IXFT16N90Q N-Channel 900V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFT16N90Q is an N-Channel MOSFET from IXYS, rated for 900V drain-to-source voltage with 16A continuous drain current at 25°C. This device is housed in a TO-268AA surface mount package and is part of the HiPerFET™ series. The IXFT16N90Q is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	900	V
Current - Continuous Drain (Id) @ 25°C	16	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	650	mOhm @ 8A, 10V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	—

Substitute Part Grouping Explanation

Substitution of the IXFT16N90Q is based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 900V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Drive Voltage: Must support 10V gate drive
Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type: Must be Surface Mount
Package / Case: Must be TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Current Rating Consideration: The IXFT16N90Q operates at 16A continuous drain current. Substitute parts with higher current ratings remain compatible, as they satisfy the electrical requirements while providing additional thermal margin and design flexibility.

The IXFT24N90P meets all substitution criteria and is classified as an active product with current manufacturing support.

Parameter Comparison

Parameter	IXFT16N90Q	IXFT24N90P	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	900	900	V
Current - Continuous Drain (Id) @ 25°C	16	24	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	650 @ 8A, 10V	420 @ 12A, 10V	mOhm
Power Dissipation (Max)	360	660	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	—
Series	HiPerFET™	HiPerFET™, Polar	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

IXFT24N90P as Primary Substitute:

The IXFT24N90P is the qualified substitute for the IXFT16N90Q. Both devices share identical voltage ratings (900V Vdss), identical drive voltage specifications (10V), identical operating temperature range (-55°C to 150°C), and identical package configuration (TO-268AA).

The IXFT24N90P provides enhanced performance characteristics: 24A continuous drain current versus 16A, 660W maximum power dissipation versus 360W, and improved on-resistance (420mOhm at 12A, 10V versus 650mOhm at 8A, 10V). These enhancements ensure compatibility with existing circuit designs while offering superior thermal performance and reduced conduction losses.

The IXFT24N90P holds Active product status with current manufacturing support and is RoHS3 compliant. The IXFT16N90Q is classified as Obsolete, making the IXFT24N90P the appropriate long-term solution for new designs and production continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXFT24N90P directly replace the IXFT16N90Q in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with 900V Vdss ratings, 10V drive voltage specifications, identical operating temperature ranges, and identical TO-268AA package configurations. The IXFT24N90P's higher current rating and power dissipation do not create compatibility issues in circuits designed for the IXFT16N90Q.

Q: What are the key differences between these two devices?

A: The primary differences are current rating (24A versus 16A), power dissipation (660W versus 360W), on-resistance (420mOhm versus 650mOhm), and product status (Active versus Obsolete). The IXFT24N90P also features an extended maximum gate voltage specification (±30V versus ±20V) and higher input capacitance (7200pF versus 4000pF).

Q: Are there any package or pinout differences?

A: No. Both devices use the TO-268-3 D³Pak package with identical pinout and lead configuration. No PCB layout modifications are required for substitution.

Q: What is the impact of the higher on-resistance specification in the IXFT24N90P?

A: The IXFT24N90P exhibits lower on-resistance (420mOhm at 12A, 10V) compared to the IXFT16N90Q (650mOhm at 8A, 10V). Lower on-resistance reduces conduction losses and improves thermal performance, providing a beneficial characteristic for circuit operation.

Q: Is the IXFT24N90P suitable for new product designs?

A: Yes. The IXFT24N90P is classified as Active with current manufacturing support and RoHS3 compliance. It is the appropriate choice for new designs requiring 900V N-Channel MOSFET functionality in the TO-268AA package.

Q: What compliance certifications apply to the IXFT24N90P?

A: The IXFT24N90P is RoHS3 compliant and REACH unaffected. Both devices share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

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