IXFT80N10Q Equivalent & Substitute Parts

Part Overview

The IXFT80N10Q is an N-Channel MOSFET rated for 100V drain-to-source voltage with 80A continuous drain current at 25°C. This device is manufactured by IXYS and packaged in the TO-268AA surface mount configuration. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	15 mOhm @ 40A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 4mA
Gate Charge (Qg) @ Vgs	180	nC @ 10V
Input Capacitance (Ciss) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-268AA	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFT80N10Q is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the same 100V drain-to-source voltage (Vdss) rating to ensure safe operation within the same circuit topology and voltage stress limits.

Package Compatibility: The substitute part must use the TO-268AA surface mount package to ensure mechanical fit and thermal interface compatibility with existing PCB layouts and heat sink mounting arrangements.

Gate Drive Compatibility: The substitute part must operate with the same 10V drive voltage specification to maintain compatibility with existing gate driver circuits and control logic.

Operating Temperature Range: The substitute part must support the full -55°C to 150°C operating temperature range to ensure functionality across the same environmental conditions.

Gate Threshold Voltage: The substitute part must maintain similar gate threshold voltage characteristics to ensure proper switching behavior with existing control circuits.

The IXTT110N10L2 meets all these substitution criteria while offering enhanced electrical performance characteristics.

Parameter Comparison

Parameter	IXFT80N10Q	IXTT110N10L2	Unit
Manufacturer	IXYS	IXYS	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	80	110	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	15 mOhm @ 40A, 10V	18 mOhm @ 55A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4	4.5	V
Gate Charge (Qg) @ Vgs	180	260	nC @ 10V
Input Capacitance (Ciss) @ Vds	4500	10500	pF @ 25V
Power Dissipation (Max)	360	600	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	-
Package Type	TO-268AA	TO-268AA	-
Vgs (Max)	±20	±20	V
Product Status	Obsolete	Active	-

Engineering Selection Recommendations

The IXFT80N10Q is classified as obsolete, which restricts long-term availability and support. The IXTT110N10L2 is an active product from the same manufacturer (IXYS) and provides a direct substitute with identical voltage and package specifications.

Compliance and Certification: The IXTT110N10L2 is RoHS3 compliant and REACH unaffected, providing superior regulatory compliance compared to the obsolete IXFT80N10Q. Both parts carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Product Availability: The IXTT110N10L2 is currently in active production with 1610 pieces in stock, ensuring supply chain continuity. The IXFT80N10Q, being obsolete, has limited availability despite 637 pieces currently in stock.

Electrical Performance: The IXTT110N10L2 offers higher continuous drain current (110A versus 80A) and greater power dissipation capability (600W versus 360W), providing design margin for existing applications. The substitute part operates within the same voltage and temperature specifications, ensuring functional compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXTT110N10L2 directly replace the IXFT80N10Q in existing designs?

A: Yes. Both parts share identical voltage ratings (100V Vdss), gate drive voltage (10V), operating temperature range (-55°C to 150°C), and TO-268AA package configuration. The IXTT110N10L2 provides higher current and power handling capability, making it suitable for direct substitution.

Q: What are the key differences between these two parts?

A: The IXTT110N10L2 provides higher continuous drain current (110A versus 80A), greater power dissipation (600W versus 360W), and higher gate charge (260 nC versus 180 nC). The IXTT110N10L2 also has higher input capacitance (10500 pF versus 4500 pF) and slightly higher gate threshold voltage (4.5V versus 4V).

Q: Are there any circuit design considerations when substituting these parts?

A: The higher input capacitance and gate charge of the IXTT110N10L2 may require gate driver circuits with slightly higher current capability. The higher continuous current rating and power dissipation capability of the substitute part provide additional design margin and do not impose restrictions on existing applications.

Q: What is the package compatibility between these parts?

A: Both parts use the TO-268AA surface mount package (TO-268-3, D³Pak with 2 leads plus tab). PCB layouts and thermal interface designs are fully compatible between the two parts.

Q: Why is the IXFT80N10Q obsolete?

A: The IXFT80N10Q is part of the HiPerFET™ series, which has been superseded by newer technology platforms such as the Linear L2™ series represented by the IXTT110N10L2. Obsolescence reflects the manufacturer's transition to advanced process technology and improved device performance.

Q: Is the IXTT110N10L2 suitable for new designs?

A: Yes. The IXTT110N10L2 is an active product with RoHS3 compliance and REACH compliance status, making it suitable for new product development and long-term production applications.

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