IXFT80N15Q Equivalent & Substitute Parts

Part Overview

The IXFT80N15Q is an N-Channel MOSFET manufactured by IXYS, rated for 150V drain-to-source voltage with 80A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ series. The IXFT80N15Q is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	150	V
Current - Continuous Drain (Id) @ 25°C	80	A (Tc)
Rds On (Max) @ Id, Vgs	22.5 mOhm @ 40A, 10V	—
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-268AA	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXFT80N15Q is determined by strict equivalence across the following electrical and mechanical parameters:

Mandatory Equivalence Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 150V
Package Type: TO-268AA surface mount
Mounting Type: Surface Mount

Allowable Parameter Variations: Substitute parts may exceed the original specifications in the following parameters without compromising circuit compatibility:

Continuous Drain Current (Id): Substitute parts rated at higher current ratings are acceptable
Power Dissipation (Max): Substitute parts with higher power ratings are acceptable
Rds On (Max): Substitute parts with lower on-resistance values are acceptable
Operating Temperature Range: Substitute parts with extended upper temperature limits are acceptable
Gate Charge (Qg): Substitute parts with lower gate charge values are acceptable

The IXFT120N15P qualifies as a direct substitute based on matching voltage rating, package type, and mounting configuration, while providing enhanced current handling and thermal performance.

Parameter Comparison

Parameter	IXFT80N15Q	IXFT120N15P	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	150	150	V
Current - Continuous Drain (Id) @ 25°C	80	120	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	22.5 mOhm @ 40A, 10V	16 mOhm @ 500mA, 10V	—
Vgs(th) (Max) @ Id	4V @ 4mA	5V @ 4mA	—
Gate Charge (Qg) (Max) @ Vgs	180	150	nC @ 10V
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4500	4900	pF @ 25V
Power Dissipation (Max)	360	600	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 175	°C (TJ)
Package Type	TO-268AA	TO-268AA	—
Mounting Type	Surface Mount	Surface Mount	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The IXFT120N15P is a qualified substitute for the IXFT80N15Q based on the following engineering criteria:

Voltage Rating Compatibility: Both devices are rated for 150V drain-to-source voltage, ensuring direct compatibility in circuits designed for the original part.

Package and Mounting Equivalence: Both components utilize the TO-268AA surface mount package, permitting direct PCB layout compatibility without redesign.

Current Rating Enhancement: The IXFT120N15P provides 120A continuous drain current compared to the IXFT80N15Q's 80A rating. This enhanced current capability supports existing circuit requirements and provides design margin for future applications.

Thermal Performance Improvement: The IXFT120N15P offers 600W maximum power dissipation versus 360W for the original part, with an extended operating temperature range to 175°C. These improvements enhance thermal stability and reliability.

Product Status: The IXFT120N15P maintains active product status with current manufacturing support, ensuring long-term availability and supply chain continuity.

Regulatory Compliance: Both devices carry REACH Unaffected status and EAR99 classification, maintaining equivalent regulatory standing.

Frequently Asked Questions (FAQ)

Q: Can the IXFT120N15P be used as a direct replacement for the IXFT80N15Q in existing designs?

A: Yes. Both devices share identical 150V voltage ratings, TO-268AA package specifications, and surface mount configuration. The IXFT120N15P's enhanced current and power ratings do not introduce compatibility issues in circuits designed for the IXFT80N15Q.

Q: What are the key differences between these two MOSFETs?

A: The IXFT120N15P provides higher continuous drain current (120A versus 80A), lower on-resistance (16 mOhm versus 22.5 mOhm), reduced gate charge (150 nC versus 180 nC), and extended operating temperature range (-55 to 175°C versus -55 to 150°C). These represent performance enhancements rather than functional changes.

Q: Are there any PCB layout modifications required when substituting the IXFT120N15P for the IXFT80N15Q?

A: No PCB layout modifications are required. Both devices use the identical TO-268AA package footprint, enabling direct component substitution without redesign.

Q: Does the IXFT120N15P require different gate drive circuitry?

A: No. Both devices operate with identical ±20V maximum gate-source voltage and 10V drive voltage specifications. Existing gate drive circuits designed for the IXFT80N15Q are fully compatible with the IXFT120N15P.

Q: What is the significance of the IXFT120N15P's lower gate charge specification?

A: The reduced gate charge (150 nC versus 180 nC) results in faster switching transitions and lower gate drive power consumption, providing improved efficiency in switching applications.

Q: Is the IXFT120N15P available in the same packaging format as the IXFT80N15Q?

A: Yes. Both devices are supplied in TO-268AA surface mount packages. The IXFT120N15P is available in tube packaging, while the IXFT80N15Q was supplied in standard packaging.

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