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IXFX150N30P3 Equivalent & Substitute Parts
Part Overview
The IXFX150N30P3 is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage and 150A continuous drain current at 25°C. This device belongs to the HiPerFET™ and Polar3™ series and is housed in a PLUS247™-3 package variant of TO-247-3. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.
Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining through-hole mounting compatibility and thermal management requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 300 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 19 | mOhm @ 75A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 197 | nC @ 10V |
| Power Dissipation (Max) | 1300 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | - |
| Package / Case | TO-247-3 | - |
Substitute Part Grouping Explanation
Substitution eligibility for the IXFX150N30P3 is determined by the following critical parameters:
Voltage Rating Compatibility: The substitute part must support the application voltage requirement. The IXFX150N30P3 operates at 300V Vdss. Substitute parts with lower voltage ratings (such as 250V) are suitable only for applications where the maximum system voltage does not exceed the substitute's Vdss rating.
Current Capacity: The IXFX150N30P3 delivers 150A continuous drain current. Substitute parts with reduced current ratings require circuit redesign or parallel device configurations to maintain equivalent current handling.
On-State Resistance (Rds On): The IXFX150N30P3 exhibits 19 mOhm maximum at 75A and 10V gate drive. Substitute parts with comparable or lower Rds On values maintain thermal performance and power dissipation characteristics.
Gate Charge (Qg): The IXFX150N30P3 specifies 197 nC maximum gate charge at 10V. Substitute parts with similar or lower gate charge values ensure compatible gate drive circuit performance.
Thermal Capability: The IXFX150N30P3 dissipates 1300W maximum at case temperature. Substitute parts with lower power dissipation ratings require thermal management verification for high-power applications.
Package and Mounting: Both the main part and substitutes must use through-hole mounting in TO-247-3 compatible packages to ensure mechanical and thermal interface compatibility.
Compliance Status: All substitute parts must maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1) to satisfy regulatory and manufacturing requirements.
Parameter Comparison
| Parameter | IXFX150N30P3 | IRFP4768PBF | Unit |
|---|---|---|---|
| Manufacturer | IXYS | Infineon Technologies | - |
| FET Type | N-Channel | N-Channel | - |
| Drain to Source Voltage (Vdss) | 300 | 250 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | 93 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Rds On (Max) @ Id, Vgs | 19 @ 75A, 10V | 17.5 @ 56A, 10V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 197 @ 10V | 270 @ 10V | nC |
| Power Dissipation (Max) | 1300 | 520 | W (Tc) |
| Operating Temperature Range | -55 to 150 | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 (PLUS247™-3) | TO-247-3 (TO-247AC) | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | - |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | - |
| Product Status | Active | Active | - |
Engineering Selection Recommendations
IRFP4768PBF Substitution Criteria:
The IRFP4768PBF is an Active product from Infineon Technologies with full RoHS3 compliance and MSL 1 rating, matching the regulatory and environmental requirements of the IXFX150N30P3.
Voltage Derating: The IRFP4768PBF operates at 250V Vdss, which is 50V lower than the IXFX150N30P3. This device is suitable for applications where the maximum system voltage does not exceed 250V. For systems designed for 300V operation, the IRFP4768PBF cannot serve as a direct substitute without circuit redesign.
Current Capacity Limitation: The IRFP4768PBF delivers 93A continuous drain current, compared to 150A for the IXFX150N30P3. Applications requiring 150A operation cannot use this substitute without parallel device configuration or circuit modification.
On-State Resistance: The IRFP4768PBF exhibits 17.5 mOhm at 56A and 10V, which is lower than the IXFX150N30P3 specification of 19 mOhm at 75A and 10V. This indicates improved conduction efficiency at the substitute's rated current level.
Gate Charge: The IRFP4768PBF specifies 270 nC gate charge at 10V, which is 73 nC higher than the IXFX150N30P3. Gate drive circuits must accommodate this increased charge requirement.
Thermal Performance: The IRFP4768PBF dissipates 520W maximum at case temperature, which is 780W lower than the IXFX150N30P3. High-power applications requiring 1300W dissipation cannot use this substitute.
Temperature Range: The IRFP4768PBF supports -55°C to 175°C operation, extending the upper temperature limit by 25°C compared to the IXFX150N30P3 (-55°C to 150°C).
Package Compatibility: Both devices use TO-247-3 through-hole packages and are mechanically compatible for PCB mounting and thermal interface applications.
Frequently Asked Questions (FAQ)
Q: Can the IRFP4768PBF replace the IXFX150N30P3 in a 300V application?
A: No. The IRFP4768PBF is rated for 250V maximum Vdss. Applications operating at 300V exceed this device's voltage rating and require the IXFX150N30P3 or an equivalent 300V-rated device.
Q: What is the impact of the IRFP4768PBF's lower current rating (93A vs. 150A)?
A: The IRFP4768PBF cannot deliver 150A continuous current. Applications requiring 150A operation must use the IXFX150N30P3 or parallel multiple IRFP4768PBF devices with appropriate current-sharing circuitry.
Q: How does the higher gate charge of the IRFP4768PBF affect circuit design?
A: The IRFP4768PBF requires 270 nC gate charge compared to 197 nC for the IXFX150N30P3. Gate drive circuits must supply sufficient charge capacity and current to meet this requirement within acceptable switching time parameters.
Q: Are both devices mechanically compatible in TO-247-3 packages?
A: Yes. Both the IXFX150N30P3 (PLUS247™-3) and IRFP4768PBF (TO-247AC) use TO-247-3 package variants and are mechanically compatible for through-hole PCB mounting and thermal interface applications.
Q: What compliance certifications apply to both devices?
A: Both the IXFX150N30P3 and IRFP4768PBF are RoHS3 compliant with MSL 1 (unlimited moisture sensitivity) rating. Both devices are REACH unaffected and classified under ECCN EAR99.
Q: Can the IRFP4768PBF be used in applications requiring 1300W power dissipation?
A: No. The IRFP4768PBF dissipates 520W maximum at case temperature, which is insufficient for applications requiring 1300W dissipation. The IXFX150N30P3 must be used for high-power applications.
Q: What is the operating temperature advantage of the IRFP4768PBF?
A: The IRFP4768PBF supports junction temperatures up to 175°C, compared to 150°C for the IXFX150N30P3. This provides a 25°C higher temperature margin for applications operating in elevated thermal environments.
Q: Are there inventory considerations when selecting between these devices?
A: The IXFX150N30P3 has 1495 pieces in stock, while the IRFP4768PBF has 33679 pieces available. Availability may influence selection for high-volume production requirements.
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