IXFT30N60P N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT30N60P is an N-Channel 600V 30A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-268AA surface mount package. This device is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity. The part delivers 500W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Substiute Parts

IXFT30N60P

IXYSIn Stock: 1016IXFT30N60P Datasheet

Current PartRFQ

IXFT36N60P

IXYSIn Stock: 1151IXFT36N60P Datasheet

MFR RecommendedRFQ

APT28F60S

Microsemi CorporationIn Stock: 743APT28F60S Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFT30N60P are identified based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The substitution logic is governed by the following criteria:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 600V
• Continuous Drain Current (Id): Must meet or exceed 30A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible at specified gate drive conditions
• Package Type: Must be surface mount TO-268 or equivalent D³Pak configuration
• Operating Temperature Range: Must span -55°C to 150°C minimum
• RoHS and REACH Compliance: Must maintain ROHS3 Compliant and REACH Unaffected status

Substitute Classification:

MFR Recommended Substitute: IXFT36N60P represents the manufacturer-recommended upgrade path, offering enhanced current handling (36A vs. 30A) and improved thermal performance (650W vs. 500W) while maintaining identical voltage rating and package footprint.

Similar Substitute: APT28F60S from Microsemi Corporation provides electrical equivalence at the 30A current level with compatible voltage and thermal specifications, though from an alternative manufacturer within the POWER MOS 8™ series.

Parameter Comparison

Engineering Selection Recommendations

IXFT36N60P (MFR Recommended Substitute): This part is the primary substitute option. It maintains IXYS HiPerFET™ series continuity and is classified as Active, ensuring long-term availability and supply chain stability. The IXFT36N60P exceeds the electrical specifications of the IXFT30N60P with higher continuous drain current (36A vs. 30A) and superior power dissipation capability (650W vs. 500W). Both parts share identical voltage ratings (600V), gate threshold characteristics (5V @ 4mA), and operating temperature range (-55°C to 150°C). The TO-268AA package footprint is identical, enabling direct PCB compatibility. ROHS3 compliance and REACH Unaffected status are maintained. The increased gate charge (102 nC vs. 82 nC) and input capacitance (5800 pF vs. 4000 pF) require verification of gate driver capability in the target application.

APT28F60S (Similar Substitute): This part provides electrical equivalence at the original 30A current specification from an alternative manufacturer (Microsemi Corporation). The APT28F60S is classified as Active and maintains all critical electrical parameters: 600V Vdss, 30A continuous drain current, 5V gate threshold, and -55°C to 150°C operating range. The D³Pak package is mechanically and electrically compatible with the TO-268AA footprint. ROHS3 compliance and REACH Unaffected status are confirmed. The gate charge specification (140 nC vs. 82 nC) is notably higher, requiring gate driver assessment. The on-state resistance (220 mOhm @ 14A, 10V) is slightly elevated compared to the main part (240 mOhm @ 15A, 10V), resulting in marginally improved thermal performance.

Selection Basis: Both substitutes satisfy the mandatory electrical and mechanical compatibility requirements. The IXFT36N60P is recommended for applications requiring performance margin and extended thermal headroom. The APT28F60S is suitable for direct current-level replacement with alternative manufacturer sourcing. Both parts maintain regulatory compliance and environmental certifications equivalent to the obsolete IXFT30N60P.

Frequently Asked Questions (FAQ)

Q: Can the IXFT36N60P be used as a direct replacement for the IXFT30N60P?

A: Yes. The IXFT36N60P is electrically and mechanically compatible with the IXFT30N60P. Both devices share identical 600V Vdss rating, TO-268AA package footprint, gate threshold voltage (5V @ 4mA), and operating temperature range (-55°C to 150°C). The IXFT36N60P provides higher current capability (36A vs. 30A) and power dissipation (650W vs. 500W). Gate driver circuits must accommodate the increased gate charge (102 nC vs. 82 nC) and input capacitance (5800 pF vs. 4000 pF).

Q: What are the key differences between the IXFT36N60P and APT28F60S?

A: Both parts meet the 600V, 30A+ electrical specification and share the TO-268 package family. The IXFT36N60P is from IXYS (same manufacturer as the main part) and offers 36A continuous current with 650W power dissipation. The APT28F60S from Microsemi provides 30A continuous current with 520W power dissipation. Gate charge differs significantly: IXFT36N60P at 102 nC versus APT28F60S at 140 nC. Both maintain ROHS3 compliance and REACH Unaffected status.

Q: Are there package compatibility concerns when substituting these parts?

A: No. All three parts (IXFT30N60P, IXFT36N60P, and APT28F60S) use the TO-268-3 D³Pak configuration with identical pin assignments and thermal tab placement. PCB footprints are directly compatible without layout modifications.

Q: What compliance certifications do the substitute parts maintain?

A: Both IXFT36N60P and APT28F60S are ROHS3 Compliant and REACH Unaffected, matching the regulatory status of the obsolete IXFT30N60P. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all three parts, indicating no moisture-related handling restrictions.

Q: How do gate charge differences affect circuit design?

A: The IXFT30N60P specifies 82 nC gate charge at 10V. The IXFT36N60P increases this to 102 nC, and the APT28F60S to 140 nC. Higher gate charge requires greater gate driver current or longer switching times. Gate driver circuits must be verified to supply sufficient current at the specified gate voltage to achieve desired switching frequency and efficiency targets.

Q: What is the impact of increased input capacitance on switching performance?

A: The IXFT30N60P has 4000 pF input capacitance at 25V. The IXFT36N60P increases to 5800 pF, and the APT28F60S to 5575 pF. Higher input capacitance increases gate charge requirements and may reduce maximum switching frequency. Circuit simulation or bench testing is necessary to confirm switching performance in the target application topology.

Q: Are there thermal performance differences between the substitutes?

A: Yes. The IXFT30N60P is rated for 500W maximum power dissipation. The IXFT36N60P provides 650W, offering 30% additional thermal capacity. The APT28F60S provides 520W, a 4% improvement. On-state resistance also differs: IXFT30N60P at 240 mOhm (@ 15A, 10V), IXFT36N60P at 190 mOhm (@ 18A, 10V), and APT28F60S at 220 mOhm (@ 14A, 10V). Lower on-state resistance reduces conduction losses and heat generation.

Q: Can I use the APT28F60S if I need to source from multiple suppliers?

A: Yes. The APT28F60S from Microsemi Corporation provides electrical and mechanical equivalence at the 30A current specification. It maintains identical voltage rating (600V), package type (TO-268 D³Pak), operating temperature range (-55°C to 150°C), and regulatory compliance (ROHS3, REACH Unaffected). Gate charge and input capacitance specifications differ and must be evaluated against gate driver capabilities.

Q: What is the product status of each substitute part?

A: The IXFT30N60P is classified as Obsolete. Both substitute parts are classified as Active: IXFT36N60P (IXYS) and APT28F60S (Microsemi Corporation). Active status ensures continued manufacturing, availability, and technical support from the respective manufacturers.