IXFV22N50PS N-Channel 500V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV22N50PS is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 22A continuous drain current at 25°C. This device is packaged in the PLUS-220SMD surface mount configuration and is designed for high-voltage switching applications requiring compact form factors. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	22	A
Rds On (Max) @ 11A, 10V	270	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	5.5	V
Gate Charge (Qg) @ 10V	50	nC
Power Dissipation (Max)	350	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	PLUS-220SMD	—

Substitute Part Grouping Explanation

Substitution of the IXFV22N50PS is determined by electrical parameter compatibility within the following criteria:

Critical Electrical Parameters for Substitution:

Drain-to-source voltage rating (Vdss) must equal or exceed 500V
Continuous drain current (Id) must meet or exceed 22A at 25°C
Gate drive voltage compatibility at 10V
Operating temperature range must encompass -55°C to 150°C
On-state resistance (Rds On) characteristics must support equivalent switching performance

Mechanical Considerations:

Package type and mounting method affect circuit board integration
Surface mount packages (PLUS-220SMD) differ from through-hole packages (TO-247)
Thermal management capabilities vary with package geometry

The APT24F50B from Microchip Technology meets the electrical substitution criteria with equivalent voltage rating, higher current capability, and compatible gate drive specifications. However, the package transition from surface mount to through-hole represents a mechanical design change requiring board layout modification.

Parameter Comparison

Parameter	IXFV22N50PS	APT24F50B	Unit
Manufacturer	IXYS	Microchip Technology	—
Drain to Source Voltage (Vdss)	500	500	V
Continuous Drain Current (Id) @ 25°C	22	24	A
Rds On (Max) @ 11A, 10V	270	240	mOhm
Gate Threshold Voltage (Vgs(th))	5.5 @ 2.5mA	5.0 @ 1mA	V
Gate Charge (Qg) @ 10V	50	90	nC
Input Capacitance (Ciss) @ 25V	2630	3630	pF
Power Dissipation (Max)	350	335	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Through Hole	—
Package	PLUS-220SMD	TO-247-3	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

Electrical Compatibility: The APT24F50B provides electrical equivalence to the IXFV22N50PS with superior on-state resistance (240 mOhm versus 270 mOhm) and higher current rating (24A versus 22A). Both devices maintain identical voltage ratings and operating temperature ranges. The APT24F50B exhibits higher gate charge (90 nC versus 50 nC) and input capacitance (3630 pF versus 2630 pF), which may affect gate drive circuit design but does not preclude substitution.

Product Status and Compliance: The IXFV22N50PS is classified as obsolete, whereas the APT24F50B maintains active product status. Both devices carry REACH Unaffected designation and EAR99 export classification. The APT24F50B includes RoHS3 compliance certification.

Packaging and Integration: The transition from PLUS-220SMD surface mount to TO-247-3 through-hole packaging requires circuit board redesign. This substitution is suitable for applications where board layout modification is feasible and thermal management through the TO-247 package is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the APT24F50B directly replace the IXFV22N50PS without circuit modifications?

A: Electrical substitution is valid based on voltage rating, current capability, and gate drive compatibility. However, the package change from PLUS-220SMD surface mount to TO-247-3 through-hole requires circuit board layout modification. Gate drive circuits may require adjustment due to increased gate charge and input capacitance.

Q: What are the key electrical differences between these devices?

A: The APT24F50B provides 2A higher continuous drain current and 30 mOhm lower on-state resistance. Gate charge is 40 nC higher, and input capacitance is 1000 pF higher. Both devices share identical 500V voltage rating and -55°C to 150°C operating temperature range.

Q: Is the APT24F50B suitable for the same power dissipation levels?

A: Both devices are rated for similar power dissipation (350W for IXFV22N50PS, 335W for APT24F50B). The TO-247 package of the APT24F50B provides different thermal characteristics than the PLUS-220SMD package. Thermal management design must account for package-specific heat dissipation paths.

Q: What compliance certifications apply to the APT24F50B?

A: The APT24F50B carries RoHS3 compliance, REACH Unaffected status, and EAR99 export classification. The device maintains active product status with established supply chain availability.

Q: Are there any gate drive circuit considerations for substitution?

A: The APT24F50B requires higher gate charge (90 nC versus 50 nC) and exhibits higher input capacitance (3630 pF versus 2630 pF). Gate drive circuits must deliver sufficient current to charge the gate within required switching time parameters. Existing gate drive designs may require validation or modification.

Q: What is the moisture sensitivity level for both devices?

A: Both the IXFV22N50PS and APT24F50B carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage and handling.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message