IXFV12N80PS N-Channel 800V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFV12N80PS is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 12A continuous drain current at 25°C. This device is packaged in the PLUS-220SMD surface mount configuration and is designed for high-voltage switching applications requiring 360W maximum power dissipation. The IXFV12N80PS is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Substiute Parts

IXFV12N80PS

IXYSIn Stock: 1155IXFV12N80PS Datasheet

Current PartRFQ

APT11F80B

Microchip TechnologyIn Stock: 687APT11F80B Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFV12N80PS is determined by electrical parameter equivalence across the following critical specifications:

Electrical Matching Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• Continuous Drain Current (Id): 12A minimum at 25°C
• Gate Drive Voltage: 10V
• Gate Threshold Voltage (Vgs(th)): Within ±30V maximum gate voltage specification
• Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Considerations:

• Mounting type (surface mount vs. through-hole) affects PCB layout and thermal management
• Package form factor determines footprint and thermal performance characteristics

The APT11F80B from Microchip Technology meets the electrical parameter requirements for substitution. While this device employs a through-hole TO-247 package rather than the surface mount PLUS-220SMD configuration, the electrical specifications align within acceptable tolerances for high-voltage MOSFET applications.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IXFV12N80PS is classified as obsolete. The APT11F80B is an active product from Microchip Technology, ensuring ongoing availability, technical support, and compliance with current regulatory standards.

Compliance and Certification: Both devices maintain REACH Unaffected status and Moisture Sensitivity Level 1 (Unlimited), indicating equivalent environmental compliance. The APT11F80B carries RoHS3 Compliant certification, providing additional assurance of regulatory alignment for new designs.

Electrical Equivalence: The APT11F80B satisfies all critical electrical parameters required for substitution:

• Identical Vdss (800V) and Id (12A) ratings
• Matching gate drive voltage (10V)
• Compatible gate threshold voltage and maximum gate voltage specifications
• Operating temperature range alignment (-55°C to 150°C)

Package and Mounting Implications: The transition from PLUS-220SMD (surface mount) to TO-247-3 (through-hole) requires PCB redesign. The TO-247-3 package provides superior thermal performance through direct lead contact, potentially offsetting the slightly lower maximum power dissipation rating (337W vs. 360W).

Gate Charge and Input Capacitance: The APT11F80B exhibits higher gate charge (80 nC vs. 51 nC) and lower input capacitance (2471 pF vs. 2800 pF). These differences affect switching speed and gate drive circuit requirements but remain within acceptable operational parameters for 800V MOSFET applications.

Frequently Asked Questions (FAQ)

Q: Can the APT11F80B directly replace the IXFV12N80PS without circuit modification?

A: Electrical substitution is valid based on matching Vdss, Id, and gate drive specifications. However, the package change from PLUS-220SMD to TO-247-3 requires PCB layout modification. Gate drive circuits may require adjustment due to the 29 nC increase in gate charge.

Q: What are the implications of the higher gate charge in the APT11F80B?

A: The APT11F80B requires 80 nC of gate charge compared to 51 nC for the IXFV12N80PS. This increases gate drive power consumption and may extend switching transition times. Gate driver selection and timing parameters should be evaluated for the specific application.

Q: Does the lower input capacitance of the APT11F80B affect circuit performance?

A: The APT11F80B input capacitance is 2471 pF versus 2800 pF for the IXFV12N80PS. This 329 pF reduction improves high-frequency switching characteristics and reduces gate drive circuit loading, generally providing performance benefits in switching applications.

Q: How does the package transition from surface mount to through-hole affect thermal management?

A: The TO-247-3 through-hole package provides direct lead-to-PCB thermal coupling, typically offering superior thermal performance compared to surface mount configurations. Despite the 23W reduction in maximum power dissipation rating, the through-hole package may deliver equivalent or improved thermal performance in practical applications with proper PCB thermal design.

Q: Are there any compliance or regulatory differences between these devices?

A: Both devices maintain REACH Unaffected status and MSL 1 (Unlimited) ratings. The APT11F80B carries RoHS3 Compliant certification, providing additional regulatory assurance for new product designs. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: What is the significance of the different Rds On measurement conditions?

A: The IXFV12N80PS specifies Rds On at 500mA, 10V (850 mOhm), while the APT11F80B specifies it at 6A, 10V (900 mOhm). The APT11F80B measurement at higher current provides a more representative value for typical operating conditions. The 50 mOhm difference is within acceptable tolerance for 800V MOSFET applications.

Q: Can the APT11F80B be used in existing IXFV12N80PS designs without redesign?

A: Electrical substitution is feasible, but PCB redesign is required due to package incompatibility. The through-hole TO-247-3 footprint differs fundamentally from the surface mount PLUS-220SMD configuration. Gate drive circuit evaluation is recommended to accommodate the increased gate charge specification.