IXFV30N60PS N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV30N60PS is an N-Channel 600V 30A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device is rated for 500W maximum power dissipation and features a PLUS-220SMD surface mount package. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	30	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	240 mOhm @ 15A, 10V	—
Gate Threshold Voltage Vgs(th) (Max)	5	V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	82	nC @ 10V
Maximum Gate Voltage Vgs	±30	V
Input Capacitance (Ciss) (Max) @ Vds	4000	pF @ 25V
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	PLUS-220SMD	—

Substitute Part Grouping Explanation

Substitution of the IXFV30N60PS is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 30A minimum at 25°C
Gate Threshold Voltage (Vgs(th)): 5V maximum
Maximum Gate Voltage (Vgs): ±30V minimum
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount or Through Hole (package-dependent)

The APT28F60B meets all electrical equivalence criteria. However, it differs in mounting type (Through Hole TO-247 versus Surface Mount PLUS-220SMD) and certain secondary parameters including gate charge and input capacitance. This substitution is valid for applications where package transition is acceptable and board-level integration can be modified accordingly.

Parameter Comparison

Parameter	IXFV30N60PS	APT28F60B	Unit
Manufacturer	IXYS	Microsemi Corporation	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	600	V
Continuous Drain Current (Id) @ 25°C	30	30	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	240 mOhm @ 15A, 10V	250 mOhm @ 14A, 10V	—
Gate Threshold Voltage Vgs(th) (Max)	5	5	V
Gate Charge (Qg) (Max) @ Vgs	82	140	nC @ 10V
Maximum Gate Voltage Vgs	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	4000	5575	pF @ 25V
Power Dissipation (Max)	500	520	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Through Hole	—
Package	PLUS-220SMD	TO-247-3	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

IXFV30N60PS (Primary Part - Obsolete): The IXFV30N60PS is classified as obsolete and no longer in active production. While 1061 pieces remain in stock, this part should not be selected for new designs. Existing designs utilizing this component require transition planning to an active equivalent.

APT28F60B (Substitute Part - Active): The APT28F60B is an active product manufactured by Microsemi Corporation and meets all critical electrical parameters required for functional equivalence. This device is ROHS3 compliant and carries REACH Unaffected status, matching the regulatory compliance profile of the original part.

Key Substitution Considerations: The primary distinction between these parts is packaging: the IXFV30N60PS uses surface mount PLUS-220SMD, while the APT28F60B uses through-hole TO-247-3. Secondary electrical differences include higher gate charge (140 nC versus 82 nC) and input capacitance (5575 pF versus 4000 pF) in the APT28F60B. These differences do not prevent functional substitution in most applications but require circuit-level evaluation for gate drive timing and switching performance.

Frequently Asked Questions (FAQ)

Q: Can the APT28F60B directly replace the IXFV30N60PS on the same PCB?

A: No. The IXFV30N60PS uses a surface mount PLUS-220SMD package, while the APT28F60B uses a through-hole TO-247-3 package. PCB layout and footprint modifications are required. However, the electrical performance is compatible for most applications.

Q: What are the key electrical differences between these parts?

A: Both parts share identical Vdss (600V), Id (30A), Vgs(th) (5V), and operating temperature range (-55°C to 150°C). The APT28F60B has slightly higher Rds On (250 mOhm versus 240 mOhm), higher gate charge (140 nC versus 82 nC), and higher input capacitance (5575 pF versus 4000 pF). These differences are within acceptable tolerances for most switching applications.

Q: Why is the IXFV30N60PS obsolete?

A: The IXFV30N60PS is no longer manufactured by IXYS. Existing inventory is limited to 1061 pieces. For production continuity and new designs, the active APT28F60B is the recommended alternative.

Q: Are there compliance differences between these parts?

A: The IXFV30N60PS carries REACH Unaffected status and EAR99 classification. The APT28F60B is ROHS3 compliant, REACH Unaffected, and also EAR99 classified. Both parts meet equivalent regulatory requirements.

Q: What is the impact of higher gate charge in the APT28F60B?

A: The APT28F60B has 58 nC higher gate charge (140 nC versus 82 nC). This requires slightly more gate drive current and longer switching times. Gate driver circuits must be evaluated to ensure adequate drive capability, particularly in high-frequency switching applications.

Q: Can I use the APT28F60B in a surface mount design without modification?

A: No. The TO-247-3 through-hole package requires a different PCB footprint and mounting approach than the PLUS-220SMD surface mount package. Board redesign is necessary.

Q: Are both parts rated for the same power dissipation?

A: Both parts are rated for similar power dissipation: IXFV30N60PS at 500W and APT28F60B at 520W. Thermal management requirements are equivalent.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message