IXFT50N60X N-Channel MOSFET 600V 50A Equivalent & Substitute Parts

Part Overview

The IXFT50N60X is an N-Channel MOSFET rated for 600V drain-to-source voltage with 50A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ Ultra X series and is housed in a TO-268 surface mount package. The part carries a Last Time Buy product status, indicating that the original manufacturer has discontinued or will discontinue production. Identification of equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Substiute Parts

IXFT50N60X
IXYSIn Stock: 739IXFT50N60X Datasheet
IXFT50N60X
Current Part
IXFT60N65X2HV
IXYSIn Stock: 780IXFT60N65X2HV Datasheet
IXFT60N65X2HV
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 50 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 73 mOhm @ 25A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 V @ 4mA
Gate Charge (Qg Max) @ Vgs 116 nC @ 10V
Power Dissipation (Max) 660 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-268 Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXFT50N60X is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a drain-to-source voltage rating equal to or greater than 600V to ensure safe operation in the original application circuit.

Current Rating Compatibility: The substitute part must support a continuous drain current rating equal to or greater than 50A at 25°C to handle the design load without thermal stress.

On-State Resistance (Rds On): The substitute part must not exceed the maximum on-state resistance of the original part to prevent increased power dissipation and thermal runaway in the application.

Package and Mounting: The substitute part must use the same or mechanically compatible surface mount package (TO-268 or equivalent) to ensure PCB layout compatibility without redesign.

Regulatory Compliance: The substitute part must maintain RoHS3 compliance and REACH unaffected status to satisfy environmental and regulatory requirements.

Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C (TJ) to ensure reliable operation across all specified conditions.

The IXFT60N65X2HV meets these substitution criteria with enhanced electrical performance characteristics while maintaining package compatibility and regulatory compliance.

Parameter Comparison

Parameter IXFT50N60X (Original) IXFT60N65X2HV (Substitute) Unit
Drain to Source Voltage (Vdss) 600 650 V
Continuous Drain Current (Id) @ 25°C 50 60 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 73 @ 25A, 10V 52 @ 30A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 4.5 @ 4mA 5.0 @ 4mA V
Gate Charge (Qg Max) @ Vgs 116 @ 10V 108 @ 10V nC
Power Dissipation (Max) 660 780 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-268 TO-268HV Surface Mount
Series HiPerFET™ Ultra X HiPerFET™ Ultra X2
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The IXFT60N65X2HV is a direct substitute for the IXFT50N60X based on the following engineering criteria:

Electrical Performance Enhancement: The substitute part provides superior electrical characteristics with a lower on-state resistance (52 mOhm versus 73 mOhm), resulting in reduced conduction losses and improved thermal efficiency. The higher voltage rating (650V versus 600V) and increased current capacity (60A versus 50A) provide additional design margin without compromising compatibility.

Regulatory and Compliance Alignment: Both parts maintain ROHS3 compliance and REACH unaffected status, ensuring continued adherence to environmental and regulatory standards. The substitute part is classified as Active product status, providing long-term availability and supply chain stability compared to the Last Time Buy status of the original part.

Package Compatibility: The TO-268HV package is mechanically compatible with the original TO-268 package, allowing direct substitution on existing PCB layouts without redesign or rework.

Thermal Performance: The increased power dissipation rating (780W versus 660W) of the substitute part accommodates higher operational stress and provides thermal headroom for demanding applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFT60N65X2HV be used as a direct replacement for the IXFT50N60X without circuit modifications?

A: Yes. The IXFT60N65X2HV meets or exceeds all critical electrical parameters of the IXFT50N60X. The higher voltage rating, increased current capacity, and improved on-state resistance provide enhanced performance. The TO-268HV package is mechanically compatible with the original TO-268 package, enabling direct PCB substitution.

Q: What is the difference between the TO-268 and TO-268HV packages?

A: Both packages are surface mount variants of the D³Pak (2 Leads + Tab) configuration. The TO-268HV designation indicates a high-voltage variant optimized for applications requiring enhanced voltage performance. The mechanical footprint remains compatible for direct substitution.

Q: Does the substitute part have the same gate charge characteristics?

A: The IXFT60N65X2HV has a slightly lower gate charge (108 nC versus 116 nC at 10V), which may result in faster switching times and reduced gate drive power requirements compared to the original part.

Q: Are there any moisture sensitivity differences between the original and substitute parts?

A: Yes. The IXFT50N60X has MSL 1 (Unlimited), while the IXFT60N65X2HV has MSL 3 (168 Hours). This indicates the substitute part requires controlled storage conditions with a 168-hour floor life after moisture exposure. Proper handling and storage protocols must be observed.

Q: What is the advantage of the lower on-state resistance in the substitute part?

A: The reduced on-state resistance (52 mOhm versus 73 mOhm) decreases conduction losses, resulting in lower heat generation, improved efficiency, and reduced thermal stress on the component and surrounding circuitry.

Q: Is the substitute part suitable for high-frequency switching applications?

A: The IXFT60N65X2HV exhibits lower gate charge and comparable switching characteristics to the original part, making it suitable for high-frequency applications. The improved on-state resistance also reduces switching losses.

Q: What is the product status difference, and why does it matter?

A: The IXFT50N60X carries Last Time Buy status, indicating discontinued or ending production. The IXFT60N65X2HV is Active status, ensuring continued availability, technical support, and long-term supply chain reliability for new designs and production continuity.

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