IXFT50N20 Equivalent & Substitute Parts

Part Overview

The IXFT50N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 50A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is packaged in a TO-268AA surface mount configuration. The part carries a Last Time Buy product status, indicating that the original manufacturer has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements for applications utilizing this component.

Substiute Parts

IXFT50N20

IXYSIn Stock: 957IXFT50N20 Datasheet

Current PartRFQ

IXTT74N20P

IXYSIn Stock: 892IXTT74N20P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT50N20 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 200V
• Package Type: Must be TO-268AA surface mount configuration
• FET Type: Must be N-Channel MOSFET
• Technology: Must be Metal Oxide MOSFET

Performance Parameters for Substitution Compatibility:

• Continuous Drain Current (Id): Substitute must meet or exceed 50A at 25°C
• On-State Resistance (Rds On): Substitute performance must be compatible with circuit requirements
• Power Dissipation: Substitute must support thermal requirements of the application
• Operating Temperature Range: Substitute must cover the required operating window

The IXTT74N20P qualifies as a substitute based on matching Vdss (200V), identical package type (TO-268AA), matching FET type (N-Channel), and identical technology (Metal Oxide MOSFET). The substitute provides enhanced performance characteristics including higher continuous drain current (74A versus 50A) and improved thermal capability (480W versus 300W).

Parameter Comparison

Engineering Selection Recommendations

IXFT50N20 Status Consideration: The IXFT50N20 carries a Last Time Buy product status, indicating that IXYS has announced the end of production for this component. This status necessitates the identification of suitable alternatives to maintain design continuity and ensure long-term supply availability.

IXTT74N20P as Primary Substitute: The IXTT74N20P is classified as an Active product, confirming ongoing manufacturing and availability. Both devices are ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. The IXTT74N20P maintains identical voltage ratings (200V Vdss) and package configuration (TO-268AA), ensuring mechanical and electrical compatibility in existing PCB layouts.

Performance Enhancement: The IXTT74N20P provides superior electrical performance characteristics compared to the IXFT50N20. The substitute offers 48% higher continuous drain current (74A versus 50A), 60% higher power dissipation capability (480W versus 300W), lower on-state resistance (34mOhm versus 45mOhm), and reduced gate charge (107nC versus 220nC). These improvements result in lower conduction losses and reduced switching losses in power conversion applications.

Temperature Range Extension: The IXTT74N20P extends the maximum operating temperature from 150°C to 175°C, providing additional thermal margin in high-temperature environments.

Compliance and Certification: Both devices maintain identical compliance certifications (ROHS3, REACH Unaffected, MSL 1), ensuring no additional qualification or documentation requirements for design substitution.

Frequently Asked Questions (FAQ)

Q: Can the IXTT74N20P directly replace the IXFT50N20 in existing designs?

A: Yes. Both devices share identical drain-to-source voltage ratings (200V), identical package configuration (TO-268AA), and identical pin assignments. The IXTT74N20P is a direct mechanical and electrical substitute. No PCB layout modifications are required.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (50A versus 74A), power dissipation capability (300W versus 480W), on-state resistance (45mOhm versus 34mOhm), gate charge (220nC versus 107nC), and maximum operating temperature (150°C versus 175°C). The IXTT74N20P provides enhanced performance across all parameters.

Q: Are there any thermal management considerations when substituting?

A: The IXTT74N20P has superior thermal characteristics with 60% higher power dissipation capability and a 25°C higher maximum junction temperature. Existing thermal management solutions designed for the IXFT50N20 will provide equal or improved performance with the substitute device.

Q: Do both devices require identical gate drive circuitry?

A: Both devices operate with ±20V maximum gate voltage and 10V drive voltage specifications. Gate drive circuitry designed for the IXFT50N20 is compatible with the IXTT74N20P. The IXTT74N20P requires lower gate charge (107nC versus 220nC), which may reduce switching losses in the gate drive circuit.

Q: What is the significance of the Last Time Buy status on the IXFT50N20?

A: Last Time Buy status indicates that IXYS has announced the end of production for the IXFT50N20. This status requires design teams to identify and qualify alternative components to ensure continued supply availability. The IXTT74N20P, with Active product status, provides a viable long-term alternative.

Q: Are compliance certifications identical between the two devices?

A: Yes. Both the IXFT50N20 and IXTT74N20P are ROHS3 Compliant, REACH Unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. No additional compliance documentation or qualification is required for substitution.

Q: Can the IXTT74N20P be used in applications requiring the exact 50A current specification?

A: Yes. The IXTT74N20P is rated for 74A continuous drain current, which exceeds the 50A requirement of the original IXFT50N20. The substitute device will operate within specification in any application designed for the original component.

Q: What is the impact of lower gate charge on circuit performance?

A: The IXTT74N20P has 51% lower gate charge (107nC versus 220nC). This reduction decreases the energy required for gate switching, resulting in lower switching losses and potentially improved efficiency in power conversion circuits. Gate drive circuitry designed for the higher gate charge of the IXFT50N20 will operate reliably with the lower gate charge of the substitute.