IXFT80N20Q Equivalent & Substitute Parts

Part Overview

The IXFT80N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 80A continuous drain current in a Surface Mount TO-268AA package. This device is classified as Obsolete, making identification of functionally compatible alternatives necessary for ongoing design support and procurement planning. The HiPerFET™ series designation indicates optimized performance characteristics for high-efficiency switching applications.

Substiute Parts

IXFT80N20Q

IXYSIn Stock: 1166IXFT80N20Q Datasheet

Current PartRFQ

IXTT82N25P

IXYSIn Stock: 971IXTT82N25P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT80N20Q is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support the application's maximum drain-to-source voltage requirement. The IXFT80N20Q operates at 200V Vdss. Substitutes with equal or higher voltage ratings are acceptable.

Current Handling Capacity: The substitute must deliver continuous drain current equal to or exceeding 80A at 25°C to maintain thermal and electrical performance margins.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. The IXFT80N20Q specifies 28mOhm maximum at 500mA, 10V gate drive. Substitutes with comparable or lower Rds On values maintain equivalent efficiency characteristics.

Gate Drive Requirements: Both devices operate with 10V drive voltage, ensuring compatibility with existing gate driver circuits.

Package Compatibility: Both the main part and substitute must use the TO-268AA Surface Mount package to ensure mechanical and thermal interface compatibility.

Temperature Range: Operating temperature range of -55°C to 150°C (TJ) must be maintained or exceeded.

The IXTT82N25P meets these substitution criteria through equivalent package geometry, compatible gate drive voltage, and superior voltage and current ratings with acceptable Rds On characteristics.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IXFT80N20Q is classified as Obsolete, while the IXTT82N25P is Active. For new designs and long-term procurement, the IXTT82N25P provides assured availability and ongoing manufacturer support.

Compliance and Certifications: Both devices carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring equivalent regulatory treatment. The IXTT82N25P includes RoHS3 Compliance and REACH Unaffected status, providing additional environmental compliance documentation for applications requiring these certifications.

Electrical Performance: The IXTT82N25P offers superior voltage rating (250V vs. 200V) and higher power dissipation capability (500W vs. 360W), providing design margin for applications operating near the IXFT80N20Q's rated limits. The gate charge reduction (142nC vs. 180nC) results in faster switching transitions and reduced gate driver power consumption.

Thermal and Mechanical Compatibility: Identical TO-268AA package geometry ensures direct mechanical substitution without PCB layout modification. Both devices maintain -55°C to 150°C operating temperature range and MSL 1 (Unlimited) moisture sensitivity rating.

On-State Resistance Trade-off: The IXTT82N25P exhibits slightly higher Rds On (35mOhm vs. 28mOhm) when measured at different test conditions (41A vs. 500mA). This difference reflects measurement methodology rather than performance degradation at equivalent operating points and is acceptable for most switching applications.

Frequently Asked Questions (FAQ)

Q: Can the IXTT82N25P directly replace the IXFT80N20Q without circuit modification?

A: Yes. Both devices use identical TO-268AA Surface Mount packages, 10V gate drive voltage, and -55°C to 150°C operating temperature range. No PCB layout or gate driver circuit changes are required. The higher voltage and current ratings of the IXTT82N25P provide design margin without requiring circuit redesign.

Q: What is the significance of the higher Vdss rating (250V vs. 200V) on the IXTT82N25P?

A: The 250V rating on the IXTT82N25P accommodates applications with higher transient voltage spikes or higher nominal operating voltages. For applications designed around the IXFT80N20Q's 200V rating, the IXTT82N25P provides additional voltage margin without performance penalty.

Q: How does the gate charge difference (180nC vs. 142nC) affect circuit performance?

A: Lower gate charge on the IXTT82N25P (142nC) reduces the charge that must be supplied by the gate driver circuit, resulting in faster switching transitions and lower gate driver power dissipation. This is a performance advantage for high-frequency switching applications.

Q: Are there any thermal management differences between these devices?

A: The IXTT82N25P has higher maximum power dissipation (500W vs. 360W), indicating superior thermal performance. Both devices use the same TO-268AA package with identical thermal interface characteristics. Thermal performance depends on PCB layout, heatsinking, and operating conditions rather than package differences.

Q: What is the impact of the Rds On difference (28mOhm vs. 35mOhm)?

A: The Rds On values are measured at different test conditions (500mA vs. 41A). At equivalent operating currents, the performance difference is minimal. The slightly higher Rds On of the IXTT82N25P results in marginally higher conduction losses, which is offset by its superior voltage and power ratings for most applications.

Q: Why is the IXFT80N20Q classified as Obsolete?

A: Obsolete status indicates the manufacturer has discontinued production. The IXTT82N25P, classified as Active, represents the current generation equivalent with improved specifications and assured long-term availability.

Q: Are there compliance or regulatory differences between these parts?

A: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXTT82N25P includes RoHS3 Compliance and REACH Unaffected certifications, providing additional environmental compliance documentation for regulated applications.

Q: Can the IXTT82N25P be used in applications rated for lower voltage operation?

A: Yes. The IXTT82N25P's higher voltage rating does not restrict its use in lower-voltage applications. The device operates safely at any voltage up to its 250V maximum rating. Applications designed for 200V operation function identically with the IXTT82N25P.