IXFT26N50 Equivalent & Substitute Parts

Part Overview

The IXFT26N50 is an N-Channel 500V MOSFET manufactured by IXYS, rated for 26A continuous drain current at 25°C with 300W maximum power dissipation. The device is housed in a TO-268AA (D³Pak) surface mount package and is part of the HiPerFET™ series. This part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXFT26N50

IXYSIn Stock: 931IXFT26N50 Datasheet

Current PartRFQ

APT30F50S

Microchip TechnologyIn Stock: 948APT30F50S Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT26N50 is determined by strict electrical and mechanical compatibility within the following parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 500V
• FET Type: Must be N-Channel MOSFET
• Package Type: Must be TO-268-3 / D³Pak surface mount configuration
• Operating Temperature Range: Must support -55°C to 150°C (TJ)
• Continuous Drain Current (Id): Must meet or exceed 26A at 25°C

Allowable Variation Parameters:

• Rds On (Max): Lower values are acceptable (improved performance)
• Power Dissipation (Max): Higher values are acceptable (improved thermal capability)
• Gate Charge (Qg): Lower values are acceptable (improved switching characteristics)
• Vgs (Max): Equal or higher ratings are acceptable

The APT30F50S from Microchip Technology meets all critical matching parameters and demonstrates improved electrical characteristics in secondary parameters, making it a direct functional equivalent.

Parameter Comparison

Engineering Selection Recommendations

APT30F50S as Primary Substitute:

The APT30F50S is the recommended equivalent for the obsolete IXFT26N50. Selection is based on the following engineering criteria:

1. Electrical Compatibility: Both devices share identical Vdss (500V) and operating temperature range (-55°C to 150°C). The APT30F50S provides higher continuous drain current (30A vs. 26A), lower on-resistance (190mOhm vs. 200mOhm), and increased power dissipation capability (415W vs. 300W), ensuring full functional compatibility with margin.

2. Package Compatibility: Both devices use the TO-268-3 D³Pak surface mount package, enabling direct PCB footprint compatibility without layout modifications.

3. Regulatory Compliance: Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL 1 rating, satisfying identical environmental and regulatory requirements.

4. Product Status: The APT30F50S is classified as active, ensuring long-term availability and supply chain continuity compared to the obsolete IXFT26N50.

5. Gate Charge Advantage: The APT30F50S exhibits lower gate charge (115nC vs. 160nC), resulting in improved switching performance and reduced driver power requirements.

Frequently Asked Questions (FAQ)

Q: Can the APT30F50S directly replace the IXFT26N50 without circuit modifications?

A: Yes. Both devices share identical Vdss (500V), operating temperature range (-55°C to 150°C), and TO-268-3 D³Pak package configuration. The APT30F50S provides equal or superior electrical performance across all critical parameters, enabling direct substitution without circuit redesign.

Q: What is the significance of the higher continuous drain current rating on the APT30F50S?

A: The APT30F50S is rated for 30A continuous drain current compared to 26A on the IXFT26N50. This higher rating provides design margin and thermal headroom. In applications requiring only 26A, the substitute operates with reduced stress, extending component life and improving reliability.

Q: Are there package compatibility concerns between the IXFT26N50 and APT30F50S?

A: No. Both devices use the TO-268-3 D³Pak surface mount package with identical pinout and footprint. PCB layouts designed for the IXFT26N50 require no modification to accommodate the APT30F50S.

Q: How does the lower gate charge of the APT30F50S affect circuit performance?

A: The APT30F50S exhibits gate charge of 115nC compared to 160nC on the IXFT26N50. Lower gate charge reduces switching time and driver power dissipation, improving overall circuit efficiency and reducing thermal load on gate drive circuitry.

Q: Are regulatory and compliance certifications equivalent between these devices?

A: Yes. Both the IXFT26N50 and APT30F50S maintain ROHS3 compliance, REACH unaffected status, and MSL 1 (unlimited moisture sensitivity) ratings, satisfying identical regulatory and environmental requirements.

Q: What is the practical impact of the on-resistance difference between these devices?

A: The APT30F50S exhibits 190mOhm on-resistance compared to 200mOhm on the IXFT26N50, representing a 5% improvement. This lower on-resistance reduces conduction losses and heat generation during operation, contributing to improved thermal performance and efficiency.

Q: Is the APT30F50S suitable for applications originally designed for the IXFT26N50?

A: Yes. The APT30F50S meets or exceeds all electrical specifications of the IXFT26N50 while maintaining package compatibility. Applications designed for the IXFT26N50 operate within specification using the APT30F50S as a direct substitute.