IXFV96N15P N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV96N15P is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage with 96A continuous drain current at 25°C. This device is part of the PolarHT™ HiPerFET™ series and is housed in a TO-220-3 through-hole package. The IXFV96N15P is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFV96N15P
IXYSIn Stock: 1022IXFV96N15P Datasheet
IXFV96N15P
Current Part
IPP200N15N3GXKSA1
Infineon TechnologiesIn Stock: 3248IPP200N15N3GXKSA1 Datasheet
IPP200N15N3GXKSA1
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 96 A
Power Dissipation (Max) 480 W
On-State Resistance (Rds On Max) @ 10V 24 mOhm
Gate Threshold Voltage (Vgs(th) Max) 5 V @ 4mA
Gate Charge (Qg Max) @ 10V 110 nC
Input Capacitance (Ciss Max) @ 25V 3500 pF
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3, Short Tab Through Hole
Gate Voltage (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the IXFV96N15P is determined by strict equivalence across the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: The substitute part must maintain the same 150V Vdss rating to ensure compatibility within the same circuit topology and voltage stress conditions.

Package Compatibility: The substitute must use the TO-220-3 through-hole package to maintain mechanical fit and thermal interface characteristics with existing PCB designs and heat sink assemblies.

Functional Current Capability: While the IXFV96N15P delivers 96A continuous drain current, substitute parts with lower current ratings (such as 50A) remain functionally valid for applications where the full 96A capability is not required. The substitute must support the application's actual current demand.

On-State Resistance: The Rds On specification directly impacts power dissipation and thermal performance. Substitute parts with comparable or lower Rds On values maintain or improve efficiency characteristics.

Gate Drive Compatibility: The substitute must operate within the same gate voltage range (±20V) and accept standard 10V drive signals to ensure compatibility with existing gate driver circuits.

Temperature Range: The substitute must support the full -55°C to 175°C operating range to maintain reliability across all environmental conditions.

Parameter Comparison

Parameter IXFV96N15P (Main Part) IPP200N15N3GXKSA1 (Substitute) Unit
Manufacturer IXYS Infineon Technologies
Drain-to-Source Voltage (Vdss) 150 150 V
Continuous Drain Current (Id) @ 25°C 96 50 A
Power Dissipation (Max) 480 150 W
On-State Resistance (Rds On Max) @ 10V 24 20 mOhm
Gate Threshold Voltage (Vgs(th) Max) 5 4 V @ specified Id
Gate Charge (Qg Max) @ 10V 110 31 nC
Input Capacitance (Ciss Max) 3500 @ 25V 1820 @ 75V pF
Operating Temperature Range -55 to 175 -55 to 175 °C
Gate Voltage (Max) ±20 ±20 V
Package Type TO-220-3, Short Tab TO-220-3 Through Hole
Product Status Obsolete Active
RoHS Status Not specified ROHS3 Compliant

Engineering Selection Recommendations

Product Status Consideration: The IXFV96N15P is classified as obsolete, while the IPP200N15N3GXKSA1 maintains active product status with ongoing manufacturer support. Selection of the active substitute part ensures access to technical documentation, quality assurance, and supply chain continuity.

Compliance and Certification: The IPP200N15N3GXKSA1 carries ROHS3 compliance certification, meeting current environmental and regulatory requirements. Both parts maintain REACH Unaffected status and EAR99 export classification.

Current Rating Differential: The substitute part delivers 50A continuous drain current compared to the main part's 96A rating. Selection of the IPP200N15N3GXKSA1 is appropriate for applications requiring up to 50A. Applications demanding the full 96A capability require alternative substitute parts with higher current ratings.

Electrical Performance: The IPP200N15N3GXKSA1 exhibits lower on-state resistance (20 mOhm versus 24 mOhm) and significantly lower gate charge (31 nC versus 110 nC), resulting in improved switching efficiency and reduced gate driver power requirements.

Thermal Characteristics: The substitute part is rated for 150W maximum power dissipation compared to the main part's 480W. Thermal design verification is required to confirm the substitute part's dissipation capability matches the application's actual power loss profile.

Package Compatibility: Both parts use TO-220-3 through-hole packages, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heat sink assemblies.

Frequently Asked Questions (FAQ)

Q: Can the IPP200N15N3GXKSA1 directly replace the IXFV96N15P in all applications?

A: Direct replacement is valid only for applications where the continuous drain current requirement does not exceed 50A. The 150V voltage rating, ±20V gate voltage range, and TO-220-3 package ensure electrical and mechanical compatibility. Applications requiring the full 96A capability of the original part require alternative substitute parts with higher current ratings.

Q: What is the significance of the lower gate charge in the substitute part?

A: The IPP200N15N3GXKSA1 requires 31 nC of gate charge compared to 110 nC for the IXFV96N15P. Lower gate charge reduces the energy required to drive the gate, decreasing gate driver power dissipation and enabling faster switching transitions. Existing gate driver circuits designed for the original part will operate with improved efficiency margins.

Q: Are there thermal management differences between these parts?

A: The IPP200N15N3GXKSA1 is rated for 150W maximum power dissipation versus 480W for the IXFV96N15P. Both parts use the same TO-220-3 package with identical thermal interface characteristics. Thermal performance depends on the application's actual power loss, which is determined by drain current, on-state resistance, and switching frequency. Applications operating below 50A will experience lower absolute power dissipation with the substitute part due to its lower on-state resistance.

Q: Does the lower input capacitance of the substitute part affect circuit design?

A: The IPP200N15N3GXKSA1 exhibits 1820 pF input capacitance (measured at 75V) compared to 3500 pF for the IXFV96N15P (measured at 25V). Lower input capacitance reduces the capacitive load on gate driver circuits, enabling faster switching and reducing gate driver stress. Existing gate driver designs will operate with improved performance margins.

Q: What compliance advantages does the substitute part offer?

A: The IPP200N15N3GXKSA1 carries ROHS3 compliance certification, meeting current environmental regulations for new product designs and procurement. The obsolete status of the IXFV96N15P creates long-term supply and compliance risks for new applications.

Q: Are the package dimensions identical between these parts?

A: Both parts use TO-220-3 through-hole packages. The IXFV96N15P specifies a short tab variant, while the IPP200N15N3GXKSA1 uses the standard TO-220-3 configuration. Physical dimensions and mounting hole spacing are compatible. Verification of tab length and heat sink interface geometry is recommended for applications with tight mechanical constraints.

Q: What is the impact of the lower gate threshold voltage in the substitute part?

A: The IPP200N15N3GXKSA1 has a gate threshold voltage of 4V compared to 5V for the IXFV96N15P. The lower threshold voltage indicates faster turn-on response at lower gate drive voltages. Standard 10V gate drive signals provide adequate overdrive margin for both parts. This difference does not affect compatibility with existing gate driver circuits.

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