IXFT17N80Q Equivalent & Substitute Parts

Part Overview

The IXFT17N80Q is an N-Channel MOSFET rated for 800V drain-to-source voltage with 17A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is housed in a TO-268AA surface mount package. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	600	mOhm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	95	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	3600	pF @ 25V
Power Dissipation (Max)	400	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-268AA	Surface Mount
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXFT17N80Q is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel configuration
Technology: MOSFET (Metal Oxide)
Package: TO-268AA surface mount
Operating Temperature Range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): Equal to or greater than 800V
Continuous Drain Current (Id): Equal to or greater than 17A at 25°C
Mounting Type: Surface Mount

The IXFT24N90P meets all mandatory compatibility criteria. This substitute maintains the same package footprint, thermal characteristics, and operating temperature range while providing enhanced electrical performance specifications.

Parameter Comparison

Parameter	IXFT17N80Q (Main Part)	IXFT24N90P (Substitute)	Unit
Drain to Source Voltage (Vdss)	800	900	V
Continuous Drain Current (Id) @ 25°C	17	24	A (Tc)
On-State Resistance (Rds On Max)	600 @ 500mA, 10V	420 @ 12A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	4.5 @ 4mA	6.5 @ 1mA	V
Gate Charge (Qg Max) @ Vgs	95 @ 10V	130 @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	3600 @ 25V	7200 @ 25V	pF
Power Dissipation (Max)	400	660	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-268AA	TO-268AA
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Series	HiPerFET™	HiPerFET™, Polar
Mounting Type	Surface Mount	Surface Mount

Engineering Selection Recommendations

The IXFT24N90P is a direct substitute for the IXFT17N80Q based on the following factors:

Product Status Consideration: The IXFT17N80Q is obsolete, while the IXFT24N90P is active. This status difference supports the use of IXFT24N90P for new designs and ongoing production requirements.

Compliance and Certification: The IXFT24N90P carries RoHS3 compliance certification, whereas the IXFT17N80Q does not specify this status. Both parts maintain REACH Unaffected status and EAR99 export classification.

Electrical Performance: The IXFT24N90P provides superior electrical characteristics across all measured parameters. The higher Vdss rating (900V versus 800V), increased continuous drain current (24A versus 17A), and improved power dissipation capability (660W versus 400W) ensure the substitute can handle all applications designed for the original part.

Package and Thermal Compatibility: Both devices use identical TO-268AA surface mount packaging and share the same operating temperature range (-55°C to 150°C TJ), ensuring direct PCB compatibility and thermal performance equivalence.

Frequently Asked Questions (FAQ)

Q: Can the IXFT24N90P be used as a direct replacement for the IXFT17N80Q in existing designs?

A: Yes. The IXFT24N90P maintains identical package geometry (TO-268AA), thermal operating range, and mounting type. The substitute meets or exceeds all electrical specifications of the original part, including voltage rating, current capacity, and power dissipation.

Q: What are the key differences between these two parts?

A: The IXFT24N90P provides higher performance specifications: 900V Vdss (versus 800V), 24A continuous drain current (versus 17A), 660W power dissipation (versus 400W), and lower on-state resistance (420 mOhm versus 600 mOhm). The substitute also carries RoHS3 compliance and is currently in active production status.

Q: Are there any circuit design considerations when switching from IXFT17N80Q to IXFT24N90P?

A: The higher gate charge (130 nC versus 95 nC) and input capacitance (7200 pF versus 3600 pF) of the IXFT24N90P may require gate drive circuit evaluation. The higher gate threshold voltage (6.5V versus 4.5V) should be verified against existing gate drive voltage levels to ensure proper device operation.

Q: Is the IXFT24N90P available in the same packaging format?

A: Yes. Both parts use TO-268AA surface mount packaging with identical pinout and footprint, enabling direct PCB substitution without layout modifications.

Q: What is the moisture sensitivity level for both parts?

A: Both the IXFT17N80Q and IXFT24N90P carry MSL Level 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are both parts classified under the same HTSUS code?

A: Yes. Both parts share HTSUS code 8541.29.0095, confirming their classification as equivalent semiconductor components for tariff and trade purposes.

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