IXFV36N50PS Equivalent & Substitute Parts

Part Overview

The IXFV36N50PS is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 36A continuous drain current. This device is packaged in the PLUS-220SMD surface mount configuration and is part of the HiPerFET™ and PolarP2™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal performance while accommodating different packaging formats.

Substiute Parts

IXFV36N50PS
IXYSIn Stock: 856IXFV36N50PS Datasheet
IXFV36N50PS
Current Part
APT37F50B
Microchip TechnologyIn Stock: 701APT37F50B Datasheet
APT37F50B
Similar
SPB21N50C3ATMA1
Infineon TechnologiesIn Stock: 3831SPB21N50C3ATMA1 Datasheet
SPB21N50C3ATMA1
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 36 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 170 mOhm
Gate Charge (Qg) @ 10V 93 nC
Power Dissipation (Max) 540 W
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package PLUS-220SMD

Substitute Part Grouping Explanation

Substitution of the IXFV36N50PS is determined by alignment across the following critical electrical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum Vdss rating of 500V to ensure safe operation in the original application circuit. Parts with higher voltage ratings (560V) are acceptable as they provide additional design margin.

Current Capacity: Substitute parts must deliver continuous drain current (Id) at or above 36A at 25°C to maintain equivalent current-handling capability. Parts rated at 37A or higher satisfy this requirement.

On-Resistance (Rds On): The maximum on-resistance at specified gate-source voltage and current conditions must not significantly exceed the original specification to prevent excessive power dissipation and thermal stress.

Gate Charge (Qg): Gate charge values determine switching speed and driver circuit requirements. Substitute parts with comparable gate charge values ensure compatible gate drive characteristics.

Power Dissipation: Thermal performance must be sufficient to handle the application's power budget. Substitute parts with power dissipation ratings of 520W or higher maintain thermal equivalence.

Operating Temperature Range: All substitute parts must support the full -55°C to 150°C operating range to ensure reliability across environmental conditions.

Mounting Type: The original part uses surface mount technology (PLUS-220SMD). Substitutes may employ alternative mounting technologies (through-hole, different surface mount packages) provided the application design accommodates the physical form factor change.

Parameter Comparison

Parameter IXFV36N50PS APT37F50B SPB21N50C3ATMA1
Manufacturer IXYS Microchip Technology Infineon Technologies
FET Type N-Channel N-Channel N-Channel
Vdss (V) 500 500 560
Id @ 25°C (A) 36 37 21
Drive Voltage (V) 10 10 10
Rds On (Max) (mOhm) 170 @ 500mA, 10V 150 @ 18A, 10V 190 @ 13.1A, 10V
Qg @ 10V (nC) 93 145 95
Ciss @ 25V (pF) 5500 5710 2400
Power Dissipation (Max) (W) 540 520 208
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150
Mounting Type Surface Mount Through Hole Surface Mount
Package PLUS-220SMD TO-247-3 TO-263-3
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

APT37F50B (Microchip Technology): This part is classified as active product status and is ROHS3 compliant. It matches the IXFV36N50PS in voltage rating (500V) and exceeds current capacity (37A vs. 36A). The on-resistance is superior (150 mOhm vs. 170 mOhm), resulting in lower power dissipation. Gate charge is higher (145 nC vs. 93 nC), requiring verification of gate driver capability. The primary design consideration is the transition from surface mount PLUS-220SMD to through-hole TO-247-3 packaging, which requires PCB layout modification. This substitute is suitable for applications where board redesign is feasible and through-hole mounting is acceptable.

SPB21N50C3ATMA1 (Infineon Technologies): This part is classified as active product status and is ROHS3 compliant. It maintains surface mount technology (TO-263-3 package), minimizing PCB layout changes. The voltage rating is higher (560V), providing additional design margin. However, the continuous drain current is significantly lower (21A vs. 36A), making this substitute unsuitable for applications requiring the full 36A current capacity. The power dissipation rating (208W) is substantially lower than the original (540W), indicating reduced thermal capability. This part is applicable only to designs where current requirements do not exceed 21A.

For applications requiring full electrical equivalence with the IXFV36N50PS, the APT37F50B provides the closest match in current capacity and voltage rating, with the trade-off of packaging format change. The SPB21N50C3ATMA1 is limited to lower-current applications and should not be selected for designs requiring 36A continuous current.

Frequently Asked Questions (FAQ)

Q: Can the APT37F50B directly replace the IXFV36N50PS without circuit modification?

A: The APT37F50B is electrically compatible in terms of voltage rating and current capacity. However, it uses TO-247-3 through-hole packaging instead of PLUS-220SMD surface mount. PCB layout and mounting hardware must be modified to accommodate the different package form factor. Gate drive circuit verification is required due to the higher gate charge (145 nC vs. 93 nC).

Q: Why is the SPB21N50C3ATMA1 listed as a substitute if it has lower current rating?

A: The SPB21N50C3ATMA1 is listed as a substitute for applications where current requirements are lower than the original 36A specification. It maintains surface mount technology and active product status. It is not suitable for designs requiring the full 36A continuous current capacity of the IXFV36N50PS.

Q: What is the impact of higher gate charge in the APT37F50B?

A: Gate charge (Qg) of 145 nC in the APT37F50B compared to 93 nC in the IXFV36N50PS requires higher gate drive current or longer switching times. The gate driver circuit must be verified to supply sufficient current to charge the gate within the required switching frequency. This may impact switching losses and thermal performance.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the APT37F50B and SPB21N50C3ATMA1 are ROHS3 compliant. The original IXFV36N50PS RoHS status is not specified in the provided data.

Q: Can the SPB21N50C3ATMA1 be used in a 36A application?

A: No. The SPB21N50C3ATMA1 is rated for 21A continuous drain current, which is insufficient for applications requiring 36A. Using this part in a 36A application will result in thermal stress, reduced reliability, and potential device failure.

Q: What is the difference between PLUS-220SMD, TO-247-3, and TO-263-3 packages?

A: PLUS-220SMD is a surface mount package specific to IXYS devices. TO-247-3 is a through-hole package with three leads, commonly used for high-power applications. TO-263-3 (D2PAK) is a surface mount package with two leads plus a tab. Package selection affects PCB layout, thermal management approach, and mounting method.

Q: Is the higher voltage rating (560V) of the SPB21N50C3ATMA1 an advantage?

A: The 560V rating of the SPB21N50C3ATMA1 provides additional voltage margin compared to the 500V IXFV36N50PS. This is beneficial for circuit protection and reliability. However, this advantage is offset by the significantly lower current capacity (21A vs. 36A), making it unsuitable for the original application.

Q: What compliance certifications are relevant for substitute selection?

A: Both substitute parts are ROHS3 compliant and REACH unaffected. Both carry EAR99 export classification and the same HTSUS code (8541.29.0095) as the original part. These certifications ensure regulatory compliance for procurement and use in regulated markets.

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