IXFV20N80PS N-Channel 800V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV20N80PS is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage and 20A continuous drain current in a surface mount PLUS-220SMD package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 500W at the case temperature.

Due to its obsolete status, equivalent substitute parts with matching or superior electrical characteristics and compatible thermal performance are required for ongoing applications.

Substiute Parts

IXFV20N80PS

IXYSIn Stock: 796IXFV20N80PS Datasheet

Current PartRFQ

APT22F80B

Microchip TechnologyIn Stock: 944APT22F80B Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFV20N80PS is determined by the following critical electrical and thermal parameters:

Mandatory Matching Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• N-Channel MOSFET technology
• Operating temperature range: -55°C to 150°C minimum
• Gate-Source voltage rating: ±30V

Performance Compatibility Criteria:

• Continuous drain current (Id): Equal to or greater than 20A
• On-state resistance (Rds On): Equal to or lower than 520mOhm at rated conditions
• Power dissipation capability: Equal to or greater than 500W
• Gate charge (Qg): Comparable switching characteristics
• Input capacitance (Ciss): Similar gate drive requirements

The APT22F80B from Microchip Technology meets all mandatory criteria and exceeds performance specifications in drain current (23A), power dissipation (625W), and on-state resistance (500mOhm). However, packaging differs from the original surface mount configuration, requiring mechanical and thermal design review.

Parameter Comparison

Engineering Selection Recommendations

APT22F80B Selection Basis:

The APT22F80B qualifies as an electrical and thermal equivalent to the IXFV20N80PS based on the following factors:

1. Voltage Rating Compliance: Both devices are rated for 800V Vdss, meeting the primary voltage specification requirement.

2. Current Capacity: The APT22F80B provides 23A continuous drain current, exceeding the original 20A specification by 15%, ensuring adequate current handling margin.

3. Thermal Performance: Power dissipation capability increases from 500W to 625W, providing improved thermal headroom in high-power applications.

4. On-State Resistance: The APT22F80B exhibits 500mOhm Rds On compared to 520mOhm in the original part, representing a 3.8% improvement in conduction losses.

5. Temperature Range: Operating temperature range of -55°C to 150°C matches the original specification exactly.

6. Product Status: The APT22F80B is active and in production, ensuring long-term availability and supply chain continuity.

7. Compliance: RoHS3 compliance and REACH unaffected status confirm regulatory alignment.

Design Consideration: The transition from surface mount PLUS-220SMD to through-hole TO-247-3 packaging requires PCB layout and thermal management redesign. The TO-247 package provides superior thermal coupling through direct case contact with heatsinks, potentially improving thermal performance in applications with active cooling.

Frequently Asked Questions (FAQ)

Q: Can the APT22F80B directly replace the IXFV20N80PS without circuit modification?

A: Electrical substitution is valid based on matching voltage ratings, gate-source characteristics, and operating temperature range. However, packaging differs fundamentally: PLUS-220SMD is surface mount while TO-247-3 is through-hole. PCB layout and mounting hardware must be redesigned accordingly. Gate drive circuits require no modification due to comparable gate charge and input capacitance values.

Q: What is the significance of the higher gate charge (150nC vs. 86nC) in the APT22F80B?

A: Higher gate charge increases the energy required to switch the device on and off. This results in slightly longer switching times and increased gate drive power consumption. Gate drive circuits must supply sufficient current to charge the gate within the required switching time window. Existing gate drive designs should be evaluated for current capability.

Q: Does the improved on-state resistance (500mOhm vs. 520mOhm) provide measurable benefits?

A: Yes. The 3.8% reduction in Rds On decreases conduction losses proportionally. In a 20A application, this translates to approximately 8W lower power dissipation (I²R loss reduction: 400A² × 0.020mOhm = 8W). This benefit is most significant in continuous high-current operation.

Q: Is the TO-247-3 package suitable for surface mount assembly?

A: No. TO-247-3 is a through-hole package requiring mechanical insertion and wave or selective soldering. Surface mount assembly equipment cannot process this package type. Production processes must be modified to accommodate through-hole insertion and soldering.

Q: What thermal advantages does the TO-247 package provide over PLUS-220SMD?

A: The TO-247 package includes a metal mounting tab that directly contacts a heatsink, providing a low-thermal-resistance path for heat dissipation. PLUS-220SMD relies on PCB thermal vias and copper planes for heat spreading. In applications requiring active heatsinking, TO-247 typically provides superior thermal performance due to direct case-to-sink contact.

Q: Are there any gate drive circuit compatibility concerns?

A: Gate drive compatibility is maintained. Both devices operate with ±30V maximum gate-source voltage and exhibit similar threshold voltage characteristics (5V @ specified current). The primary difference is gate charge magnitude, which affects switching speed and drive power consumption but not circuit topology or voltage levels.

Q: What is the moisture sensitivity level (MSL) for both devices?

A: Both the IXFV20N80PS and APT22F80B carry MSL 1 (Unlimited), indicating no moisture sensitivity. These devices can be stored and handled without desiccant packaging or time-limited shelf life restrictions.