IXFV26N50P N-Channel MOSFET 500V 26A Equivalent & Substitute Parts

Part Overview

The IXFV26N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 26A continuous drain current. This device is part of the HiPerFET™ and PolarHT™ series and is housed in a PLUS220 package (TO-220-3 form factor). The IXFV26N50P is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFV26N50P

IXYSIn Stock: 1036IXFV26N50P Datasheet

Current PartRFQ

APT30F50B

Microchip TechnologyIn Stock: 1133APT30F50B Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFV26N50P is based on electrical and mechanical parameter alignment within the N-Channel MOSFET category. The critical parameters determining substitution eligibility are:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
• Continuous Drain Current (Id): Must equal or exceed 26A at 25°C
• On-State Resistance (Rds On): Must not significantly degrade circuit performance
• Gate Threshold Voltage (Vgs(th)): Must remain within acceptable gate drive specifications
• Power Dissipation: Must support thermal requirements of the application
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole configuration required
• Package Form Factor: TO-220 family packages acceptable with pin configuration verification

The APT30F50B from Microchip Technology meets these substitution criteria through equivalent voltage rating, superior current rating, improved on-state resistance characteristics, and compatible through-hole mounting, though with a different package variant (TO-247 versus PLUS220).

Parameter Comparison

Engineering Selection Recommendations

APT30F50B as Primary Substitute:

The APT30F50B is suitable as a substitute for the IXFV26N50P based on the following factors:

1. Electrical Equivalence: Both devices share identical 500V Vdss rating and compatible gate drive specifications (±30V Vgs Max, 10V drive voltage). The APT30F50B provides 30A continuous drain current, exceeding the IXFV26N50P requirement of 26A.

2. Performance Improvement: The APT30F50B exhibits lower on-state resistance (190 mOhm versus 230 mOhm), resulting in reduced conduction losses and improved thermal performance within the same power dissipation envelope (415W versus 400W).

3. Product Status: The APT30F50B maintains Active product status with full manufacturer support, whereas the IXFV26N50P is Obsolete. This ensures long-term availability and technical documentation access.

4. Compliance: Both devices maintain REACH Unaffected status and EAR99 ECCN classification, ensuring regulatory consistency.

5. Package Consideration: The APT30F50B uses TO-247-3 packaging versus the IXFV26N50P PLUS220 (TO-220-3) package. Both are through-hole configurations; however, PCB layout modifications are required due to different pin spacing and mechanical dimensions.

6. Gate Charge: The APT30F50B exhibits higher gate charge (115 nC versus 60 nC), requiring verification of gate driver capability to ensure adequate switching speed and efficiency in the target application.

Frequently Asked Questions (FAQ)

Q: Can the APT30F50B directly replace the IXFV26N50P without PCB modifications?

A: No. While both devices are through-hole MOSFETs with compatible electrical specifications, the APT30F50B uses TO-247-3 packaging and the IXFV26N50P uses TO-220-3 (PLUS220) packaging. These packages have different pin spacing and mechanical footprints, requiring PCB layout changes. Pin-to-pin electrical function remains consistent (Gate, Drain, Source).

Q: What are the key electrical differences between these devices?

A: The primary differences are continuous drain current (26A versus 30A), on-state resistance (230 mOhm versus 190 mOhm), and gate charge (60 nC versus 115 nC). The APT30F50B provides higher current capacity and lower conduction losses. The increased gate charge may affect switching frequency performance depending on gate driver specifications.

Q: Is the APT30F50B suitable for applications requiring the exact 26A rating?

A: Yes. The APT30F50B is rated for 30A continuous drain current, which exceeds the 26A requirement. This provides design margin and improved thermal performance. The device operates safely at 26A with reduced junction temperature rise.

Q: Are there thermal management differences between the two packages?

A: Both TO-220-3 and TO-247-3 packages are through-hole configurations with similar thermal characteristics. The TO-247-3 package may offer slightly improved thermal performance due to its larger die mounting area, though both support the required power dissipation levels (400W and 415W respectively).

Q: What gate driver considerations apply when substituting to the APT30F50B?

A: The APT30F50B gate charge is 115 nC compared to 60 nC for the IXFV26N50P. Verify that the existing gate driver can supply sufficient current to charge the gate within the required switching time. Higher gate charge may increase switching losses if the driver current is insufficient.

Q: Are both devices RoHS compliant?

A: The IXFV26N50P does not specify RoHS status in the provided data. The APT30F50B is ROHS3 Compliant. Verify RoHS requirements for your application before substitution.

Q: What is the moisture sensitivity level for both devices?

A: Both the IXFV26N50P and APT30F50B have Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.