IXFX120N30T Equivalent & Substitute Parts

Part Overview

The IXFX120N30T is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage with 120A continuous drain current at 25°C. This device is packaged in the PLUS247™-3 through-hole format and is designed for high-power switching applications requiring robust thermal performance up to 960W at the case temperature. The part is currently in active production status with extensive inventory availability.

Substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible through-hole packaging. Substitutes must maintain functional equivalence within the specified operating envelope.

Substiute Parts

IXFX120N30T
IXYSIn Stock: 86787IXFX120N30T Datasheet
IXFX120N30T
Current Part
IRFP4332PBF
Infineon TechnologiesIn Stock: 19106IRFP4332PBF Datasheet
IRFP4332PBF
Similar
IRFP4868PBF
Infineon TechnologiesIn Stock: 54628IRFP4868PBF Datasheet
IRFP4868PBF
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 120 A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 60A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10V
Power Dissipation (Max) 960 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 Variant -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitute parts for the IXFX120N30T are selected based on the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 300V or higher
  • Continuous Drain Current (Id): Capability to handle 120A or greater at 25°C
  • On-State Resistance (Rds On): Performance at or below the specified maximum
  • Gate Charge (Qg): Switching characteristics within acceptable range
  • Mounting Type: Through-hole configuration
  • Package Compatibility: TO-247-3 or equivalent footprint

Substitution Logic: The IRFP4868PBF maintains identical 300V Vdss rating with 70A continuous drain current and 517W power dissipation. While the current rating is lower than the main part, the voltage class equivalence and compatible through-hole packaging establish it as a direct substitute for applications not requiring the full 120A capability.

The IRFP4332PBF operates at 250V Vdss with 57A continuous drain current. This part is suitable for applications where the voltage requirement does not exceed 250V, providing a lower-rated alternative with reduced on-state resistance at its rated current.

Parameter Comparison

Parameter IXFX120N30T IRFP4868PBF IRFP4332PBF
Manufacturer IXYS Infineon Technologies Infineon Technologies
Drain to Source Voltage (Vdss) 300 V 300 V 250 V
Current - Continuous Drain (Id) @ 25°C 120 A (Tc) 70 A (Tc) 57 A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 60A, 10V 32 mOhm @ 42A, 10V 33 mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10V 270 nC @ 10V 150 nC @ 10V
Power Dissipation (Max) 960 W (Tc) 517 W (Tc) 360 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ) -55 to 175 °C (TJ) -40 to 175 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 TO-247-3
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Not For New Designs Active

Engineering Selection Recommendations

IRFP4868PBF Selection Criteria: The IRFP4868PBF shares the 300V Vdss rating with the IXFX120N30T and maintains compatible through-hole TO-247-3 packaging. This part is suitable for designs where continuous drain current requirements do not exceed 70A. The product status is listed as "Not For New Designs," indicating this part is in mature production phase. All regulatory compliance certifications (ROHS3, REACH Unaffected) are equivalent to the main part. The extended operating temperature range to 175°C provides additional thermal margin compared to the IXFX120N30T.

IRFP4332PBF Selection Criteria: The IRFP4332PBF is appropriate for applications operating at 250V or lower drain-to-source voltage with continuous drain current requirements not exceeding 57A. This part maintains active product status and full regulatory compliance. The lower gate charge (150 nC) compared to the main part results in reduced switching losses. The extended operating temperature range to 175°C and lower minimum operating temperature of -40°C provide operational flexibility. This substitute is suitable for cost-optimized designs where voltage and current requirements are within its ratings.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4868PBF directly replace the IXFX120N30T in all applications?

A: The IRFP4868PBF is suitable for applications where the continuous drain current requirement does not exceed 70A. Both parts share the 300V Vdss rating and compatible TO-247-3 through-hole packaging. Applications requiring the full 120A capability of the IXFX120N30T cannot use the IRFP4868PBF as a direct substitute.

Q: What is the voltage limitation when using the IRFP4332PBF?

A: The IRFP4332PBF is rated for 250V maximum drain-to-source voltage. It cannot be used in applications requiring 300V operation. This part is suitable only for circuits designed for 250V or lower voltage operation.

Q: Are all three parts compatible with the same PCB footprint?

A: All three parts use through-hole TO-247-3 packaging and share compatible pin configurations. PCB footprints designed for the IXFX120N30T will accommodate the IRFP4868PBF and IRFP4332PBF without modification.

Q: What is the significance of the "Not For New Designs" status on the IRFP4868PBF?

A: This status indicates the IRFP4868PBF is in mature production phase and available for existing designs and legacy applications. New designs should prioritize parts with "Active" status, such as the IRFP4332PBF or the original IXFX120N30T.

Q: How do the on-state resistance characteristics compare between these parts?

A: The IXFX120N30T exhibits 24 mOhm at 60A and 10V gate-source voltage. The IRFP4868PBF shows 32 mOhm at 42A and 10V, while the IRFP4332PBF shows 33 mOhm at 35A and 10V. On-state resistance values are specified at different current levels due to device rating differences. Direct comparison requires evaluation at equivalent operating points within each device's rated range.

Q: What are the gate charge implications for circuit design?

A: The IXFX120N30T and IRFP4868PBF have similar gate charge specifications (265 nC and 270 nC respectively at 10V), indicating comparable switching speed characteristics. The IRFP4332PBF has significantly lower gate charge (150 nC), resulting in faster switching transitions and reduced driver power requirements.

Q: Are there temperature range considerations for substitution?

A: The IXFX120N30T operates from -55°C to 150°C junction temperature. Both substitute parts extend the upper operating limit to 175°C. The IRFP4332PBF has a higher minimum operating temperature of -40°C compared to -55°C for the other two parts. Applications requiring operation below -40°C must use the IXFX120N30T or IRFP4868PBF.

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