IXFT32N50 Equivalent & Substitute Parts

Part Overview

The IXFT32N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 32A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is housed in a TO-268AA surface mount package and is designed for high-voltage switching applications requiring 360W maximum power dissipation.

The IXFT32N50 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IXFT32N50

IXYSIn Stock: 1590IXFT32N50 Datasheet

Current PartRFQ

IXFT36N50P

IXYSIn Stock: 1075IXFT36N50P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT32N50 is determined by electrical and mechanical parameter compatibility within the IXYS HiPerFET™ MOSFET family. The following criteria establish valid substitution:

Critical Parameters for Substitution:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• Package Type: Must be TO-268AA surface mount
• FET Type: Must be N-Channel MOSFET
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Mounting Type: Must be surface mount

Allowable Parameter Variations:

• Continuous Drain Current (Id): May exceed 32A
• Power Dissipation (Max): May exceed 360W
• Rds On (Max): May be lower (improved performance)
• Gate Charge (Qg): May be lower (improved switching characteristics)
• Input Capacitance (Ciss): May vary within acceptable limits

The IXFT36N50P meets all critical substitution criteria and is classified as a direct substitute for the IXFT32N50.

Parameter Comparison

Engineering Selection Recommendations

IXFT36N50P as Primary Substitute:

The IXFT36N50P is the direct substitute for the IXFT32N50. Both devices share identical voltage ratings (500V Vdss), identical operating temperature range (-55°C to 150°C TJ), and identical package configuration (TO-268AA surface mount). The IXFT36N50P carries Active product status, ensuring ongoing availability and supply chain support.

The IXFT36N50P provides enhanced electrical performance characteristics compared to the IXFT32N50:

• Higher continuous drain current rating (36A versus 32A)
• Increased power dissipation capability (540W versus 360W)
• Reduced gate charge (93 nC versus 300 nC), resulting in improved switching speed
• Extended maximum gate voltage rating (±30V versus ±20V)
• RoHS3 compliance and REACH unaffected status

The IXFT36N50P is suitable for direct replacement in applications where the IXFT32N50 was originally specified. The higher current and power ratings provide design margin without requiring circuit modifications. The reduced gate charge enables faster switching transitions, potentially improving system efficiency.

Frequently Asked Questions (FAQ)

Q: Can the IXFT36N50P directly replace the IXFT32N50 in existing designs?

A: Yes. Both devices share identical voltage ratings (500V), identical package configuration (TO-268AA), and identical operating temperature range (-55°C to 150°C TJ). The IXFT36N50P provides higher current and power ratings, making it suitable for direct substitution without circuit redesign.

Q: What are the key differences between the IXFT32N50 and IXFT36N50P?

A: The IXFT36N50P provides higher continuous drain current (36A versus 32A), increased power dissipation (540W versus 360W), significantly reduced gate charge (93 nC versus 300 nC), and extended maximum gate voltage (±30V versus ±20V). The IXFT36N50P carries Active product status, while the IXFT32N50 is Obsolete.

Q: Are the pin configurations identical between these devices?

A: Yes. Both devices use the TO-268AA package configuration with identical pin assignments. No PCB layout modifications are required for substitution.

Q: Does the IXFT36N50P require different gate drive circuitry?

A: The IXFT36N50P operates with the same 10V drive voltage specification as the IXFT32N50. Existing gate drive circuits designed for the IXFT32N50 are compatible with the IXFT36N50P. The reduced gate charge of the IXFT36N50P may allow for faster switching with the same drive circuit.

Q: What is the significance of the reduced gate charge in the IXFT36N50P?

A: Gate charge (Qg) directly affects switching speed and gate drive power requirements. The IXFT36N50P gate charge of 93 nC (versus 300 nC for the IXFT32N50) enables faster switching transitions, reducing switching losses and potentially improving overall system efficiency.

Q: Are there compliance or regulatory differences between these parts?

A: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXFT36N50P includes RoHS3 compliance and REACH unaffected status certifications. Both devices have MSL rating of 1 (Unlimited).

Q: What is the inventory status for these parts?

A: The IXFT32N50 is Obsolete with 1500 pieces in stock. The IXFT36N50P is Active with 1037 pieces in stock, ensuring continued availability for new designs and production requirements.