IXFV22N60P N-Channel 600V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV22N60P is an N-Channel 600V 22A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device is rated for 400W power dissipation and features a PLUS220 package (TO-220-3 Short Tab) for through-hole mounting. The part is currently obsolete, making identification of equivalent and substitute components essential for ongoing system support, design updates, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package and mounting variations.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	22	A (Tc)
On-State Resistance (Rds On) @ 11A, 10V	350	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5.5	V
Gate Charge (Qg) @ 10V	58	nC
Input Capacitance (Ciss) @ 25V	3600	pF
Power Dissipation (Max)	400	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3, Short Tab	Through Hole
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitution of the IXFV22N60P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 22A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance; values within 350mOhm or lower are preferred
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Operating Temperature Range: Must support -55°C to 150°C
Mounting Type: Through-hole configuration required
Package Compatibility: TO-220-3 or equivalent footprint

Substitution Logic: Parts are grouped into two categories based on electrical performance relative to the IXFV22N60P:

Higher Current Capability Substitutes (24A and above): APT23F60B provides superior current handling and lower Rds On, suitable for applications requiring enhanced performance margin.
Equivalent or Reduced Current Substitutes (13A to 16A): STP18N60M2, STP18NM60N, STP22NM60N, IPP60R280C6XKSA1, IPP60R280E6XKSA1, and FCP260N60E operate within the 600V class with reduced current ratings. These are suitable for applications where the full 22A capability is not required or where thermal management permits lower current operation.
Voltage-Elevated Substitute (650V): SPP15N60C3XKSA1 provides higher voltage rating (650V) with 15A current capability, applicable in systems requiring additional voltage margin.

All substitute parts maintain the -55°C to 150°C operating temperature range and through-hole mounting configuration.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXFV22N60P	IXYS	600	22	350 @ 11A	5.5 @ 4mA	58 @ 10V	3600 @ 25V	400	TO-220-3	Obsolete
APT23F60B	Microchip Technology	600	24	290 @ 11A	5 @ 1mA	110 @ 10V	4415 @ 25V	415	TO-247-3	Active
STP18N60M2	STMicroelectronics	600	13	280 @ 6.5A	4 @ 250µA	21.5 @ 10V	791 @ 100V	110	TO-220-3	Active
STP18NM60N	STMicroelectronics	600	13	285 @ 6.5A	4 @ 250µA	35 @ 10V	1000 @ 50V	110	TO-220-3	Active
STP22NM60N	STMicroelectronics	600	16	220 @ 8A	4 @ 100µA	44 @ 10V	1300 @ 50V	125	TO-220-3	Active
IPP60R280C6XKSA1	Infineon Technologies	600	13.8	280 @ 6.5A	3.5 @ 430µA	43 @ 10V	950 @ 100V	104	TO-220-3	Last Time Buy
IPP60R280E6XKSA1	Infineon Technologies	600	13.8	280 @ 6.5A	3.5 @ 430µA	43 @ 10V	950 @ 100V	104	TO-220-3	Obsolete
FCP260N60E	Fairchild Semiconductor	600	15	260 @ 7.5A	3.5 @ 250µA	62 @ 10V	2500 @ 25V	156	TO-220-3	Active
SPP15N60C3XKSA1	Infineon Technologies	650	15	280 @ 9.4A	3.9 @ 675µA	63 @ 10V	1660 @ 25V	156	TO-220-3	Active

Engineering Selection Recommendations

For Direct Replacement with Enhanced Performance:

APT23F60B (Microchip Technology) is the primary substitute when higher current capacity and improved on-state resistance are acceptable. This part is Active status with ROHS3 compliance. The TO-247-3 package requires PCB layout modification but provides superior thermal characteristics. Gate charge is elevated (110nC vs. 58nC), requiring gate driver adjustment for switching speed optimization.

For Pin-Compatible TO-220-3 Substitution:

STP22NM60N (STMicroelectronics) provides the closest electrical match within the TO-220-3 footprint. This part is Active status with ROHS3 compliance and offers 16A continuous current with 220mOhm Rds On. The reduced current rating (16A vs. 22A) requires thermal analysis to confirm adequate margin in the target application. Gate charge of 44nC is significantly lower than the original part, improving switching efficiency.

STP18N60M2 and STP18NM60N (STMicroelectronics) are Active status alternatives with identical 13A ratings and TO-220-3 compatibility. Both feature lower gate charge (21.5nC and 35nC respectively) and reduced input capacitance, suitable for applications with lower current demands or where switching losses must be minimized.

For Voltage-Elevated Applications:

SPP15N60C3XKSA1 (Infineon Technologies) is Active status with ROHS3 compliance and provides 650V Vdss rating. This part is applicable in systems requiring additional voltage margin beyond 600V. The 15A current rating and 280mOhm Rds On require thermal verification for the target application.

For Obsolete Part Replacement:

IPP60R280C6XKSA1 (Infineon Technologies) is Last Time Buy status and should be prioritized over IPP60R280E6XKSA1 (Obsolete status) if either is selected. Both parts are ROHS3 compliant with identical electrical specifications (13.8A, 280mOhm Rds On, 600V).

FCP260N60E (Fairchild Semiconductor) is Active status with 15A current and 260mOhm Rds On in TO-220-3 package. This part provides a conservative substitute with adequate performance margin.

Compliance and Certification:

All recommended substitutes maintain REACH Unaffected status and EAR99 ECCN classification. Moisture Sensitivity Level 1 (Unlimited) is consistent across all parts. ROHS3 compliance is confirmed for all Active status parts.

Frequently Asked Questions (FAQ)

Q: Can APT23F60B directly replace IXFV22N60P without circuit modification?

A: APT23F60B is electrically compatible at the 600V, 22A+ operating point. However, the TO-247-3 package requires PCB layout changes. Gate charge is doubled (110nC vs. 58nC), necessitating gate driver verification to ensure adequate drive current and switching speed compatibility. Thermal management may improve due to superior package design.

Q: Why do some substitutes have lower current ratings (13A to 16A) than the original 22A?

A: Lower-rated parts operate within the same 600V voltage class but with reduced continuous current capability. These are suitable for applications where the full 22A is not required or where thermal constraints limit actual operating current. System thermal analysis must confirm that the reduced rating provides adequate margin for the target application.

Q: What is the difference between STP18N60M2 and STP18NM60N?

A: Both parts are STMicroelectronics 13A, 600V MOSFETs in TO-220-3 packages with identical Rds On (280-285mOhm). STP18N60M2 features lower gate charge (21.5nC) and lower input capacitance (791pF @ 100V), resulting in faster switching. STP18NM60N has higher gate charge (35nC) and input capacitance (1000pF @ 50V). Selection depends on switching frequency requirements and gate driver capabilities.

Q: Is SPP15N60C3XKSA1 suitable as a direct substitute?

A: SPP15N60C3XKSA1 provides 650V rating with 15A current in TO-220-3 package. This is a conservative substitute offering additional voltage margin. The 15A rating requires thermal verification. The 280mOhm Rds On is comparable to other 15A alternatives. Use this part when voltage margin is a design priority.

Q: What are the implications of using IPP60R280C6XKSA1 (Last Time Buy status)?

A: Last Time Buy status indicates limited future availability. IPP60R280C6XKSA1 is ROHS3 compliant and electrically equivalent to the obsolete IPP60R280E6XKSA1. If this part is selected, procurement should secure adequate inventory for product lifecycle requirements. Active status alternatives (STP18N60M2, STP22NM60N, FCP260N60E) are recommended for new designs requiring long-term availability.

Q: How does package selection affect thermal performance?

A: TO-247-3 (APT23F60B) provides superior thermal characteristics compared to TO-220-3 due to larger die attachment area and improved lead design. TO-220-3 packages (all other substitutes) are functionally equivalent thermally. System thermal analysis must account for heatsink interface, mounting pressure, and thermal interface material when comparing packages.

Q: Are all substitutes compatible with ±30V gate voltage specification?

A: IXFV22N60P specifies ±30V maximum gate voltage. APT23F60B and STP22NM60N support ±30V. STP18N60M2, STP18NM60N, IPP60R280 series, and FCP260N60E specify ±25V or ±20V maximum gate voltage. Gate driver circuits must be verified to ensure gate voltage does not exceed the substitute part's rating.

Q: What is the significance of gate charge differences across substitutes?

A: Gate charge (Qg) directly affects switching speed and gate driver power dissipation. IXFV22N60P requires 58nC @ 10V. STP18N60M2 requires only 21.5nC, enabling faster switching and lower driver losses. APT23F60B requires 110nC, requiring higher gate drive current. Gate driver selection and PCB layout must accommodate the substitute part's gate charge specification.

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