IXFV14N80P Equivalent & Substitute Parts

Part Overview

The IXFV14N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 14A continuous drain current at 25°C. This device is packaged in a PLUS220 through-hole configuration and is part of the HiPerFET™ and PolarHT™ series. The component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	14	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	720	mOhm @ 500mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5.5	V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	61	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	3900	pF @ 25V
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFV14N80P is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 800V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Operating Temperature Range: -55°C to 150°C (exact match required)
Mounting Type: Through Hole (exact match required)

Allowable Variation Parameters:

Continuous Drain Current (Id): Substitute must equal or exceed 14A
Power Dissipation (Max): Substitute must equal or exceed 400W
Rds On (Max): Substitute must equal or be lower than 720mOhm
Gate Charge (Qg): Substitute must equal or be lower than 61nC
Input Capacitance (Ciss): Substitute must equal or be lower than 3900pF
Package / Case: TO-220-3 variants acceptable (including different tab configurations)

All identified substitute parts meet the critical matching parameters. Variations in current rating, power dissipation, and on-resistance reflect different device performance characteristics within the 800V N-Channel MOSFET category.

Parameter Comparison

Parameter	IXFV14N80P	APT11F80B	SPP06N80C3XKSA1	SPP08N80C3XKSA1	STP10NK80Z	STP12NK80Z
Manufacturer	IXYS	Microchip Technology	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	800	800
Id @ 25°C (A)	14	12	6	8	9	10.5
Drive Voltage (V)	10	10	10	10	10	10
Rds On (Max) (mOhm)	720 @ 500mA, 10V	900 @ 6A, 10V	900 @ 3.8A, 10V	650 @ 5.1A, 10V	900 @ 4.5A, 10V	750 @ 5.25A, 10V
Vgs(th) (Max) (V)	5.5 @ 4mA	5 @ 1mA	3.9 @ 250µA	3.9 @ 470µA	4.5 @ 100µA	4.5 @ 100µA
Gate Charge Qg (Max) (nC)	61 @ 10V	80 @ 10V	41 @ 10V	60 @ 10V	72 @ 10V	87 @ 10V
Vgs (Max) (V)	±30	±30	±20	±20	±30	±30
Ciss (Max) (pF)	3900 @ 25V	2471 @ 25V	785 @ 100V	1100 @ 100V	2180 @ 25V	2620 @ 25V
Power Dissipation (Max) (W)	400	337	83	104	190	190
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3, Short Tab	TO-247-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute Candidates:

SPP08N80C3XKSA1 (Infineon Technologies) is the most suitable substitute for applications where the IXFV14N80P is currently deployed. This device maintains the TO-220-3 package configuration, matches all critical electrical parameters at 800V, and provides 8A continuous drain current with 104W power dissipation. The SPP08N80C3XKSA1 is classified as Active and ROHS3 Compliant, ensuring long-term availability and regulatory compliance. The lower on-resistance of 650mOhm and reduced gate charge of 60nC provide improved switching efficiency compared to the original part.

STP10NK80Z (STMicroelectronics) serves as an alternative for applications requiring higher current capacity. Rated at 9A continuous drain current with 190W power dissipation, this device is Active and ROHS3 Compliant. The TO-220-3 package maintains mechanical compatibility with existing PCB layouts.

STP12NK80Z (STMicroelectronics) provides the closest current rating match at 10.5A continuous drain current. Although classified as Not For New Designs, this part remains available with 3430 units in stock and ROHS3 Compliance. The 750mOhm on-resistance and 190W power dissipation support high-current applications.

APT11F80B (Microchip Technology) offers 12A continuous drain current in a TO-247-3 package. This device is Active and ROHS3 Compliant. The TO-247 package requires PCB layout modification but provides superior thermal performance with 337W power dissipation.

Lower Current Alternatives:

SPP06N80C3XKSA1 (Infineon Technologies) is suitable for applications where 6A continuous drain current is sufficient. This device is Active, ROHS3 Compliant, and offers the lowest on-resistance at 900mOhm with minimal gate charge of 41nC. The reduced power dissipation of 83W indicates suitability for lower-power circuit implementations.

Product Status Considerations:

The IXFV14N80P is classified as Obsolete. All recommended substitutes are either Active or Not For New Designs, ensuring continued availability and manufacturing support. For new design implementations, selection should prioritize Active status devices: SPP08N80C3XKSA1, STP10NK80Z, APT11F80B, and SPP06N80C3XKSA1.

Frequently Asked Questions (FAQ)

Q: Can the SPP08N80C3XKSA1 directly replace the IXFV14N80P in existing designs?

A: The SPP08N80C3XKSA1 maintains electrical compatibility at 800V with N-Channel MOSFET technology and TO-220-3 package configuration. The 8A continuous drain current is lower than the original 14A rating. Direct substitution is valid only when the application circuit operates at or below 8A continuous drain current. PCB layout remains unchanged due to identical package geometry.

Q: What is the difference between TO-220-3 and TO-247-3 packages?

A: Both are through-hole packages for N-Channel MOSFETs with three leads (Gate, Drain, Source). The TO-247-3 package (used by APT11F80B) provides larger surface area and improved thermal dissipation compared to TO-220-3. TO-247-3 requires different PCB footprint and mounting hardware. TO-220-3 packages are mechanically interchangeable across all listed substitutes except APT11F80B.

Q: Why does the SPP06N80C3XKSA1 have lower power dissipation than the IXFV14N80P?

A: Power dissipation is directly related to continuous drain current rating and on-resistance characteristics. The SPP06N80C3XKSA1 is rated for 6A continuous drain current compared to the IXFV14N80P at 14A. Lower current capacity results in proportionally lower power dissipation (83W versus 400W). This device is suitable only for applications requiring 6A or less.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed are ROHS3 Compliant. The IXFV14N80P RoHS status is not specified in available documentation. All substitutes meet current regulatory requirements for hazardous substance restrictions.

Q: What does "Not For New Designs" status mean for the STP12NK80Z?

A: This classification indicates the manufacturer no longer recommends this part for new circuit designs, though existing inventory remains available for replacement and repair applications. For new designs, select from Active status devices: SPP08N80C3XKSA1, STP10NK80Z, APT11F80B, or SPP06N80C3XKSA1.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The SPP08N80C3XKSA1 at 60nC is comparable to the original 61nC. The SPP06N80C3XKSA1 at 41nC provides faster switching with reduced driver power requirements. Higher values (APT11F80B at 80nC, STP12NK80Z at 87nC) require more driver current but remain within acceptable switching performance ranges.

Q: Can on-resistance (Rds On) variations affect circuit operation?

A: On-resistance directly impacts conduction losses and heat generation. Lower on-resistance reduces power dissipation during conduction. The SPP08N80C3XKSA1 at 650mOhm provides superior efficiency compared to the original 720mOhm. Higher values (SPP06N80C3XKSA1 and STP10NK80Z at 900mOhm) increase conduction losses proportionally. Selection depends on thermal management capability and efficiency requirements of the application circuit.

Q: What inventory considerations apply to substitute selection?

A: SPP08N80C3XKSA1 has 7050 units in stock, providing the highest availability. STP10NK80Z has 8058 units available. SPP06N80C3XKSA1 has 3300 units. APT11F80B has 673 units. STP12NK80Z has 3430 units. Inventory levels support both immediate replacement needs and long-term production requirements across all substitute options.

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