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IXFV30N60P N-Channel 600V 30A MOSFET Equivalent & Substitute Parts
Part Overview
The IXFV30N60P is an N-Channel 600V 30A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device is rated for 500W power dissipation and features a PLUS220 package (TO-220-3 Short Tab) for through-hole mounting. The part is currently obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning.
Substitution becomes necessary when the original part reaches end-of-life status or when inventory becomes unavailable. Equivalent parts must maintain electrical compatibility across critical parameters including drain-source voltage, continuous drain current, on-state resistance, and thermal characteristics.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 600 | V |
| Current - Continuous Drain (Id) @ 25°C | 30 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 240 | mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 82 | nC @ 10V |
| Power Dissipation (Max) | 500 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-220-3, Short Tab | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution logic for the IXFV30N60P is based on the following critical electrical and mechanical parameters:
Primary Compatibility Criteria:
- Drain to Source Voltage (Vdss): 600V minimum
- Continuous Drain Current (Id): 30A or higher at 25°C
- On-State Resistance (Rds On): 240 mOhm or lower at specified conditions
- Gate Charge (Qg): 82 nC or lower
- Power Dissipation: 500W or higher
- Operating Temperature Range: -55°C to 150°C
- Mounting Type: Through Hole
- Package Compatibility: TO-220-3 or equivalent footprint
Substitution Categories:
Category A - Direct Electrical Equivalents (Same Current Rating): The APT28F60B from Microsemi Corporation matches the 30A continuous drain current specification with 600V Vdss rating and 520W power dissipation. This part operates within the same temperature range and uses a compatible TO-247-3 package, which is mechanically interchangeable in most through-hole applications.
Category B - Reduced Current Capacity (15A-16A Range): Parts including FCP260N60E (Fairchild), STP22NM60N (STMicroelectronics), and SPP15N60C3XKSA1 (Infineon) provide 15-16A continuous drain current with 600-650V Vdss ratings. These devices are suitable for applications where the full 30A capacity is not required but electrical characteristics remain compatible.
Category C - Lower Current Capacity (13-13.8A Range): Parts including STP18N60M2, STP18NM60N (STMicroelectronics), IPP60R280C6XKSA1, and IPP60R280E6XKSA1 (Infineon) provide 13-13.8A continuous drain current with 600V Vdss ratings. These devices are applicable only when circuit design permits reduced current handling.
All substitute parts maintain N-Channel MOSFET technology, through-hole mounting, and compatible operating temperature ranges. Package variations (TO-220-3, TO-247-3) are mechanically compatible in standard through-hole PCB layouts.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Pd (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| IXFV30N60P | IXYS | 600 | 30 | 240 @ 15A, 10V | 82 @ 10V | 500 | TO-220-3 | Obsolete |
| APT28F60B | Microsemi | 600 | 30 | 250 @ 14A, 10V | 140 @ 10V | 520 | TO-247-3 | Active |
| STP22NM60N | STMicroelectronics | 600 | 16 | 220 @ 8A, 10V | 44 @ 10V | 125 | TO-220-3 | Active |
| STP18N60M2 | STMicroelectronics | 600 | 13 | 280 @ 6.5A, 10V | 21.5 @ 10V | 110 | TO-220-3 | Active |
| STP18NM60N | STMicroelectronics | 600 | 13 | 285 @ 6.5A, 10V | 35 @ 10V | 110 | TO-220-3 | Active |
| FCP260N60E | Fairchild Semiconductor | 600 | 15 | 260 @ 7.5A, 10V | 62 @ 10V | 156 | TO-220-3 | Active |
| IPP60R280C6XKSA1 | Infineon Technologies | 600 | 13.8 | 280 @ 6.5A, 10V | 43 @ 10V | 104 | TO-220-3 | Last Time Buy |
| IPP60R280E6XKSA1 | Infineon Technologies | 600 | 13.8 | 280 @ 6.5A, 10V | 43 @ 10V | 104 | TO-220-3 | Obsolete |
| SPP15N60C3XKSA1 | Infineon Technologies | 650 | 15 | 280 @ 9.4A, 10V | 63 @ 10V | 156 | TO-220-3 | Active |
Engineering Selection Recommendations
For Direct Replacement (Same Current Capacity):
The APT28F60B from Microsemi Corporation is the primary equivalent for the IXFV30N60P. Both devices maintain 30A continuous drain current at 600V Vdss with comparable on-state resistance characteristics. The APT28F60B is currently in Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The TO-247-3 package is mechanically compatible with standard through-hole PCB layouts designed for TO-220-3 components.
For Reduced Current Applications:
When circuit design permits operation below 30A continuous drain current, the following active-status alternatives are available:
- STP22NM60N (STMicroelectronics): 16A rating, 220 mOhm Rds On, ROHS3 compliant, extensive inventory availability (25,100 units)
- FCP260N60E (Fairchild Semiconductor): 15A rating, 260 mOhm Rds On, active status, high inventory (4,984 units)
- SPP15N60C3XKSA1 (Infineon Technologies): 15A rating, 650V Vdss, ROHS3 compliant, active status (1,430 units)
For Legacy System Maintenance:
The STP18N60M2 and STP18NM60N from STMicroelectronics provide 13A continuous drain current with 600V Vdss. Both are ROHS3 compliant and in active production status. STP18NM60N has the highest inventory availability (24,200 units), supporting long-term procurement requirements.
Compliance and Certification:
All recommended substitute parts maintain REACH Unaffected status and EAR99 ECCN classification, matching the regulatory profile of the original IXFV30N60P. ROHS3 compliance is confirmed for all active-status alternatives, ensuring compatibility with current manufacturing and environmental standards.
Frequently Asked Questions (FAQ)
Q: Can the APT28F60B directly replace the IXFV30N60P in existing PCB designs?
A: The APT28F60B is electrically equivalent with matching 30A continuous drain current and 600V Vdss rating. The TO-247-3 package uses the same three-pin through-hole configuration as the TO-220-3 Short Tab package. Pin assignments are identical (Gate, Drain, Source). PCB layouts designed for TO-220-3 components accommodate TO-247-3 packages without modification.
Q: What is the difference between the STP18N60M2 and STP18NM60N?
A: Both devices are STMicroelectronics N-Channel 600V MOSFETs with 13A continuous drain current and TO-220-3 packages. The STP18N60M2 belongs to the MDmesh™ II Plus series with 21.5 nC gate charge and 791 pF input capacitance. The STP18NM60N belongs to the MDmesh™ II series with 35 nC gate charge and 1000 pF input capacitance. Both are ROHS3 compliant and active status. Selection depends on circuit requirements for switching speed and capacitive loading.
Q: Why does the SPP15N60C3XKSA1 have a 650V Vdss rating instead of 600V?
A: The SPP15N60C3XKSA1 is rated for 650V Vdss, which exceeds the 600V requirement of the IXFV30N60P. Higher voltage ratings provide additional safety margin in applications subject to voltage transients or overshoot conditions. This part is suitable for 600V applications and offers enhanced voltage headroom.
Q: What is the significance of "Last Time Buy" status for the IPP60R280C6XKSA1?
A: Last Time Buy status indicates that Infineon Technologies has announced end-of-production for this part. Existing inventory is available for purchase, but no future production is planned. This part should be considered for immediate procurement if required for legacy system support. For new designs, active-status alternatives such as STP22NM60N or FCP260N60E are recommended.
Q: Are there package compatibility issues between TO-220-3 and TO-247-3 devices?
A: Both TO-220-3 and TO-247-3 packages use three-pin through-hole configurations with identical pin assignments (Gate, Drain, Source). The primary difference is mechanical form factor: TO-247-3 has a larger footprint with increased surface area for heat dissipation. Standard through-hole PCB layouts accommodate both packages. Thermal management considerations may favor TO-247-3 in high-power applications due to improved heat spreading.
Q: Can lower-current devices (13A-16A) be used in applications designed for 30A operation?
A: Lower-current devices are suitable only when circuit design analysis confirms that maximum continuous drain current requirements do not exceed the substitute part rating. Using a device with insufficient current capacity results in thermal stress, reduced reliability, and potential component failure. Circuit redesign or thermal management modifications may be necessary to accommodate lower-current alternatives.
Q: What is the impact of different gate charge (Qg) values on circuit performance?
A: Gate charge affects switching speed and gate drive circuit requirements. The IXFV30N60P has 82 nC gate charge, while substitutes range from 21.5 nC to 140 nC. Lower gate charge enables faster switching with reduced drive power requirements. Higher gate charge requires more robust gate drive circuits. Gate drive circuit design must accommodate the substitute part's gate charge specification to ensure proper switching performance and prevent gate voltage violations.
Q: Are all substitute parts RoHS compliant?
A: All active-status substitute parts listed (APT28F60B, STP22NM60N, STP18N60M2, STP18NM60N, FCP260N60E, SPP15N60C3XKSA1) are ROHS3 compliant. The IPP60R280C6XKSA1 (Last Time Buy) and IPP60R280E6XKSA1 (Obsolete) are also ROHS3 compliant. RoHS compliance ensures compatibility with current manufacturing standards and environmental regulations.
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