IXFT18N90P N-Channel 900V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT18N90P is an N-Channel MOSFET manufactured by IXYS, rated for 900V drain-to-source voltage with 18A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ Polar series. The IXFT18N90P is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.

Substiute Parts

IXFT18N90P
IXYSIn Stock: 928IXFT18N90P Datasheet
IXFT18N90P
Current Part
IXFT24N90P
IXYSIn Stock: 1396IXFT24N90P Datasheet
IXFT24N90P
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 900 V
Continuous Drain Current (Id) @ 25°C 18 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 600 mOhm @ 500 mA, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 6.5 V @ 1 mA
Power Dissipation (Max) 540 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-268AA Surface Mount
FET Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitute parts for the IXFT18N90P are identified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Electrical Compatibility Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 900V
  • Continuous Drain Current (Id): Must meet or exceed 18A at 25°C
  • Gate Threshold Voltage (Vgs(th)): Must remain within ±30V maximum gate voltage specification
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)
  • FET Technology: N-Channel MOSFET (Metal Oxide)

Mechanical Compatibility Parameters:

  • Package Type: TO-268AA surface mount configuration
  • Mounting Type: Surface mount
  • Lead Configuration: TO-268-3, D³Pak (2 Leads + Tab)

Regulatory & Compliance Parameters:

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected

The IXFT24N90P meets all substitution criteria and is classified as an active product, providing enhanced current handling capability while maintaining voltage and thermal specifications.

Parameter Comparison

Parameter IXFT18N90P (Main Part) IXFT24N90P (Substitute) Unit
Manufacturer IXYS IXYS
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Series HiPerFET™, Polar HiPerFET™, Polar
Drain-to-Source Voltage (Vdss) 900 900 V
Continuous Drain Current (Id) @ 25°C 18 24 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 600 mOhm @ 500 mA, 10V 420 mOhm @ 12A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id 6.5 @ 1 mA 6.5 @ 1 mA V
Gate Charge (Qg) (Max) @ Vgs 97 @ 10V 130 @ 10V nC
Vgs (Max) ±30 ±30 V
Input Capacitance (Ciss) (Max) @ Vds 5230 @ 25V 7200 @ 25V pF
Power Dissipation (Max) 540 660 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package Type TO-268AA TO-268AA
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Obsolete Active

Engineering Selection Recommendations

The IXFT24N90P is the qualified substitute for the obsolete IXFT18N90P. Both devices share identical voltage ratings (900V Vdss), identical gate threshold specifications (6.5V @ 1mA), and identical operating temperature ranges (-55°C to 150°C TJ). Both are housed in the TO-268AA surface mount package with identical lead configurations.

The IXFT24N90P provides enhanced electrical performance characteristics: increased continuous drain current (24A versus 18A), reduced on-state resistance (420 mOhm @ 12A, 10V versus 600 mOhm @ 500mA, 10V), and increased power dissipation capability (660W versus 540W). These improvements ensure the substitute part operates within or below the thermal and electrical stress levels of the original design.

Both parts maintain full compliance with RoHS3, REACH, and MSL 1 (Unlimited) specifications. The IXFT24N90P is classified as an active product, ensuring long-term availability and supply chain continuity. The substitute part is directly compatible with existing PCB layouts and thermal management designs specified for the IXFT18N90P.

Frequently Asked Questions (FAQ)

Q: Can the IXFT24N90P be used as a direct replacement for the IXFT18N90P in existing designs?

A: Yes. Both devices share identical voltage ratings (900V Vdss), identical gate threshold voltage specifications (6.5V @ 1mA), identical operating temperature ranges (-55°C to 150°C TJ), and identical TO-268AA surface mount packaging. The IXFT24N90P provides equal or superior electrical performance across all specified parameters.

Q: What are the key differences between the IXFT18N90P and IXFT24N90P?

A: The primary differences are continuous drain current (24A versus 18A), on-state resistance (420 mOhm @ 12A, 10V versus 600 mOhm @ 500mA, 10V), power dissipation capability (660W versus 540W), gate charge (130 nC @ 10V versus 97 nC @ 10V), and input capacitance (7200 pF @ 25V versus 5230 pF @ 25V). The IXFT24N90P is an active product, while the IXFT18N90P is obsolete.

Q: Are there any package or mounting differences between these parts?

A: No. Both the IXFT18N90P and IXFT24N90P use identical TO-268AA surface mount packaging with TO-268-3 lead configuration (2 Leads + Tab). No PCB layout modifications are required for substitution.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IXFT18N90P and IXFT24N90P are ROHS3 Compliant, REACH Unaffected, and classified as MSL 1 (Unlimited). Both carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Why is the IXFT18N90P classified as obsolete?

A: The IXFT18N90P is no longer in active production. The IXFT24N90P is the active successor product from IXYS, offering enhanced electrical performance while maintaining full compatibility with the original part's voltage, thermal, and package specifications.

Q: What is the impact of increased gate charge in the IXFT24N90P?

A: The IXFT24N90P has a gate charge of 130 nC @ 10V compared to 97 nC @ 10V for the IXFT18N90P. This increase reflects the higher current capability of the substitute part. Gate drive circuits must be capable of supplying the required charge within the specified switching time parameters for the application.

Q: Are there thermal management considerations when substituting the IXFT24N90P?

A: The IXFT24N90P has a higher power dissipation rating (660W versus 540W) and lower on-state resistance, resulting in reduced heat generation at equivalent current levels. Existing thermal management designs for the IXFT18N90P are suitable for the IXFT24N90P without modification.

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