IXFT20N80P N-Channel 800V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT20N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage and 20A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ series. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	20	A
Rds On (Max) @ 10A, 10V	520	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5	V
Gate Charge (Qg) @ 10V	86	nC
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-268AA	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXFT20N80P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Requirement: All substitute parts must maintain the 800V Vdss specification to ensure compatibility in high-voltage applications.

Package Compatibility: All substitute parts must use the TO-268AA (D³Pak) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Current Rating Tolerance: Substitute parts may have equal or higher continuous drain current ratings, provided they do not exceed the thermal and electrical design margins of the original application.

Gate Threshold Voltage: All substitute parts must maintain Vgs(th) at or below 5V to ensure gate drive circuit compatibility.

Operating Temperature Range: All substitute parts must support the -55°C to 150°C operating temperature range.

Regulatory Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status.

Based on these criteria, two substitute parts are identified: the IXFT24N80P (manufacturer-recommended substitute from IXYS) and the APT22F80S (similar alternative from Microchip Technology).

Parameter Comparison

Parameter	IXFT20N80P	IXFT24N80P	APT22F80S	Unit
Manufacturer	IXYS	IXYS	Microchip Technology	—
Drain to Source Voltage (Vdss)	800	800	800	V
Continuous Drain Current (Id) @ 25°C	20	24	23	A
Rds On (Max) @ 10V	520 @ 10A	400 @ 12A	430 @ 12A	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5 @ 4mA	5 @ 4mA	5 @ 1mA	V
Gate Charge (Qg) @ 10V	86	105	150	nC
Input Capacitance (Ciss) @ 25V	4685	7200	4595	pF
Power Dissipation (Max)	500	650	625	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-268AA	TO-268AA	D3Pak	—
Product Status	Obsolete	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IXFT24N80P (Manufacturer-Recommended Substitute)

The IXFT24N80P is the primary substitute for the IXFT20N80P. Both devices are manufactured by IXYS and share the same HiPerFET™ series platform. The IXFT24N80P maintains full electrical compatibility with identical voltage ratings, gate threshold voltage, and operating temperature range. The device offers improved performance characteristics with higher continuous drain current (24A versus 20A), lower on-resistance (400mOhm versus 520mOhm), and increased power dissipation capability (650W versus 500W). The IXFT24N80P is currently in active production status, ensuring long-term availability and supply chain stability. This part is ROHS3 compliant and REACH unaffected, meeting all regulatory requirements of the original component.

APT22F80S (Similar Alternative)

The APT22F80S is manufactured by Microchip Technology and represents an alternative substitute option. This device maintains the 800V voltage rating and supports a continuous drain current of 23A, positioning it between the original IXFT20N80P and the IXFT24N80P in terms of current capacity. The APT22F80S features comparable on-resistance (430mOhm) and power dissipation (625W). The package designation is D3Pak, which is mechanically and thermally equivalent to the TO-268AA package used by the original part. The APT22F80S is currently in active production status and maintains full ROHS3 compliance and REACH unaffected status. This part is suitable for applications where multi-source component qualification is required.

Both substitute parts are suitable for direct replacement in applications where the IXFT20N80P is specified, provided that the increased current ratings and improved thermal characteristics do not introduce design complications in the target application.

Frequently Asked Questions (FAQ)

Q: Can the IXFT24N80P be used as a direct replacement for the IXFT20N80P?

A: Yes. The IXFT24N80P maintains identical voltage ratings (800V Vdss), gate threshold voltage (5V @ 4mA), operating temperature range (-55°C to 150°C), and package type (TO-268AA). The higher current rating (24A versus 20A) and improved on-resistance (400mOhm versus 520mOhm) make it a direct functional replacement. Both devices are ROHS3 compliant and REACH unaffected.

Q: What is the difference between the TO-268AA and D3Pak packages?

A: TO-268AA and D3Pak are mechanically and thermally equivalent package designations for the same physical form factor. Both are surface mount packages with two leads plus a tab for thermal dissipation. The APT22F80S uses the D3Pak designation while the IXFT20N80P and IXFT24N80P use TO-268AA, but they are interchangeable from a PCB layout and thermal management perspective.

Q: Why does the IXFT24N80P have higher gate charge than the IXFT20N80P?

A: The IXFT24N80P has a higher gate charge (105nC versus 86nC) due to its higher current rating and improved performance characteristics. This requires slightly more gate drive energy but does not affect compatibility with standard gate drive circuits designed for 10V gate voltage operation.

Q: Is the APT22F80S suitable for high-reliability applications?

A: The APT22F80S is ROHS3 compliant and REACH unaffected, meeting the same regulatory standards as the original IXFT20N80P. It is currently in active production status from Microchip Technology, ensuring consistent quality and availability. Suitability for specific high-reliability applications depends on individual qualification requirements and design specifications.

Q: What is the impact of the higher input capacitance in the IXFT24N80P?

A: The IXFT24N80P has higher input capacitance (7200pF versus 4685pF) compared to the IXFT20N80P. This requires slightly more gate charge energy but does not affect compatibility with standard gate drive circuits. The impact on switching speed is negligible in most applications operating at standard switching frequencies.

Q: Can both substitute parts be used interchangeably in the same design?

A: Both the IXFT24N80P and APT22F80S meet the electrical and mechanical requirements for substitution. However, they are not interchangeable with each other due to differences in gate charge, input capacitance, and manufacturer-specific characteristics. A design should be qualified for one specific substitute part rather than treating them as interchangeable options.

Q: Why is the IXFT20N80P listed as obsolete?

A: The IXFT20N80P is obsolete due to its replacement by the improved IXFT24N80P within the IXYS product line. The IXFT24N80P offers superior performance characteristics while maintaining full backward compatibility, making it the recommended long-term solution for new designs and production continuity.

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