IXFV30N50P N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV30N50P is an N-Channel 500V 30A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device is rated for 460W power dissipation and features a PLUS220 package (TO-220-3 Short Tab) for through-hole mounting. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing applications requiring component replacement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	30	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	200 mOhm @ 15A, 10V	—
Gate Charge (Qg) @ Vgs	70	nC @ 10V
Power Dissipation (Max)	460	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3, Short Tab	—

Substitute Part Grouping Explanation

Substitution of the IXFV30N50P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V minimum (allows 550V rated devices)
Continuous Drain Current (Id): 30A or greater at 25°C
Drive Voltage: 10V or compatible gate drive requirements
On-State Resistance (Rds On): 200 mOhm or lower at specified conditions
Operating Temperature: -55°C to 150°C minimum range
Mounting Type: Through Hole
Package Compatibility: TO-220-3 or TO-247-3 packages

Substitution Logic: Devices meeting or exceeding the primary electrical specifications are classified as direct substitutes. Devices with reduced current ratings (below 30A) or significantly lower power dissipation are classified as partial substitutes suitable only for reduced-load applications. Devices with higher voltage ratings (550V) are acceptable as they provide additional design margin. Package variations (TO-247 vs. TO-220) are acceptable provided through-hole mounting is maintained and PCB layout accommodates the physical dimensions.

Parameter Comparison

Parameter	IXFV30N50P	APT30F50B	STP28NM50N	STP23NM50N	IPP50R199CPXKSA1	SPP21N50C3XKSA1	STP18N55M5
Manufacturer	IXYS	Microchip	STMicroelectronics	STMicroelectronics	Infineon	Infineon	STMicroelectronics
Vdss (V)	500	500	500	500	550	500	550
Id @ 25°C (A)	30	30	21	17	17	21	16
Rds On (Max) (mOhm)	200 @ 15A, 10V	190 @ 14A, 10V	158 @ 10.5A, 10V	190 @ 8.5A, 10V	199 @ 9.9A, 10V	190 @ 13.1A, 10V	192 @ 8A, 10V
Qg (Max) (nC)	70 @ 10V	115 @ 10V	50 @ 10V	45 @ 10V	45 @ 10V	95 @ 10V	31 @ 10V
Power Dissipation (Max) (W)	460	415	150	125	139	208	110
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-247-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Not For New Designs	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Full Electrical Equivalence):

The APT30F50B (Microchip Technology) is the primary direct substitute for the IXFV30N50P. Both devices share identical 500V Vdss rating and 30A continuous drain current specification. The APT30F50B exhibits superior on-state resistance (190 mOhm vs. 200 mOhm) and lower power dissipation (415W vs. 460W), providing equivalent or improved thermal performance. The APT30F50B is classified as Active and ROHS3 Compliant, making it suitable for new designs. Package variation (TO-247-3 vs. TO-220-3) requires PCB layout verification but maintains through-hole mounting compatibility.

Partial Substitutes (Reduced Current Rating):

The STP28NM50N (STMicroelectronics) and SPP21N50C3XKSA1 (Infineon) are suitable for applications where continuous drain current requirements do not exceed 21A. Both devices maintain 500V Vdss rating and demonstrate superior on-state resistance characteristics. The STP28NM50N is Active and ROHS3 Compliant. The SPP21N50C3XKSA1 is classified as Not For New Designs but remains available in inventory.

The STP23NM50N (STMicroelectronics) and IPP50R199CPXKSA1 (Infineon) are suitable for applications requiring 17A or less continuous drain current. Both maintain 500V Vdss rating (IPP50R199CPXKSA1 rated 550V). The STP23NM50N is Active and ROHS3 Compliant. The IPP50R199CPXKSA1 is classified as Not For New Designs.

The STP18N55M5 (STMicroelectronics) is suitable for applications requiring 16A or less continuous drain current. This device features 550V Vdss rating, providing additional voltage margin. The STP18N55M5 is Active and ROHS3 Compliant.

Compliance and Availability:

All substitute parts maintain -55°C to 150°C operating temperature range compatibility with the IXFV30N50P. All substitute parts are REACH Unaffected and classified under ECCN EAR99. Active-status devices (APT30F50B, STP28NM50N, STP23NM50N, STP18N55M5) are recommended for new designs. Devices classified as Not For New Designs (IPP50R199CPXKSA1, SPP21N50C3XKSA1) are available for legacy system support and replacement applications only.

Frequently Asked Questions (FAQ)

Q: Can the APT30F50B directly replace the IXFV30N50P in existing PCB layouts?

A: The APT30F50B shares identical electrical specifications (500V, 30A) but uses TO-247-3 package instead of TO-220-3. Physical dimensions differ; PCB layout verification is required. Pin configuration remains compatible (Gate, Drain, Source). Mounting hardware and thermal interface requirements may differ due to package geometry.

Q: Why are some substitute parts rated for lower current (17A, 21A) than the original 30A specification?

A: Lower-current devices are listed as partial substitutes for applications where actual operating current does not approach the 30A maximum rating. These devices maintain identical voltage ratings and superior on-state resistance characteristics. Selection depends on actual circuit current requirements, not maximum device rating.

Q: What is the significance of the 550V Vdss rating on STP18N55M5 and IPP50R199CPXKSA1?

A: Devices rated for 550V Vdss provide additional voltage margin above the 500V requirement. These devices are functionally compatible with 500V applications and offer enhanced reliability in circuits subject to voltage transients or overshoot conditions.

Q: Are devices classified as "Not For New Designs" suitable for replacement applications?

A: Yes. Devices classified as Not For New Designs (IPP50R199CPXKSA1, SPP21N50C3XKSA1) remain suitable for component replacement in existing systems and legacy applications. These classifications indicate that manufacturers recommend Active-status alternatives for new product development. Existing inventory remains available and functional.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the device. The IXFV30N50P requires 70 nC at 10V. Substitute devices range from 31 nC (STP18N55M5) to 115 nC (APT30F50B). Lower gate charge reduces driver power dissipation and enables faster switching. Higher gate charge requires more driver current but does not prevent substitution if the gate driver is rated accordingly.

Q: What packaging considerations apply when substituting TO-220-3 with TO-247-3?

A: TO-247-3 packages are physically larger than TO-220-3, with different mounting hole spacing and thermal interface dimensions. PCB layout must accommodate the larger footprint. TO-247 packages typically offer improved thermal performance due to larger die-attach area. Mounting hardware and heatsink interfaces require verification before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are ROHS3 Compliant. The original IXFV30N50P RoHS status is not specified in available documentation. All substitutes meet current environmental compliance requirements for new designs and manufacturing.

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