IXFT30N50Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT30N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 30A continuous drain current. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ series. The IXFT30N50Q is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement.

Substitute parts must maintain electrical compatibility across critical parameters including drain-to-source voltage rating, continuous drain current, gate threshold voltage, and physical package configuration to ensure direct replacement capability in existing circuit designs.

Substiute Parts

IXFT30N50Q

IXYSIn Stock: 772IXFT30N50Q Datasheet

Current PartRFQ

IXTT30N60L2

IXYSIn Stock: 1186IXTT30N60L2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFT30N50Q are identified based on the following electrical and mechanical compatibility criteria:

Primary Compatibility Parameters:

• FET Type: N-Channel topology
• Package / Case: TO-268AA surface mount configuration
• Continuous Drain Current (Id): 30A minimum at 25°C
• Gate Threshold Voltage (Vgs(th)): Matching or compatible threshold characteristics
• Operating Temperature Range: -55°C to 150°C minimum

Voltage Rating Consideration: Substitute parts may have equal or higher drain-to-source voltage ratings (Vdss ≥ 500V). Higher voltage ratings provide design margin and are electrically compatible in applications rated for 500V operation.

On-Resistance and Power Dissipation: Substitute parts with equal or lower on-resistance (Rds On) values and equal or higher power dissipation ratings maintain or improve thermal performance characteristics.

The IXTT30N60L2 meets all primary compatibility criteria and is classified as an active product with current manufacturing status and full compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IXFT30N50Q is classified as obsolete. The IXTT30N60L2 is an active product with current manufacturing support from IXYS, ensuring long-term availability and supply chain continuity.

Compliance and Certifications: The IXTT30N60L2 carries RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements for electronic component procurement. Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Electrical Compatibility: The IXTT30N60L2 provides a higher drain-to-source voltage rating (600V versus 500V), delivering enhanced voltage margin in applications designed for 500V operation. Both devices maintain identical continuous drain current (30A), gate threshold voltage (4.5V), and operating temperature range (-55°C to 150°C).

Thermal Performance: The IXTT30N60L2 offers superior power dissipation capability (540W versus 360W), providing additional thermal headroom. The higher on-resistance value (240mOhm versus 160mOhm) is offset by the increased power dissipation rating and higher voltage classification.

Package Compatibility: Both devices use identical TO-268AA surface mount packaging, enabling direct physical replacement without PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can the IXTT30N60L2 directly replace the IXFT30N50Q in existing designs?

A: Yes. Both devices share identical continuous drain current (30A), gate threshold voltage (4.5V), maximum gate voltage (±20V), operating temperature range (-55°C to 150°C), and TO-268AA package configuration. The IXTT30N60L2 provides higher voltage rating (600V) and power dissipation (540W), making it electrically compatible for applications designed around the IXFT30N50Q specifications.

Q: What is the impact of the higher on-resistance in the IXTT30N60L2?

A: The IXTT30N60L2 has a maximum on-resistance of 240mOhm compared to 160mOhm in the IXFT30N50Q, both measured at 15A and 10V gate voltage. This difference reflects the higher voltage rating (600V versus 500V) and is compensated by the IXTT30N60L2's superior power dissipation rating (540W versus 360W). Circuit thermal analysis should confirm acceptable performance in the specific application.

Q: Are there package or mounting differences between these devices?

A: No. Both the IXFT30N50Q and IXTT30N60L2 use identical TO-268AA surface mount packaging (TO-268-3, D³Pak with 2 leads plus tab). No PCB layout or thermal management modifications are required for physical substitution.

Q: What is the significance of the higher gate charge in the IXTT30N60L2?

A: The IXTT30N60L2 has a maximum gate charge of 335nC compared to 190nC in the IXFT30N50Q, both measured at 10V. Higher gate charge requires longer switching times and increased gate drive energy. Gate driver circuits must be evaluated to confirm adequate drive capability for the substitute device.

Q: Why is the IXFT30N50Q classified as obsolete?

A: The IXFT30N50Q is no longer in active production. The IXTT30N60L2 represents the current active alternative from IXYS, offering improved specifications and compliance certifications suitable for new designs and ongoing production support.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The IXTT30N60L2 carries RoHS3 compliance and REACH unaffected status, meeting current regulatory requirements. Both devices have MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions.

Q: What is the input capacitance difference, and does it affect circuit design?

A: The IXTT30N60L2 has higher input capacitance (10700pF versus 4925pF at 25V). This increased capacitance affects gate drive circuit performance and switching speed. Gate driver circuits should be evaluated to confirm compatibility with the higher capacitive load.