IXFV26N50PS N-Channel 500V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV26N50PS is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 26A continuous drain current in a surface mount PLUS-220SMD package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 400W at the case temperature.

Substiute Parts

IXFV26N50PS

IXYSIn Stock: 1084IXFV26N50PS Datasheet

Current PartRFQ

APT30F50B

Microchip TechnologyIn Stock: 1133APT30F50B Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFV26N50PS is determined by electrical parameter compatibility within the following criteria:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 500V minimum
• Continuous Drain Current (Id): 26A or greater
• Gate Drive Voltage: 10V compatible
• Operating Temperature Range: -55°C to 150°C minimum
• Technology: N-Channel MOSFET

Acceptable Variation Parameters:

• On-State Resistance (Rds On): Equal or lower values indicate improved performance
• Gate Charge (Qg): Higher values acceptable; lower values preferred for switching efficiency
• Power Dissipation: Equal or higher ratings acceptable
• Input Capacitance (Ciss): Higher values acceptable

Package Consideration: The IXFV26N50PS uses a surface mount PLUS-220SMD package. Substitutes may employ different package types (through-hole or alternative surface mount) provided the electrical parameters meet or exceed the specified ratings. Package selection depends on circuit board layout and thermal management requirements.

Parameter Comparison

Engineering Selection Recommendations

APT30F50B as Primary Substitute:

The APT30F50B from Microchip Technology meets all critical electrical parameters for substitution of the IXFV26N50PS. The substitute device provides:

• Identical 500V drain-to-source voltage rating
• Higher continuous drain current (30A versus 26A), providing design margin
• Lower on-state resistance (190 mOhm versus 230 mOhm), reducing conduction losses
• Equivalent operating temperature range (-55°C to 150°C)
• Active product status, ensuring long-term availability and supply chain continuity

Compliance and Regulatory Status:

Both the original part and substitute are classified as REACH Unaffected and carry EAR99 export classification. The APT30F50B holds RoHS3 compliance, meeting current environmental standards.

Package Transition Consideration:

The APT30F50B employs a through-hole TO-247-3 package, whereas the IXFV26N50PS uses surface mount PLUS-220SMD. This package change requires circuit board redesign for mechanical mounting and thermal management. The through-hole package may provide improved thermal dissipation in applications with adequate board space and heatsinking infrastructure.

Frequently Asked Questions (FAQ)

Q: Can the APT30F50B directly replace the IXFV26N50PS without circuit modification?

A: Electrical substitution is valid based on voltage, current, and temperature ratings. However, the package change from PLUS-220SMD (surface mount) to TO-247-3 (through-hole) requires circuit board layout modification. Pin configuration and thermal interface design must be re-evaluated for the new package.

Q: What is the significance of the lower on-state resistance in the APT30F50B?

A: The APT30F50B exhibits 190 mOhm on-state resistance compared to 230 mOhm in the IXFV26N50PS. Lower on-state resistance reduces conduction losses and heat generation during operation, improving overall circuit efficiency and potentially reducing thermal management requirements.

Q: Does the higher gate charge of the APT30F50B affect circuit performance?

A: The APT30F50B specifies 115 nC gate charge versus 60 nC for the IXFV26N50PS. Higher gate charge requires longer switching times and increased gate drive energy. Gate driver circuits must supply sufficient current to meet switching frequency requirements. This parameter should be evaluated against the specific gate driver capability in the application circuit.

Q: Are there thermal management differences between the two packages?

A: The through-hole TO-247-3 package of the APT30F50B typically provides superior thermal coupling to heatsinks compared to surface mount packages. However, the PLUS-220SMD package may offer advantages in compact designs. Thermal analysis specific to the application circuit and heatsinking approach is necessary to determine thermal performance equivalence.

Q: What is the impact of the higher input capacitance in the APT30F50B?

A: The APT30F50B specifies 4525 pF input capacitance versus 3600 pF in the IXFV26N50PS. Higher input capacitance increases gate charge and switching losses. Gate driver design must account for this capacitance to ensure adequate drive current and switching performance at the intended operating frequency.

Q: Why is the IXFV26N50PS classified as obsolete?

A: Obsolete status indicates the manufacturer has discontinued production and support. The APT30F50B, classified as active, ensures continued availability, technical support, and supply chain reliability for new designs and ongoing production requirements.

Q: Are both devices suitable for high-frequency switching applications?

A: Both devices operate within the same temperature range and voltage class. The lower gate charge of the IXFV26N50PS (60 nC) may provide advantages in high-frequency applications. The APT30F50B's higher gate charge (115 nC) requires evaluation against specific switching frequency requirements and gate driver capabilities.