IXFT60N25Q Equivalent & Substitute Parts

Part Overview

The IXFT60N25Q is an N-Channel MOSFET rated for 250V drain-to-source voltage with 60A continuous drain current at 25°C. This device is manufactured by IXYS and packaged in the TO-268AA surface mount configuration. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substitute parts must maintain electrical compatibility across voltage ratings, current handling capability, and thermal characteristics while conforming to the same physical package specification.

Substiute Parts

IXFT60N25Q

IXYSIn Stock: 1070IXFT60N25Q Datasheet

Current PartRFQ

IXTT82N25P

IXYSIn Stock: 971IXTT82N25P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT60N25Q is based on the following electrical and mechanical criteria:

Mandatory Matching Parameters:

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 250V
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)

Allowable Variation Parameters:

• Current - Continuous Drain (Id): Equal to or greater than 60A
• Power Dissipation (Max): Equal to or greater than 360W
• Rds On (Max): Equal to or less than 47mOhm (lower on-resistance is acceptable)

The IXTT82N25P meets all mandatory matching criteria and exceeds the allowable variation thresholds, making it a direct electrical and mechanical substitute for the IXFT60N25Q.

Parameter Comparison

Engineering Selection Recommendations

The IXTT82N25P is a direct substitute for the IXFT60N25Q based on electrical and mechanical compatibility. The substitute part offers the following advantages:

Product Status: The IXTT82N25P is classified as Active, ensuring continued availability and manufacturing support, whereas the IXFT60N25Q is obsolete.

Electrical Performance: The IXTT82N25P provides higher continuous drain current (82A versus 60A) and greater power dissipation capability (500W versus 360W), enabling operation in applications with increased thermal or current demands.

On-Resistance: The IXTT82N25P exhibits lower on-resistance (35mOhm versus 47mOhm), resulting in reduced conduction losses and improved efficiency.

Compliance: The IXTT82N25P is ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic components.

Package Compatibility: Both devices utilize identical TO-268AA surface mount packaging, ensuring mechanical and thermal interface compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the IXTT82N25P directly replace the IXFT60N25Q without PCB modifications?

A: Yes. Both devices share identical TO-268-3, D³Pak (2 Leads + Tab), TO-268AA packaging and surface mount configuration. No PCB layout changes are required.

Q: What are the key electrical differences between these parts?

A: The IXTT82N25P provides higher continuous drain current (82A versus 60A), lower on-resistance (35mOhm versus 47mOhm), and greater power dissipation capability (500W versus 360W). Both maintain the same 250V drain-to-source voltage rating and ±20V gate voltage specification.

Q: Is the IXTT82N25P suitable for applications originally designed for the IXFT60N25Q?

A: Yes. The IXTT82N25P meets or exceeds all electrical specifications required by the IXFT60N25Q. The higher current and power ratings provide additional design margin.

Q: What is the significance of the IXFT60N25Q being obsolete?

A: Obsolete status indicates the part is no longer manufactured or supported by IXYS. The IXTT82N25P, classified as Active, ensures long-term availability and continued manufacturing support.

Q: Are there any thermal considerations when substituting these parts?

A: Both devices operate across the same temperature range (-55°C to 150°C TJ). The IXTT82N25P's higher power dissipation rating (500W) provides greater thermal headroom in high-power applications.

Q: Do both parts require identical gate drive voltage?

A: Yes. Both the IXFT60N25Q and IXTT82N25P specify 10V drive voltage for maximum on-resistance performance and maintain ±20V maximum gate voltage ratings.

Q: What compliance certifications apply to the IXTT82N25P?

A: The IXTT82N25P is ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards for electronic component manufacturing and distribution.