IXFT15N100Q Equivalent & Substitute Parts

Part Overview

The IXFT15N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 15A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is packaged in a TO-268AA surface mount configuration with a maximum power dissipation of 360W. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement needs.

Substiute Parts

IXFT15N100Q

IXYSIn Stock: 796IXFT15N100Q Datasheet

Current PartRFQ

IXFT16N120P

IXYSIn Stock: 860IXFT16N120P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFT15N100Q is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction required
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 1000V rating
• Continuous Drain Current (Id): Substitute must equal or exceed 15A at 25°C
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA configuration required

The IXFT16N120P qualifies as a substitute based on these parameters. It maintains N-Channel MOSFET topology, exceeds the voltage rating (1200V vs. 1000V), meets or exceeds current requirements (16A vs. 15A), operates within the required temperature range, and utilizes the identical TO-268AA package configuration.

Parameter Comparison

Engineering Selection Recommendations

The IXFT16N120P is the qualified substitute for the obsolete IXFT15N100Q based on the following engineering criteria:

Product Status Alignment: The IXFT16N120P maintains active product status with current manufacturing support, addressing the obsolescence of the IXFT15N100Q. This ensures long-term availability and supply chain continuity.

Electrical Performance: The substitute device exceeds the original specifications in voltage rating (1200V vs. 1000V) and current capacity (16A vs. 15A), providing enhanced design margin. The increased power dissipation capability (660W vs. 360W) accommodates thermal requirements in demanding applications.

Compliance and Certifications: Both devices share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and moisture sensitivity level (MSL 1 - Unlimited). The IXFT16N120P includes RoHS3 compliance certification, providing additional regulatory alignment for modern manufacturing environments.

Package Compatibility: Identical TO-268AA surface mount packaging ensures direct mechanical and thermal interface compatibility without PCB redesign or thermal management modifications.

Operating Envelope: Both devices operate across the identical temperature range (-55°C to 150°C TJ), maintaining thermal performance characteristics across all application conditions.

Frequently Asked Questions (FAQ)

Q: Can the IXFT16N120P be used as a direct replacement for the IXFT15N100Q in existing designs?

A: Yes. The IXFT16N120P is mechanically and electrically compatible as a substitute. Both devices utilize the TO-268AA package configuration, identical mounting type, and overlapping operating temperature ranges. The substitute exceeds the original voltage and current ratings, providing enhanced performance margin.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are voltage rating (1200V vs. 1000V), continuous drain current (16A vs. 15A), power dissipation (660W vs. 360W), and on-resistance (950mOhm vs. 700mOhm at 500mA, 10V). The IXFT16N120P also features higher gate charge (120nC vs. 170nC) and input capacitance (6900pF vs. 4500pF), reflecting its higher voltage class design.

Q: Are there any thermal management considerations when substituting these parts?

A: The IXFT16N120P has higher power dissipation capability (660W vs. 360W), which may require thermal interface evaluation in applications operating near the original device's thermal limits. The identical TO-268AA package ensures equivalent thermal coupling to PCB and heatsink interfaces.

Q: Does the IXFT16N120P require different gate drive circuitry?

A: No. Both devices operate with 10V drive voltage for maximum on-resistance specification. The IXFT16N120P accepts higher maximum gate voltage (±30V vs. ±20V), providing additional design flexibility without requiring gate drive circuit modifications.

Q: What is the impact of higher on-resistance in the IXFT16N120P?

A: The IXFT16N120P exhibits higher on-resistance (950mOhm vs. 700mOhm) due to its higher voltage class design. This results in increased conduction losses. Applications sensitive to conduction loss must evaluate thermal impact at the specific operating current and duty cycle of the application.

Q: Are both devices available in the same packaging options?

A: Both devices are supplied in TO-268AA surface mount configuration. The IXFT15N100Q is available in standard packaging, while the IXFT16N120P is supplied in tube packaging. Both maintain identical mechanical and electrical interface specifications for PCB integration.

Q: What compliance certifications apply to the IXFT16N120P?

A: The IXFT16N120P is RoHS3 compliant and maintains REACH Unaffected status. Both devices share EAR99 ECCN classification and MSL 1 (Unlimited) moisture sensitivity rating, ensuring regulatory alignment across manufacturing and distribution environments.