IXFV16N80PS Equivalent & Substitute Parts

Part Overview

The IXFV16N80PS is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 16A continuous drain current at 25°C. This device is housed in a PLUS-220SMD surface mount package and is designed for high-voltage switching applications requiring compact form factors. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IXFV16N80PS

IXYSIn Stock: 1040IXFV16N80PS Datasheet

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APT17F80B

Microchip TechnologyIn Stock: 864APT17F80B Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFV16N80PS is determined by electrical parameter compatibility within the 800V MOSFET category. The critical parameters governing substitution are:

Electrical Compatibility Criteria:

• Drain-to-source voltage rating (Vdss) must equal or exceed 800V
• Continuous drain current (Id) must meet or exceed 16A at 25°C
• Gate threshold voltage (Vgs(th)) must be compatible with 5V gate drive circuits
• Maximum gate voltage (Vgs Max) must accommodate ±30V operation
• Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

• Package type determines PCB layout and thermal management approach
• Surface mount packages (PLUS-220SMD) differ fundamentally from through-hole packages (TO-247)

The APT17F80B from Microchip Technology meets the electrical requirements for 800V operation with enhanced current rating (18A) and improved power dissipation (500W). However, the package transition from PLUS-220SMD to TO-247 represents a mechanical substitution requiring PCB redesign.

Parameter Comparison

Engineering Selection Recommendations

APT17F80B Selection Basis:

The APT17F80B qualifies as an electrical equivalent to the IXFV16N80PS based on matching voltage rating (800V Vdss) and exceeding current requirements (18A versus 16A). Both devices operate across the identical temperature range (-55°C to 150°C) and share compatible gate drive characteristics (5V threshold voltage, ±30V maximum gate voltage).

The APT17F80B holds active product status from Microchip Technology, ensuring ongoing availability and technical support. The device carries ROHS3 compliance certification, providing environmental regulatory alignment for new designs.

Package Transition Consideration:

The substitution requires transition from PLUS-220SMD surface mount to TO-247-3 through-hole packaging. This change necessitates PCB layout modification and thermal management redesign. The TO-247 package provides enhanced thermal performance through direct lead contact, potentially improving heat dissipation in applications with adequate board space.

Electrical Performance Differential:

The APT17F80B exhibits lower on-state resistance (580mOhm at 9A versus 600mOhm at 500mA), reducing conduction losses. Higher gate charge (122nC versus 71nC) requires increased gate drive energy but remains compatible with standard 10V gate drive circuits. Lower input capacitance (3757pF versus 4600pF) reduces gate drive current demand.

Frequently Asked Questions (FAQ)

Q: Can the APT17F80B directly replace the IXFV16N80PS without circuit modification?

A: Electrical substitution is valid. Both devices operate at 800V with compatible gate drive requirements. However, package differences (PLUS-220SMD surface mount versus TO-247-3 through-hole) require PCB redesign. Footprint, mounting method, and thermal path modifications are necessary.

Q: What are the key electrical parameters that determine substitution validity?

A: Drain-to-source voltage (Vdss) must equal or exceed 800V. Continuous drain current (Id) must meet or exceed 16A at 25°C. Gate threshold voltage (Vgs(th)) must remain compatible with 5V gate drive circuits. Maximum gate voltage (Vgs Max) must accommodate ±30V operation. Operating temperature range must span -55°C to 150°C.

Q: How does the higher gate charge of APT17F80B (122nC) affect circuit design?

A: Higher gate charge increases the energy required per switching cycle. Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Standard 10V gate drivers remain compatible; however, switching frequency or drive current may require evaluation in high-frequency applications.

Q: What is the significance of the lower input capacitance in APT17F80B?

A: Lower input capacitance (3757pF versus 4600pF) reduces the capacitive current drawn from the gate driver during switching transitions. This reduces gate drive power dissipation and allows faster switching transitions with equivalent drive circuit capability.

Q: Does the improved on-state resistance of APT17F80B provide design benefits?

A: Lower on-state resistance (580mOhm versus 600mOhm) reduces conduction losses during the on-state, lowering power dissipation and improving thermal performance. This benefit is most significant in high-current or high-duty-cycle applications.

Q: Are there compliance or regulatory differences between these devices?

A: The IXFV16N80PS is classified as obsolete with REACH Unaffected status. The APT17F80B is active with ROHS3 compliance certification, providing regulatory alignment for new product designs and long-term availability assurance.

Q: What thermal management differences exist between PLUS-220SMD and TO-247-3 packages?

A: PLUS-220SMD is a surface mount package with thermal performance dependent on PCB copper area and via placement. TO-247-3 is a through-hole package with direct lead contact to the PCB, typically providing superior thermal performance when adequate board space is available. Thermal path design must be evaluated for each application.