IXFV14N80PS N-Channel 800V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV14N80PS is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 14A continuous drain current at 25°C. This device is housed in a PLUS-220SMD surface mount package and is designed for high-voltage switching applications requiring 400W maximum power dissipation. The IXFV14N80PS is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating different packaging formats.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	14	A
Power Dissipation (Max)	400	W
On-State Resistance (Rds On Max) @ 10V	720	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5.5	V @ 4mA
Gate Charge (Qg Max) @ 10V	61	nC
Input Capacitance (Ciss Max) @ 25V	3900	pF
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	PLUS-220SMD
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the IXFV14N80PS is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 14A at 25°C
Power Dissipation: Must equal or exceed 400W
Gate Threshold Voltage (Vgs(th)): Must be compatible within ±30V maximum gate voltage specification
Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Compatibility Factors:

FET Type: N-Channel MOSFET technology
On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 720mOhm @ 10V are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values at or below 61nC @ 10V are acceptable
Input Capacitance (Ciss): Lower values reduce input impedance; values at or below 3900pF @ 25V are acceptable

Packaging Consideration: The IXFV14N80PS uses PLUS-220SMD surface mount packaging. Substitute parts may employ alternative mounting technologies (surface mount or through-hole) provided the electrical parameters remain within specified tolerances. Package differences require circuit board redesign and thermal management re-evaluation.

Parameter Comparison

Parameter	IXFV14N80PS (Main)	APT11F80B (Substitute)	Unit	Compatibility
Drain-to-Source Voltage (Vdss)	800	800	V	Equal
Continuous Drain Current (Id) @ 25°C	14	12	A	Substitute lower by 2A
Power Dissipation (Max)	400	337	W	Substitute lower by 63W
On-State Resistance (Rds On Max) @ 10V	720 @ 500mA	900 @ 6A	mOhm	Substitute higher by 180mOhm
Gate Threshold Voltage (Vgs(th) Max)	5.5 @ 4mA	5.0 @ 1mA	V	Substitute lower by 0.5V
Gate Charge (Qg Max) @ 10V	61	80	nC	Substitute higher by 19nC
Input Capacitance (Ciss Max) @ 25V	3900	2471	pF	Substitute lower by 1429pF
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)	Equal
Mounting Type	Surface Mount	Through Hole		Different package format
Package / Case	PLUS-220SMD	TO-247-3		Different package format
Product Status	Obsolete	Active		Substitute actively manufactured

Engineering Selection Recommendations

APT11F80B as Substitute for IXFV14N80PS:

The APT11F80B from Microchip Technology is an active product suitable for applications where the IXFV14N80PS is no longer available. This substitute maintains the critical 800V drain-to-source voltage rating and operates across the identical temperature range (-55°C to 150°C).

Electrical Trade-offs: The APT11F80B exhibits reduced continuous drain current (12A versus 14A) and lower maximum power dissipation (337W versus 400W). These reductions require thermal and current-handling analysis for applications operating at or near the original device's maximum ratings. The substitute demonstrates higher on-state resistance (900mOhm versus 720mOhm), resulting in increased conduction losses. Conversely, the APT11F80B provides lower input capacitance (2471pF versus 3900pF) and reduced gate charge (80nC versus 61nC), offering improved switching characteristics in high-frequency applications.

Packaging Consideration: The APT11F80B uses TO-247-3 through-hole packaging, requiring circuit board redesign compared to the PLUS-220SMD surface mount format of the original device. Thermal management strategies must be re-evaluated due to different package geometry and heat dissipation characteristics.

Compliance Status: The APT11F80B is RoHS3 compliant and maintains REACH unaffected status, consistent with the original part's regulatory classification. Both devices carry EAR99 export control designation.

Application Suitability: The APT11F80B is suitable for 800V switching applications where continuous drain current requirements do not exceed 12A and power dissipation remains below 337W. Applications requiring the full 14A rating or 400W dissipation of the original device require alternative solutions or parallel device configurations.

Frequently Asked Questions (FAQ)

Q: Can the APT11F80B directly replace the IXFV14N80PS in existing circuit boards?

A: No. The APT11F80B uses TO-247-3 through-hole packaging while the IXFV14N80PS uses PLUS-220SMD surface mount packaging. Circuit board layout and component footprints must be redesigned. Thermal management and mounting hardware differ between package types.

Q: What is the current rating difference between these devices?

A: The IXFV14N80PS is rated for 14A continuous drain current at 25°C, while the APT11F80B is rated for 12A. Applications requiring currents above 12A cannot use the APT11F80B as a direct substitute without additional design modifications such as parallel device configurations.

Q: How does the on-state resistance affect circuit performance?

A: The APT11F80B exhibits 900mOhm on-state resistance compared to 720mOhm for the IXFV14N80PS. This 25% increase results in higher conduction losses and increased heat generation. Thermal design calculations must account for this difference to ensure the device operates within safe junction temperature limits.

Q: Are there voltage rating differences between these devices?

A: No. Both devices are rated for 800V drain-to-source voltage and operate across identical temperature ranges (-55°C to 150°C). Voltage compatibility is maintained.

Q: What is the significance of the lower gate charge in the APT11F80B?

A: The APT11F80B has 80nC gate charge compared to 61nC for the IXFV14N80PS. Lower gate charge reduces the energy required to switch the device and decreases switching losses in high-frequency applications. This characteristic may offset some performance degradation from higher on-state resistance in certain circuit topologies.

Q: Does the APT11F80B have better availability than the IXFV14N80PS?

A: Yes. The IXFV14N80PS is classified as obsolete, while the APT11F80B is an active product from Microchip Technology. Active product status ensures ongoing manufacturing and supply chain availability.

Q: What compliance certifications apply to the APT11F80B?

A: The APT11F80B is RoHS3 compliant and REACH unaffected. Both certifications match the regulatory status of the original IXFV14N80PS device.

Q: Can I use multiple APT11F80B devices in parallel to achieve higher current ratings?

A: Parallel operation of MOSFETs requires careful circuit design to ensure balanced current distribution and thermal management. Gate drive circuits, PCB layout, and thermal coupling must be engineered to prevent device failure. Parallel configurations are outside the scope of direct substitution and require detailed application engineering.

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