IXFT58N20Q Equivalent & Substitute Parts

Part Overview

The IXFT58N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 58A continuous drain current in a Surface Mount TO-268AA package. This device is classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement. The part operates across a temperature range of -55°C to 150°C and dissipates up to 300W at the case temperature.

Substiute Parts

IXFT58N20Q

IXYSIn Stock: 1489IXFT58N20Q Datasheet

Current PartRFQ

IXTT82N25P

IXYSIn Stock: 971IXTT82N25P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT58N20Q is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 200V
• Continuous Drain Current (Id) must equal or exceed 58A
• On-State Resistance (Rds On) must not exceed the original specification to maintain thermal performance
• Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuitry
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

• Package type must be TO-268AA (Surface Mount, D³Pak configuration)
• Mounting type must be Surface Mount
• Moisture Sensitivity Level must be acceptable for the application environment

The IXTT82N25P meets these criteria with enhanced electrical ratings while maintaining package and thermal compatibility.

Parameter Comparison

Engineering Selection Recommendations

The IXTT82N25P is a direct substitute for the IXFT58N20Q based on the following engineering criteria:

Product Status Alignment: The IXTT82N25P is classified as Active, providing long-term availability and supply chain continuity compared to the Obsolete status of the IXFT58N20Q. This addresses the primary driver for substitution.

Electrical Performance: The IXTT82N25P exceeds the electrical requirements of the IXFT58N20Q across all critical parameters. The 250V Vdss rating provides 50V additional margin over the 200V requirement. The 82A continuous drain current exceeds the 58A specification by 41%, enabling operation at higher current levels or with improved thermal margin. The on-state resistance of 35mOhm at 41A is superior to the 40mOhm specification, resulting in lower conduction losses and reduced thermal dissipation.

Thermal Performance: The IXTT82N25P supports 500W maximum power dissipation compared to 300W for the IXFT58N20Q, providing enhanced thermal headroom for the same or higher current applications.

Package and Compliance: Both devices utilize identical TO-268AA Surface Mount packaging with D³Pak configuration, ensuring mechanical and thermal interface compatibility. Both devices maintain MSL 1 (Unlimited) moisture sensitivity classification. The IXTT82N25P includes RoHS3 compliance and REACH Unaffected status, meeting modern regulatory requirements.

Gate Drive Compatibility: The gate threshold voltage of the IXTT82N25P (5V @ 250µA) is compatible with standard 10V gate drive circuits used for the IXFT58N20Q. Gate charge remains nearly identical at 142nC versus 140nC, ensuring equivalent switching performance and gate drive circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXTT82N25P directly replace the IXFT58N20Q in existing PCB layouts?

A: Yes. Both devices use identical TO-268AA Surface Mount packaging with D³Pak configuration (2 Leads + Tab). Pin assignments and thermal interface dimensions are compatible, allowing direct PCB substitution without layout modifications.

Q: What are the key electrical differences between these devices?

A: The IXTT82N25P provides higher voltage rating (250V vs. 200V), higher current capacity (82A vs. 58A), lower on-state resistance (35mOhm vs. 40mOhm), and higher power dissipation capability (500W vs. 300W). These represent performance enhancements rather than deviations from the original specification.

Q: Are gate drive circuits compatible between the two devices?

A: Yes. Both devices operate with 10V gate drive voltage and exhibit nearly identical gate charge specifications (142nC vs. 140nC @ 10V). Existing gate drive circuits designed for the IXFT58N20Q require no modification for the IXTT82N25P.

Q: Does the IXTT82N25P require different thermal management?

A: The IXTT82N25P supports higher power dissipation (500W vs. 300W) and exhibits lower on-state resistance, resulting in reduced conduction losses. Existing thermal management solutions designed for the IXFT58N20Q are adequate for the IXTT82N25P and may provide improved thermal margin.

Q: What is the moisture sensitivity classification for both devices?

A: Both the IXFT58N20Q and IXTT82N25P are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage, handling, or reflow processes.

Q: Is the IXTT82N25P available in the same packaging options?

A: The IXTT82N25P is supplied in Tube packaging, while the IXFT58N20Q inventory information does not specify packaging format. Both devices use identical TO-268AA component packaging. Confirm packaging requirements with your procurement specification.

Q: What regulatory compliance does the IXTT82N25P provide?

A: The IXTT82N25P is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements for electronic components in most jurisdictions. Both devices carry EAR99 export classification and identical HTSUS codes (8541.29.0095).