APT18M100B provides higher continuous drain current (18A versus 15A), offering additional current margin. The APT18M100B is manufactured by Microchip Technology and uses the TO-247 [B] package, which is mechanically compatible with TO-247-3 footprints. The higher current rating makes this part suitable for applications requiring current headroom while maintaining the same voltage class.

Q: Why would I select the STW12N120K5 over the IXFH15N100Q3?

A: The STW12N120K5 is selected when applications require higher voltage margin (1200V versus 1000V) or when switching frequency is a critical design parameter. The MDmesh™ K5 technology delivers significantly lower gate charge (44.2 nC versus 64 nC) and input capacitance (1370 pF versus 3250 pF), enabling faster switching transitions and reduced gate driver power dissipation. This selection is appropriate for high-frequency power conversion circuits where the 12A current rating is sufficient.

Q: Is the SCT10N120 a suitable replacement for the IXFX15N100?

A: The SCT10N120 is a functional alternative only in applications where silicon carbide technology benefits are required. This SiCFET device operates at 1200V with 12A rating and delivers exceptional switching performance (22 nC gate charge, 290 pF input capacitance). However, silicon carbide devices exhibit different switching characteristics, gate drive requirements, and thermal behavior compared to silicon MOSFETs. Gate driver compatibility and circuit-level testing are necessary before implementation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed (IXFH15N100Q3, APT18M100B, STW13NK100Z, STW12N120K5, and SCT10N120) are ROHS3 compliant. The original IXFX15N100 does not specify RoHS status due to its obsolete classification. RoHS3 compliance ensures regulatory alignment for new designs and supports environmental standards across manufacturing regions.

Q: What package compatibility considerations apply to these substitutes?

A: All substitute parts use through-hole TO-247-3 or compatible variants (TO-247AD, TO-247 [B], HiP247™). These packages are mechanically and electrically compatible on standard TO-247-3 PCB footprints. Pin assignments follow industry-standard conventions (Gate, Drain, Source). Physical dimensions may vary slightly between package variants, requiring verification of heatsink mounting clearance and thermal interface material compatibility in high-power applications.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the device and influences gate driver selection. The IXFX15N100 requires 220 nC at 10V, while substitutes range from 22 nC (SCT10N120) to 266 nC (STW13NK100Z). Higher gate charge increases gate driver power dissipation and may limit switching frequency in high-frequency applications. Lower gate charge reduces driver requirements and enables faster switching. Gate driver current capability and voltage supply must be verified for each substitute to ensure reliable switching performance.

Q: What thermal considerations apply when substituting these parts?

A: Power dissipation ratings vary significantly: IXFX15N100 (360W), IXFH15N100Q3 (690W), APT18M100B (625W), STW13NK100Z (350W), STW12N120K5 (250W), and SCT10N120 (150W). Higher power dissipation requires enhanced heatsinking and thermal management. Lower power dissipation may allow simplified thermal design. On-resistance specifications at different current levels must be evaluated against actual circuit operating conditions to determine junction temperature and verify thermal margin. Heatsink mounting interfaces and thermal interface materials require compatibility verification for each substitute.

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