IXFV16N80P Equivalent & Substitute Parts

Part Overview

The IXFV16N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 16A continuous drain current at 25°C. This device is packaged in a PLUS220 (TO-220-3 Short Tab) through-hole configuration and is part of the HiPerFET™ Polar series. The IXFV16N80P is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	16	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	600 mOhm @ 500 mA, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5	V @ 4 mA
Gate Charge (Qg) @ Vgs	71	nC @ 10V
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ Vds	4600	pF @ 25V
Power Dissipation (Max)	460	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package Type	TO-220-3, Short Tab	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFV16N80P is determined by strict alignment of electrical and mechanical parameters. The following criteria establish valid substitute relationships:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 800V
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide Semiconductor
Mounting Type: Must be Through Hole
Operating Temperature Range: Must support -55°C to 150°C minimum
Gate Voltage (Vgs Max): Must support ±30V or greater
RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts rated at or above 16A are electrically compatible
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit requirements
Power Dissipation: Higher ratings provide thermal margin
Package Configuration: TO-220-3 variants are mechanically compatible

All substitute parts listed meet the primary substitution criteria. Variations in secondary parameters reflect design trade-offs and performance enhancements available from alternative manufacturers.

Parameter Comparison

Parameter	IXFV16N80P	APT17F80B	R8010ANX	SPP11N80C3XKSA1	STP13N80K5
Manufacturer	IXYS	Microchip Technology	Rohm Semiconductor	Infineon Technologies	STMicroelectronics
Vdss (V)	800	800	800	800	800
Id @ 25°C (A)	16	18	10	11	12
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ 10V (mOhm)	600 @ 500mA	580 @ 9A	560 @ 5A	450 @ 7.1A	450 @ 6A
Vgs(th) (V)	5 @ 4mA	5 @ 1mA	5 @ 1mA	3.9 @ 680µA	5 @ 100µA
Gate Charge Qg (nC)	71 @ 10V	122 @ 10V	62 @ 10V	85 @ 10V	29 @ 10V
Vgs Max (V)	±30	±30	±30	±20	±30
Ciss (pF)	4600 @ 25V	3757 @ 25V	1750 @ 25V	1600 @ 100V	870 @ 100V
Power Dissipation (W)	460	500	40	156	190
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package Type	TO-220-3, Short Tab	TO-247-3	TO-220-3 Full Pack	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

APT17F80B (Microchip Technology)

The APT17F80B is an active product offering 18A continuous drain current, exceeding the IXFV16N80P specification by 2A. This part provides improved thermal performance with 500W maximum power dissipation. The APT17F80B is packaged in TO-247-3, which differs mechanically from the PLUS220 package but maintains through-hole mounting compatibility. Gate charge is elevated at 122 nC, requiring verification of drive circuit capability. This substitute is suitable for applications where increased current capacity and thermal margin are beneficial and package transition is feasible.

R8010ANX (Rohm Semiconductor)

The R8010ANX is an active product rated for 10A continuous drain current, below the IXFV16N80P specification. Power dissipation is limited to 40W, significantly lower than the original part. This substitute is applicable only in applications where the 16A current requirement can be reduced or where multiple devices are paralleled. The R8010ANX offers the lowest input capacitance at 1750 pF, reducing gate drive requirements. This part is suitable for lower-power variants of existing designs.

SPP11N80C3XKSA1 (Infineon Technologies)

The SPP11N80C3XKSA1 is an active product from the CoolMOS™ series, rated for 11A continuous drain current. This part provides superior on-resistance performance at 450 mOhm, reducing conduction losses compared to the IXFV16N80P. Gate charge is 85 nC, and input capacitance is 1600 pF, both favorable for drive circuit efficiency. The maximum gate voltage is ±20V, which is lower than the original ±30V specification. This substitute is recommended for applications prioritizing efficiency and where gate voltage tolerance can be accommodated.

STP13N80K5 (STMicroelectronics)

The STP13N80K5 is an active product from the SuperMESH5™ series, rated for 12A continuous drain current. This part delivers the lowest gate charge at 29 nC and the lowest input capacitance at 870 pF, providing significant advantages in switching speed and drive circuit simplification. On-resistance is 450 mOhm, matching the SPP11N80C3XKSA1. Power dissipation is 190W, providing adequate thermal performance for moderate-power applications. This substitute is recommended as the primary alternative for new designs requiring improved switching characteristics and reduced drive complexity.

All substitute parts maintain ROHS3 compliance and support the full -55°C to 150°C operating temperature range of the original device.

Frequently Asked Questions (FAQ)

Q: Can the APT17F80B replace the IXFV16N80P in existing PCB layouts?

A: The APT17F80B uses TO-247-3 packaging, which differs from the PLUS220 (TO-220-3 Short Tab) package of the IXFV16N80P. While both are through-hole devices, pin spacing and mechanical dimensions are not identical. PCB layout modification is required. Electrical compatibility is confirmed for all rated parameters.

Q: Why does the R8010ANX have lower power dissipation than the IXFV16N80P?

A: The R8010ANX is rated for 10A continuous drain current, compared to 16A for the IXFV16N80P. Power dissipation is a function of current rating and thermal design. The R8010ANX is suitable only for applications where current requirements do not exceed 10A or where multiple devices are used in parallel configurations.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces drive circuit power consumption and enables faster switching. The STP13N80K5 at 29 nC requires significantly less drive energy than the IXFV16N80P at 71 nC. Drive circuit capability must be verified for each substitute.

Q: Are all substitute parts suitable for direct replacement without circuit modification?

A: Electrical substitution is confirmed for all parts listed, provided that continuous drain current requirements do not exceed the substitute part rating. However, package differences (TO-247 vs. TO-220) require PCB layout evaluation. Gate charge and input capacitance variations may require drive circuit verification. Thermal design must account for power dissipation differences.

Q: Which substitute part offers the best overall performance improvement?

A: The STP13N80K5 provides the most significant performance enhancements, with the lowest gate charge (29 nC) and input capacitance (870 pF), reducing switching losses and drive circuit complexity. The SPP11N80C3XKSA1 offers comparable on-resistance performance with slightly higher gate charge. Selection depends on application priorities: efficiency, thermal margin, or drive simplicity.

Q: Is the ±20V maximum gate voltage of the SPP11N80C3XKSA1 compatible with ±30V drive circuits?

A: The SPP11N80C3XKSA1 is rated for ±20V maximum gate voltage. Application of ±30V gate voltage exceeds the device specification and may cause gate oxide degradation. Drive circuits must be verified to operate within ±20V limits when using this substitute.

Q: What is the impact of lower input capacitance on circuit design?

A: Lower input capacitance (Ciss) reduces the charge required to drive the gate and decreases switching time. Substitute parts with lower Ciss values (R8010ANX at 1750 pF, SPP11N80C3XKSA1 at 1600 pF, STP13N80K5 at 870 pF) enable faster switching and reduced EMI compared to the IXFV16N80P at 4600 pF. Drive circuit current requirements are correspondingly reduced.

Q: Are all substitute parts available in the same packaging options?

A: No. The IXFV16N80P is available in PLUS220 (TO-220-3 Short Tab). Substitute parts are available in TO-247-3 (APT17F80B), TO-220-3 Full Pack (R8010ANX), and standard TO-220-3 (SPP11N80C3XKSA1, STP13N80K5). Package selection affects PCB layout and thermal management design.

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