IXFT52N50P2 Equivalent & Substitute Parts

Part Overview

The IXFT52N50P2 is an N-Channel 500V 52A MOSFET manufactured by IXYS in the HiPerFET™ and PolarP2™ series. This device is housed in a TO-268AA surface mount package and is rated for 960W maximum power dissipation at case temperature. The part is designated as Last Time Buy, indicating end-of-life status. Equivalent and substitute parts are necessary to ensure design continuity and maintain supply chain availability for applications requiring N-Channel 500V MOSFET functionality.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	52	A (Tc)
Rds On (Max) @ Id, Vgs	120	mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs	113	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6800	pF @ 25V
Power Dissipation (Max)	960	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-268AA	Surface Mount
Vgs (Max)	±30	V
Vgs(th) (Max) @ Id	4.5	V @ 4mA

Substitute Part Grouping Explanation

Substitution of the IXFT52N50P2 is determined by the following critical parameters:

Voltage Rating Requirement: All substitute parts must maintain the 500V Drain to Source Voltage (Vdss) rating to ensure safe operation in the target application circuit.

Package Compatibility: All substitute parts must use the TO-268AA surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management systems.

Current and Thermal Performance: Substitute parts must meet or exceed the 52A continuous drain current specification and maintain thermal performance characteristics suitable for the application's power dissipation requirements.

Gate Charge and Input Capacitance: These parameters affect switching speed and drive circuit requirements. Substitute parts with comparable gate charge and input capacitance values ensure compatible gate driver performance.

Temperature Range: All substitute parts must support the -55°C to 150°C operating temperature range to maintain functionality across the full application environment.

Compliance and Regulatory Status: All substitute parts must maintain RoHS3 compliance, MSL Level 1 rating, and REACH unaffected status to satisfy regulatory and supply chain requirements.

Parameter Comparison

Parameter	IXFT52N50P2	IXFT60N50P3	APT42F50S	Unit
Manufacturer	IXYS	IXYS	Microchip Technology	—
Drain to Source Voltage (Vdss)	500	500	500	V
Continuous Drain Current (Id) @ 25°C	52	60	42	A (Tc)
Rds On (Max) @ Id, Vgs	120 @ 26A, 10V	100 @ 30A, 10V	130 @ 21A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	113 @ 10V	96 @ 10V	170 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	6800 @ 25V	6250 @ 25V	6810 @ 25V	pF
Power Dissipation (Max)	960	1040	625	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-268AA	TO-268AA	D3Pak	—
Vgs (Max)	±30	±30	±30	V
Vgs(th) (Max) @ Id	4.5 @ 4mA	5 @ 4mA	5 @ 1mA	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFT60N50P3 (IXYS Manufacturer Recommended Substitute)

The IXFT60N50P3 is the manufacturer-recommended equivalent for the IXFT52N50P2. This part maintains identical voltage rating (500V), package type (TO-268AA), and operating temperature range (-55°C to 150°C). The IXFT60N50P3 provides enhanced performance with 60A continuous drain current, lower on-resistance (100 mOhm vs. 120 mOhm), and higher power dissipation capability (1040W vs. 960W). The part is in Active product status, ensuring long-term availability and supply chain stability. Gate charge is reduced to 96 nC, improving switching efficiency. This part is suitable for direct replacement in applications where the increased current rating and improved thermal performance provide design margin.

APT42F50S (Microchip Technology Alternative)

The APT42F50S is a similar alternative from Microchip Technology that maintains the 500V voltage rating and -55°C to 150°C operating temperature range. This part is housed in a D3Pak package, which is mechanically and thermally equivalent to TO-268AA. The APT42F50S provides 42A continuous drain current, which is lower than the IXFT52N50P2 specification. On-resistance is 130 mOhm at 21A, and power dissipation is rated at 625W. Gate charge is higher at 170 nC, requiring consideration of gate driver capability. This part is in Active product status. The APT42F50S is suitable for applications where current requirements are 42A or lower and where cross-manufacturer qualification is acceptable.

Product Status Consideration

The IXFT52N50P2 is designated Last Time Buy. The IXFT60N50P3 is in Active status, providing assured long-term availability. The APT42F50S is also in Active status. Selection should prioritize the IXFT60N50P3 for new designs and long-term production requirements.

Frequently Asked Questions (FAQ)

Q: Can the IXFT60N50P3 be used as a direct replacement for the IXFT52N50P2?

A: Yes. The IXFT60N50P3 maintains identical voltage rating (500V), package type (TO-268AA), and operating temperature range. The higher current rating (60A vs. 52A) and improved on-resistance provide enhanced performance. No circuit modifications are required for direct substitution.

Q: What is the difference between TO-268AA and D3Pak packaging?

A: TO-268AA and D3Pak are mechanically and thermally equivalent surface mount packages for power MOSFETs. Both provide identical lead configuration (2 Leads + Tab) and thermal performance. PCB layouts designed for one package type accommodate the other without modification.

Q: Is the APT42F50S suitable for applications requiring 52A continuous current?

A: No. The APT42F50S is rated for 42A continuous drain current, which is below the IXFT52N50P2 specification of 52A. This part is suitable only for applications with current requirements of 42A or lower.

Q: How does gate charge affect gate driver selection?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET on and off. The IXFT52N50P2 requires 113 nC, the IXFT60N50P3 requires 96 nC, and the APT42F50S requires 170 nC. Gate drivers must supply sufficient charge capacity. Lower gate charge values reduce switching losses and allow faster switching speeds.

Q: Are all three parts RoHS3 compliant?

A: Yes. The IXFT52N50P2, IXFT60N50P3, and APT42F50S are all RoHS3 compliant with MSL Level 1 rating and REACH unaffected status, satisfying regulatory requirements for commercial and industrial applications.

Q: What is the significance of the IXFT52N50P2 being Last Time Buy?

A: Last Time Buy status indicates the part is at end-of-life and will no longer be manufactured after a specified date. Existing inventory is available, but future supply is not guaranteed. The IXFT60N50P3 is recommended for new designs to ensure long-term availability.

Q: How do on-resistance values compare across the three parts?

A: The IXFT60N50P3 has the lowest on-resistance at 100 mOhm, followed by the IXFT52N50P2 at 120 mOhm, and the APT42F50S at 130 mOhm. Lower on-resistance reduces conduction losses and heat generation during operation.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge and input capacitance affect switching performance. The IXFT60N50P3 has lower gate charge (96 nC) and lower input capacitance (6250 pF), making it more suitable for high-frequency applications. The APT42F50S has higher gate charge (170 nC), which may limit switching frequency depending on gate driver capability.

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