IXFX14N100 Equivalent & Substitute Parts

Part Overview

The IXFX14N100 is an N-Channel 1000 V, 14 A (Tc) MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a PLUS247™-3 package. This device is rated for 360 W (Tc) power dissipation and operates across a temperature range of -55°C to 150°C (TJ). The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing system support, design updates, and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	14	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	750 mOhm @ 500 mA, 10 V	Ohm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5	V @ 4 mA
Gate Charge (Qg) (Max) @ Vgs	220	nC @ 10 V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3 Variant (PLUS247™-3)	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IXFX14N100 is determined by alignment across the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): Substitute parts must maintain the 1000 V drain-to-source voltage specification or exceed it. Parts rated below 1000 V are not suitable.

Current Rating (Id): Substitute parts must support a continuous drain current of 14 A or greater at 25°C to ensure equivalent or superior current-handling capability.

Drive Voltage and On-Resistance (Rds On): Substitute parts must operate at 10 V gate drive voltage with on-resistance characteristics compatible with the application's switching and thermal requirements.

Gate Threshold Voltage (Vgs(th)): Substitute parts must maintain gate threshold voltage specifications within acceptable ranges to ensure proper gate drive compatibility.

Package and Mounting: Substitute parts must be housed in through-hole packages compatible with TO-247-3 footprints or equivalent mechanical form factors.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C (TJ) operating temperature range.

Product Status and Compliance: Active product status and RoHS3 compliance are preferred for long-term availability and regulatory adherence.

Parameter Comparison

Parameter	IXFX14N100	IXFH15N100Q3	STW13NK100Z	STWA12N120K5
Manufacturer	IXYS	IXYS	STMicroelectronics	STMicroelectronics
Drain to Source Voltage (Vdss)	1000 V	1000 V	1000 V	1200 V
Continuous Drain Current (Id) @ 25°C	14 A (Tc)	15 A (Tc)	13 A (Tc)	12 A (Tc)
Drive Voltage (Max Rds On)	10 V	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	750 mOhm @ 500 mA, 10 V	1.05 Ohm @ 7.5 A, 10 V	700 mOhm @ 6.5 A, 10 V	690 mOhm @ 6 A, 10 V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4.5 V @ 4 mA	6.5 V @ 4 mA	4.5 V @ 150 µA	5 V @ 100 µA
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 10 V	64 nC @ 10 V	266 nC @ 10 V	44.2 nC @ 10 V
Vgs (Max)	±20 V	±30 V	±30 V	±30 V
Input Capacitance (Ciss) (Max) @ Vds	4500 pF @ 25 V	3250 pF @ 25 V	6000 pF @ 25 V	1370 pF @ 100 V
Power Dissipation (Max)	360 W (Tc)	690 W (Tc)	350 W (Tc)	250 W (Tc)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Package Type	TO-247-3 Variant (PLUS247™-3)	TO-247AD (IXFH)	TO-247-3	TO-247 Long Leads
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH15N100Q3 (Direct IXYS Equivalent)

The IXFH15N100Q3 is the primary substitute for the IXFX14N100. Both devices are manufactured by IXYS within the HiPerFET™ series and share identical voltage ratings (1000 V Vdss) and operating temperature ranges (-55°C to 150°C TJ). The IXFH15N100Q3 provides superior current capability (15 A vs. 14 A) and significantly higher power dissipation (690 W vs. 360 W), making it suitable for applications requiring equivalent or enhanced performance. The device is classified as Active with ROHS3 compliance, ensuring long-term availability and regulatory adherence. Package compatibility is maintained through TO-247-3 form factor equivalence.

STW13NK100Z (STMicroelectronics SuperMESH™ Alternative)

The STW13NK100Z offers a near-equivalent substitute with matching 1000 V Vdss rating and comparable current handling (13 A vs. 14 A). This device is manufactured by STMicroelectronics using SuperMESH™ technology and maintains the same operating temperature range. On-resistance characteristics (700 mOhm @ 6.5 A, 10 V) are closely aligned with the original part. The device is Active with ROHS3 compliance and is housed in a standard TO-247-3 package. This option is suitable for applications where STMicroelectronics component qualification is acceptable.

STWA12N120K5 (Higher Voltage Alternative)

The STWA12N120K5 represents a higher-voltage option (1200 V Vdss) from STMicroelectronics using MDmesh™ K5 technology. While current rating is reduced (12 A vs. 14 A), the elevated voltage rating provides design margin for applications subject to transient overvoltage conditions. On-resistance (690 mOhm @ 6 A, 10 V) and gate charge characteristics (44.2 nC @ 10 V) are favorable. The device is Active with ROHS3 compliance. Selection of this part requires confirmation that the higher voltage rating does not introduce unintended circuit behavior or cost implications.

Frequently Asked Questions (FAQ)

Q: Can the IXFH15N100Q3 be used as a direct replacement for the IXFX14N100?

A: Yes. Both devices share identical 1000 V Vdss ratings, operate across -55°C to 150°C (TJ), and are housed in compatible TO-247-3 packages. The IXFH15N100Q3 provides higher current (15 A vs. 14 A) and power dissipation (690 W vs. 360 W) ratings, making it suitable for direct substitution. Both are IXYS HiPerFET™ series devices.

Q: What is the primary difference between the IXFH15N100Q3 and STW13NK100Z?

A: Both devices maintain 1000 V Vdss and comparable current ratings (15 A and 13 A respectively). The key differences are manufacturer (IXYS vs. STMicroelectronics), technology platform (HiPerFET™ vs. SuperMESH™), and gate charge characteristics (64 nC vs. 266 nC @ 10 V). Selection depends on component qualification requirements and technology preference within the design organization.

Q: Why is the STWA12N120K5 rated at 1200 V instead of 1000 V?

A: The STWA12N120K5 is designed for higher-voltage applications. The elevated 1200 V Vdss rating provides additional margin against transient overvoltage events. This part is suitable only if the application circuit can accommodate the higher voltage rating without introducing unintended behavior or if overvoltage protection is a design requirement.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFH15N100Q3, STW13NK100Z, and STWA12N120K5 are all ROHS3 compliant. The original IXFX14N100 RoHS status is not specified in the provided data.

Q: What is the significance of gate charge (Qg) differences among these parts?

A: Gate charge affects gate drive circuit design and switching speed. The IXFH15N100Q3 has the lowest gate charge (64 nC @ 10 V), enabling faster switching and reduced gate drive power. The STW13NK100Z has higher gate charge (266 nC @ 10 V), similar to the original part (220 nC @ 10 V). The STWA12N120K5 has the lowest gate charge (44.2 nC @ 10 V). Gate drive circuit compatibility must be verified during design integration.

Q: Can these parts be used interchangeably in existing PCB layouts?

A: All substitute parts are housed in TO-247-3 or equivalent through-hole packages compatible with standard TO-247-3 footprints. Physical pin compatibility is maintained. However, gate drive circuit parameters, thermal management requirements, and application-specific performance criteria must be evaluated before final selection.

Q: What inventory status should influence part selection?

A: The IXFX14N100 is obsolete with 955 pieces in stock. The IXFH15N100Q3 (1385 pieces), STW13NK100Z (5059 pieces), and STWA12N120K5 (1001 pieces) are all active products with established supply chains. For new designs or long-term production, selection of active products ensures sustained availability and supply chain stability.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message