IXFT20N80Q Equivalent & Substitute Parts

Part Overview

The IXFT20N80Q is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 20A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ series. The product status is listed as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement needs.

Substiute Parts

IXFT20N80Q
IXYSIn Stock: 911IXFT20N80Q Datasheet
IXFT20N80Q
Current Part
APT15F60S
Microsemi CorporationIn Stock: 839APT15F60S Datasheet
APT15F60S
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 20 A (Tc)
Rds On (Max) @ Id, Vgs 420 mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10V
Power Dissipation (Max) 360 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-268AA Surface Mount
FET Type N-Channel

Substitute Part Grouping Explanation

Substitute parts for the IXFT20N80Q are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The main part operates at 800V Vdss. Substitute parts must maintain voltage ratings sufficient for the application. Lower voltage-rated devices may be considered if the application circuit operates below the substitute part's maximum rating.

Current Handling Capability: The IXFT20N80Q carries 20A continuous drain current. Substitute parts with equal or greater current ratings ensure thermal and electrical performance equivalence.

On-State Resistance (Rds On): The 420 mOhm specification at 10A, 10V determines conduction losses. Substitute parts with comparable or lower Rds On values maintain efficiency characteristics.

Gate Charge (Qg): The 200 nC gate charge specification affects switching speed and driver requirements. Substitute parts with similar or lower gate charge ensure compatible gate drive circuits.

Power Dissipation Rating: The 360W maximum power dissipation establishes thermal limits. Substitute parts must support equivalent or greater power handling.

Package and Mounting: The TO-268AA surface mount package defines physical and thermal interface requirements. Substitute parts must use compatible package types.

Temperature Range: The -55°C to 150°C operating range establishes environmental compatibility. Substitute parts must support this range.

Parameter Comparison

Parameter IXFT20N80Q (Main) APT15F60S (Substitute) Unit Notes
Manufacturer IXYS Microsemi Corporation Different manufacturers
FET Type N-Channel N-Channel Matched
Drain to Source Voltage (Vdss) 800 600 V Main part rated higher
Continuous Drain Current (Id) @ 25°C 20 16 A (Tc) Main part rated higher
Rds On (Max) @ Id, Vgs 420 @ 10A, 10V 430 @ 7A, 10V mOhm Comparable; measured at different current
Gate Charge (Qg) (Max) @ Vgs 200 @ 10V 72 @ 10V nC Substitute has lower gate charge
Power Dissipation (Max) 360 290 W (Tc) Main part rated higher
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ) Matched
Package Type TO-268AA D3Pak Compatible surface mount packages
Mounting Type Surface Mount Surface Mount Matched
Vgs (Max) ±20 ±30 V Substitute has higher gate voltage rating
Input Capacitance (Ciss) (Max) @ Vds 5100 @ 25V 2882 @ 25V pF Substitute has lower input capacitance
Product Status Obsolete Active Substitute is currently in production

Engineering Selection Recommendations

Product Status Consideration: The IXFT20N80Q is classified as obsolete, while the APT15F60S is active and in current production. For new designs or long-term procurement, the active status of the APT15F60S provides supply chain continuity.

Compliance and Certifications: The APT15F60S carries RoHS3 compliance and REACH unaffected status, meeting modern regulatory requirements. Both parts are classified under ECCN EAR99 and share the same HTSUS code (8541.29.0095).

Electrical Performance Trade-offs: The APT15F60S operates at a lower voltage rating (600V versus 800V) and lower current rating (16A versus 20A). Selection of this substitute is appropriate only for applications where the circuit voltage remains below 600V and current demand does not exceed 16A. The lower gate charge (72 nC versus 200 nC) and input capacitance (2882 pF versus 5100 pF) of the substitute may improve switching performance and reduce driver power requirements.

Thermal Considerations: The APT15F60S has a lower maximum power dissipation rating (290W versus 360W). Thermal design must account for this reduced capability in high-power applications.

Package Compatibility: Both devices use compatible surface mount packages (TO-268AA and D3Pak are mechanically and thermally equivalent), allowing direct PCB layout substitution.

Frequently Asked Questions (FAQ)

Q: Can the APT15F60S directly replace the IXFT20N80Q in all applications?

A: Direct replacement is limited to applications where the circuit voltage does not exceed 600V and the continuous drain current requirement does not exceed 16A. The lower voltage and current ratings of the APT15F60S restrict its use to lower-stress operating conditions compared to the main part.

Q: What are the implications of the lower gate charge specification in the APT15F60S?

A: The APT15F60S gate charge of 72 nC (versus 200 nC in the IXFT20N80Q) results in faster switching transitions and reduced gate driver power dissipation. Existing gate drive circuits designed for the IXFT20N80Q will operate with improved performance margins when driving the APT15F60S.

Q: Are the TO-268AA and D3Pak packages mechanically interchangeable?

A: Yes. Both packages are surface mount variants of the TO-268 family with identical lead configurations (2 leads plus tab) and thermal interface dimensions, allowing direct PCB substitution without layout modification.

Q: What is the significance of the APT15F60S being an active product versus the IXFT20N80Q being obsolete?

A: Active product status ensures ongoing manufacturing, availability, and technical support from the manufacturer. For procurement planning and new designs, active products provide supply chain reliability and access to current datasheets and application support.

Q: How do the input capacitance differences affect circuit design?

A: The APT15F60S has lower input capacitance (2882 pF versus 5100 pF). This reduces the capacitive load on the gate driver, allowing faster switching transitions and lower driver current requirements. Existing circuits will experience improved switching performance without modification.

Q: What thermal considerations apply when substituting the APT15F60S for the IXFT20N80Q?

A: The APT15F60S has a lower maximum power dissipation rating (290W versus 360W). Thermal analysis must confirm that the application's power dissipation remains within the substitute part's capability. The D3Pak package provides equivalent thermal interface to TO-268AA, so thermal coupling to the PCB and heatsink remains unchanged.

Q: Are there voltage or current derating requirements when using the APT15F60S?

A: The APT15F60S is rated for 600V maximum Vdss and 16A continuous drain current. Applications must operate within these absolute maximum ratings. No derating is required if the circuit operates below these limits; however, applications designed for the full 800V/20A capability of the IXFT20N80Q cannot use the APT15F60S without circuit redesign.

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