IXFV18N60P N-Channel 600V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV18N60P is an N-Channel 600V 18A MOSFET manufactured by IXYS in the HiPerFET™ and PolarHT™ series. This device is rated for 360W power dissipation and features a PLUS220 through-hole package configuration. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On) @ 10V	400	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	5.5	V
Gate Charge (Qg) @ 10V	50	nC
Input Capacitance (Ciss) @ 25V	2500	pF
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-220-3, Short Tab	—

Substitute Part Grouping Explanation

Substitution of the IXFV18N60P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 18A or greater
On-State Resistance (Rds On): 400mOhm or lower at 10V gate drive
Gate Threshold Voltage (Vgs(th)): Compatible with 10V drive voltage
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole
Package Compatibility: TO-220-3 or equivalent footprint

Substitution Logic: Parts are grouped into two categories based on current rating and thermal performance:

Direct Current Equivalents (18A+): Parts meeting or exceeding the 18A continuous drain current specification with comparable Rds On characteristics. These provide direct functional replacement with minimal circuit redesign.
Reduced Current Alternatives (11A–17A): Parts with lower continuous drain current ratings but matching voltage class and thermal operating range. These are suitable for applications where the full 18A capability is not required or where thermal management is enhanced through design modifications.

All substitute parts maintain the 600V Vdss rating, -55°C to 150°C operating temperature range, and through-hole mounting configuration.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Dissipation (W)	Package	Product Status
IXFV18N60P	IXYS	600	18	400	5.5	50	2500	360	TO-220-3, Short Tab	Obsolete
APT18F60B	Microchip Technology	600	19	390	5	90	3550	335	TO-247-3	Active
FDPF17N60NT	onsemi	600	17	340	5	65	3040	62.5	TO-220-3 Full Pack	Active
STP13N60M2	STMicroelectronics	600	11	380	4	17	580	110	TO-220-3	Active
STP13NM60ND	STMicroelectronics	600	11	380	5	24.5	845	109	TO-220-3	Active
FCP11N60	onsemi	600	11	380	5	52	1490	125	TO-220-3	Not For New Designs
FCP380N60E	Fairchild Semiconductor	600	10.2	380	3.5	45	1770	106	TO-220-3	Active
AOT11S60L	Alpha & Omega Semiconductor Inc.	600	11	399	4.1	11	545	178	TO-220-3	Not For New Designs
SIHA12N60E-E3	Vishay Siliconix	600	12	380	4	58	937	33	TO-220-3 Full Pack	Active
SPP11N60C3XKSA1	Infineon Technologies	650	11	380	3.9	60	1200	125	TO-220-3	Active

Engineering Selection Recommendations

Primary Substitute: APT18F60B (Microchip Technology)

The APT18F60B is the closest functional equivalent to the IXFV18N60P. It provides 19A continuous drain current at 600V, exceeding the original specification by 1A. The on-state resistance of 390mOhm is marginally lower, providing improved efficiency. The device is classified as Active, ensuring long-term availability and supply chain stability. The TO-247-3 package provides superior thermal performance compared to the TO-220-3 configuration, though PCB layout modifications are required for package compatibility.

Secondary Substitutes: FDPF17N60NT (onsemi)

The FDPF17N60NT delivers 17A continuous drain current at 600V with an on-state resistance of 340mOhm, representing improved switching characteristics. This device is Active and available in TO-220-3 Full Pack configuration, maintaining mechanical compatibility with the original PLUS220 footprint. The reduced power dissipation rating (62.5W) indicates enhanced thermal efficiency. This part is suitable for applications where the full 18A capability is not required or where thermal management is enhanced.

Tertiary Substitutes: STP13N60M2, STP13NM60ND (STMicroelectronics)

Both STMicroelectronics devices provide 11A continuous drain current at 600V with 380mOhm on-state resistance. These parts are Active and available in standard TO-220-3 packages. The STP13N60M2 features significantly lower gate charge (17nC) compared to the original specification (50nC), resulting in faster switching performance. The STP13NM60ND provides comparable performance with slightly higher gate charge (24.5nC). Both are suitable for reduced-current applications or designs with enhanced thermal management.

Alternative Substitutes: FCP380N60E (Fairchild Semiconductor), SIHA12N60E-E3 (Vishay Siliconix)

The FCP380N60E is Active and provides 10.2A continuous drain current with 380mOhm on-state resistance in TO-220-3 configuration. The SIHA12N60E-E3 is Active and rated for 12A continuous drain current with 380mOhm on-state resistance in TO-220-3 Full Pack configuration. Both devices maintain the 600V voltage rating and -55°C to 150°C operating temperature range. These parts are suitable for applications requiring reduced current capacity with enhanced thermal performance.

Voltage-Elevated Alternative: SPP11N60C3XKSA1 (Infineon Technologies)

The SPP11N60C3XKSA1 provides 650V drain-source voltage rating with 11A continuous drain current. This device is Active and available in TO-220-3 configuration. The elevated voltage rating provides additional design margin for transient overvoltage conditions. Gate charge is 60nC at 10V, comparable to the original specification. This part is suitable for applications requiring enhanced voltage headroom.

Frequently Asked Questions (FAQ)

Q: Can the APT18F60B directly replace the IXFV18N60P without circuit modifications?

A: The APT18F60B provides electrical equivalence in terms of voltage rating, current capacity, and on-state resistance. However, the TO-247-3 package differs from the TO-220-3 Short Tab configuration. PCB layout modifications are required to accommodate the different pin spacing and thermal tab geometry. Gate drive circuitry compatibility should be verified, as the APT18F60B features higher gate charge (90nC vs. 50nC).

Q: What is the impact of using a lower-current substitute such as STP13N60M2 (11A) in place of the IXFV18N60P (18A)?

A: Lower-current substitutes are suitable only for applications where the maximum drain current does not exceed the substitute device rating. The STP13N60M2 is rated for 11A continuous drain current; applications requiring sustained currents above this level will result in thermal stress and potential device failure. Thermal management design must be re-evaluated to ensure adequate heat dissipation at the reduced power rating.

Q: Are all substitute parts RoHS3 compliant?

A: Most substitute parts listed are RoHS3 compliant. The FCP380N60E (Fairchild Semiconductor) does not include RoHS status in the provided specifications. Verification of RoHS compliance is required for applications subject to regulatory requirements.

Q: What is the significance of gate charge (Qg) differences between the IXFV18N60P and substitute parts?

A: Gate charge determines the energy required to switch the device and influences switching speed. The IXFV18N60P specifies 50nC at 10V. Substitute parts range from 11nC (AOT11S60L) to 90nC (APT18F60B). Lower gate charge enables faster switching and reduced driver power dissipation. Higher gate charge requires more driver current but may provide improved noise immunity. Gate driver circuit design must accommodate the substitute device's gate charge specification.

Q: Can the SPP11N60C3XKSA1 (650V) be used in applications designed for 600V devices?

A: The SPP11N60C3XKSA1 with 650V rating provides additional voltage margin and is electrically compatible with 600V circuit designs. The elevated voltage rating does not create incompatibility; however, the reduced current capacity (11A vs. 18A) must be verified against application requirements. This device is suitable for applications requiring enhanced transient overvoltage protection.

Q: What packaging considerations apply when substituting TO-220-3 Full Pack variants?

A: TO-220-3 Full Pack variants (FDPF17N60NT, SIHA12N60E-E3) feature extended lead frames compared to standard TO-220-3 packages. These devices maintain the same pin spacing and thermal tab configuration but provide enhanced mechanical robustness. PCB footprints designed for standard TO-220-3 packages accommodate Full Pack variants without modification.

Q: Are there thermal performance differences between the IXFV18N60P and substitute parts?

A: Thermal performance is determined by power dissipation rating and on-state resistance. The IXFV18N60P is rated for 360W power dissipation. Substitute parts range from 33W (SIHA12N60E-E3) to 335W (APT18F60B). Lower power dissipation ratings indicate reduced thermal capacity; applications must ensure that actual power dissipation remains within the substitute device specification. On-state resistance values (380–400mOhm) are comparable across all substitutes, indicating similar conduction losses at rated current.

Q: Which substitute part is recommended for new design implementations?

A: For new designs, selection should prioritize Active status devices with established supply chain availability. The APT18F60B (Microchip Technology, Active) provides the closest electrical equivalence with 19A current rating and 390mOhm on-state resistance. The FDPF17N60NT (onsemi, Active) offers 17A current rating with improved on-state resistance (340mOhm) and maintains TO-220-3 package compatibility. Both devices are recommended for new implementations requiring 600V, high-current N-Channel MOSFET functionality.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message