IXFT6N100F Equivalent & Substitute Parts Reference

Part Overview

The IXFT6N100F is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in TO-268 surface mount configuration and is part of the HiPerRF™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain functional compatibility across voltage, current, thermal, and packaging specifications while meeting RoHS3 compliance requirements.

Substiute Parts

IXFT6N100F

IXYSIn Stock: 1097IXFT6N100F Datasheet

Current PartRFQ

IXTT6N120

IXYSIn Stock: 1377IXTT6N120 Datasheet

DirectRFQ

APT7M120S

Microchip TechnologyIn Stock: 911APT7M120S Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFT6N100F are identified based on the following allowable parameter criteria:

Voltage Rating: Substitute parts must have Vdss equal to or greater than 1000V. Higher voltage ratings provide backward compatibility in applications where the original 1000V specification is required.

Continuous Drain Current: Substitute parts must have Id ≥ 6A at 25°C to maintain current-handling capability. Parts with higher current ratings provide design margin.

On-State Resistance (Rds On): Substitute parts must have Rds On values compatible with thermal and efficiency requirements. Lower Rds On values reduce power dissipation.

Power Dissipation: Substitute parts must support thermal management equivalent to or exceeding 180W at Tc.

Package Compatibility: Substitute parts must use TO-268 or equivalent D³Pak/D2Pak surface mount packages to ensure PCB layout compatibility.

Operating Temperature: Substitute parts must maintain -55°C to 150°C operating range.

Compliance: All substitute parts must be RoHS3 compliant and carry active or equivalent product status.

Parameter Comparison

Engineering Selection Recommendations

IXTT6N120 (IXYS): This part is a direct IXYS family substitute with identical 6A continuous drain current and same manufacturer lineage. The 1200V Vdss rating exceeds the original 1000V specification, providing voltage margin. The 300W power dissipation rating is 67% higher than the IXFT6N100F, enabling improved thermal performance. Package compatibility is maintained with TO-268AA configuration. Product status is active with full RoHS3 compliance and unlimited moisture sensitivity level. This substitute is suitable for applications requiring minimal design modification and manufacturer continuity within the IXYS product line.

APT7M120S (Microchip Technology): This part offers higher current capability at 8A continuous drain current, exceeding the original 6A specification by 33%. The 1200V Vdss rating provides voltage compatibility. Power dissipation capability reaches 335W, supporting enhanced thermal management. The D3Pak package is mechanically and electrically compatible with TO-268 configurations for surface mount applications. Product status is active with full RoHS3 compliance. The higher gate charge (80 nC) and input capacitance (2565 pF) require verification of gate drive circuit compatibility. This substitute is appropriate for applications where increased current margin and thermal headroom are beneficial.

Both substitutes maintain compliance certifications and active product status, ensuring long-term availability and supply chain stability compared to the obsolete IXFT6N100F.

Frequently Asked Questions (FAQ)

Q: Can IXTT6N120 be used as a direct replacement for IXFT6N100F without PCB modifications?

A: IXTT6N120 uses TO-268AA packaging, which is mechanically and electrically compatible with the original TO-268-3 footprint. Pin configuration and lead spacing are identical. No PCB layout modifications are required for this substitution.

Q: What are the implications of the higher Vdss rating (1200V) in substitute parts?

A: Higher Vdss ratings provide voltage margin and do not negatively impact applications designed for 1000V operation. The device will operate safely at voltages up to its rated Vdss. No circuit modifications are necessary.

Q: How does the increased Rds On value in IXTT6N120 (2.6 Ohm vs. 1.9 Ohm) affect thermal performance?

A: Higher Rds On increases conduction losses. At 6A continuous current, the IXTT6N120 dissipates approximately 93.6W (6² × 2.6) compared to 68.4W (6² × 1.9) for the IXFT6N100F. The IXTT6N120's 300W power dissipation rating provides sufficient thermal margin for this increase.

Q: Is APT7M120S compatible with existing gate drive circuits designed for IXFT6N100F?

A: APT7M120S has higher gate charge (80 nC vs. 54 nC) and input capacitance (2565 pF vs. 1770 pF). Gate drive circuits must be verified to supply adequate current and voltage for the higher capacitive load. Switching speed and efficiency may differ from the original design.

Q: What is the difference between TO-268 and D3Pak packaging?

A: TO-268 and D3Pak (TO-263) are both three-lead surface mount packages with identical pin configurations and lead spacing. They are mechanically and electrically interchangeable. Both use a tab for thermal connection to the drain.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both IXTT6N120 and APT7M120S carry RoHS3 compliance certification, matching the original IXFT6N100F specification.

Q: What is the significance of "Product Status: Active" for substitute parts?

A: Active product status indicates the manufacturer maintains production, technical support, and long-term availability. This ensures supply chain continuity and access to datasheets and application support, unlike the obsolete IXFT6N100F.